TG2006F Search Results

TG2006F

Contextual Info: TG2006F TOSHIBA GaAs Linear Integrated Circuit GaAs Monolithic TG2006F 1.9 GHz Band Power Amplifier PHS, Digital Cordless Telecommunication Features Positive voltage operation: Vd = 3 V, Vg = 0 or 1 V Low current consumption: It = 130 mA typ. Small package: SM8 package (2.9 x 2.8 × 1.1mm)

TG2006F

Contextual Info: TOSHIBA TENTATIVE TG2006F TOSHIBA GaAs LINEAR INTEGRATED CIRCUIT GaAs MONOLITHIC TG2006F 1.9GHz POWER AMP FEATURES • VDD = 3V, lDD = 130mA Typ. • PQ = 21dBmW (Min), Gp = 22dB (Typ.) • Single voltage supply MAXIMUM RATINGS (Ta = 25°C) SYMBOL CHARACTERISTIC

Contextual Info: TO SH IBA TG2006F TOSHIBA GaAs LINEAR INTEGRATED CIRCUIT GaAs MONOLITHIC TG2006F 1.9 GHz BAND POWER AMPLIFIER PHS, DIGITAL CORDLESS TELECOMMUNICATION FEATURES • Positive Voltage Operation : = 3 V, Vg = 0 or 1 V • Low Current Consumption : It = 130 mA Typ.

Contextual Info: T O SH IB A TG2006F TOSHIBA GaAs LINEAR INTEGRATED CIRCUIT GaAs MONOLITHIC TG2006F 1.9GHz BAND POWER AMPLIFIER PHSf DIGITAL CORDLESS TELECOMMUNICATION FEATURES • Positive Voltage Operation Vd = 3V, Vg = 0 to 3V • Low Current Consumption lt= 130mA Typ.

TG2006F

Contextual Info: TG2006F TOSHIBA GaAs Linear Integrated Circuit GaAs Monolithic TG2006F 1.9 GHz Band Power Amplifier PHS, Digital Cordless Telecommunication Features Positive voltage operation: Vd = 3 V, Vg = 0 or 1 V Low current consumption: It = 130 mA typ. Small package: SM8 package (2.9 x 2.8 × 1.1mm)

Contextual Info: TOSHIBA TG2006F TOSHIBA GaAs LINEAR INTEGRATED CIRCUIT GaAs MONOLITHIC TG2006F 1.9GHz BAND POWER AMPLIFIER PHS, DIGITAL CORDLESS TELECOMMUNICATION FEATURES • Positive Voltage Operation : Vd = 3V, V g = 0 to 3V • Low Current Consumption : It = 130mA Typ.

Contextual Info: TO SHIBA TG2006F TOSHIBA GaAs LINEAR INTEGRATED CIRCUIT GaAs MONOLITHIC 2 QQ6 F T G 1.9GHz BAND POWER AMPLIFIER PHS, DIGITAL CORDLESS TELECOMMUNICATION FEATURES • Positive Voltage Operation Vd = 3V, V g = 0 to 3V • Low Current Consumption It = 130mA Typ.

Contextual Info: TO SH IBA TG2006F TOSHIBA GaAs LINEAR INTEGRATED CIRCUIT GaAs MONOLITHIC TG2006F 1.9 GHz BAND POWER AMPLIFIER PHS, DIGITAL CORDLESS TELECOMMUNICATION FEATURES • Positive Voltage Operation : = 3 V, Vg = 0 or 1 V • Low Current Consumption : It = 130 mA Typ.

TG20

Abstract: TG2006F
Contextual Info: TG2006F TOSHIBA GaAs Linear Integrated Circuit GaAs Monolithic TG2006F 1.9 GHz Band Power Amplifier PHS, Digital Cordless Telecommunication Features l Positive voltage operation: Vd = 3 V, Vg = 0 or 1 V l Low current consumption: It = 130 mA typ. l Small package: SM8 package (2.9 x 2.8 × 1.1mm)

KAD7001

Abstract: SBX1610-52 sony SBX1610-52 LA2785 UPC177C ST L7805CV NJM79L05A SBX1810-52 sbx1610 MC34063P1
Contextual Info: 12/11/02 NJR Corporation Cross Reference Guide Sorted by Part Number Winter 2003 Competing Part Number AD66761 AN1311 AN1311S AN1319 AN1319S AN1339 AN1339NS AN1393 AN1393NS AN1432 AN1458 AN1458S AN311 AN311S AN6572 AN7810 AN78L06 AN78L08 AN78L09 AN78L18 AN78L20

sony SBX1610-52

Abstract: SBX1610-52 PCF8544 msm58371 SFH5110-38 equivalent M50925 M62446 L7808CV equivalent SHARP HD44780 PIC-12043TE2
Contextual Info: Summer 2001 Part Number New! New! New! New! New! New! New! New! New! New! AD66761 AN1311 AN1311S AN1319 AN1319S AN1339 AN1339NS AN1393 AN1393NS AN1432 AN1458 AN1458S AN311 AN311S AN6572 AN7810 TO-220 AN78L06 AN78L08 AN78L09 AN78L18 AN78L20 AN78L24 AN78M10

KAD7001

Abstract: SBX1610-52 LA2785 MC1723CP equivalent lm723cn M62477 L7805CV equivalent M50727 M34510M4 sbx1610 UPC177C
Contextual Info: NJR Corporation 12/12/00 Cross Reference Guide Sorted By Part Number Part Number AN1311 AN1311S AN1319 AN1319S AN1339 AN1339NS AN1393 AN1393NS AN311 AN311S AN7810 TO-220 AN78L06 AN78L08 AN78L09 AN78L18 AN78L20 AN78L24 AN78M10 AN78M18 AN78M20 AN7924 AN79L05

TOSHIBA RF Power Module S-AV24

Abstract: diode varicap BB 112 varicap v147 2SC386A 2SK1310 3SK78 2sc5066 V101 varicap diode 1SV149 2SK192
Contextual Info: 高周波用半導体デバイス ダイオード編 ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製

3SK73

Abstract: S-AV24 3SK121 3SK114 TOSHIBA RF Power Module S-AV24 3SK101 S-AU82VL diode varicap BB 112 2SC2328 3SK112
Contextual Info: 高周波用半導体デバイス パワーデバイス編 ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製

BB 505 Varicap Diode

Abstract: s-av24 V101 varicap diode varicap v101 varicap v147 varicap v103 replacement for 2sc5088 horizontal transistors TOSHIBA S-AV29H Zener c9v 3SK114
Contextual Info: Radio-Frequency Semiconductors Diodes Semiconductor Company The information contained herein is subject to change without notice. 021023_D TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent

FET K161

Abstract: S-AV24 k192a Transistor C1923 C1923 transistor k161 jfet fet k241 k161 mosfet C1923 transistor base c2498 TRANSISTOR
Contextual Info: Radio-Frequency Semiconductors Transistors, FETs, Cell Packs Semiconductor Company The information contained herein is subject to change without notice. The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or

FET K161

Abstract: Transistor C2216 Transistor k161 k161 jfet k192a Transistor C2668 fet k241 k161 mosfet Transistor C2347 Transistor C1923
Contextual Info: 高周波用半導体デバイス トランジスタ・FET・セルパック編 ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製

2sc5088 horizontal transistors

Abstract: S-AV36 2SK192 mosfet data 3SK121 equivalent S-AV32 3SK121 fet 2SC2879 CB LINEAR CIRCUIT replacement for 2sc5088 horizontal transistors 3SK73 equivalent transistor 2sc2509
Contextual Info: High-Frequency Semiconductors Power Devices Semiconductor Company The information contained herein is subject to change without notice. 021023_D The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or

2SK3075 equivalent

Abstract: 10 ghz transistor 2SK3078 MT3S04T 2SC5066 MT6P03AE MT6P06E 3SK320 24lu1 transistor 2SC5066
Contextual Info: High-Frequency Devices for Mobile Communications PRODUCT GUIDE 800 MHz Band Analog and Digital Cellular High-Frequency Block Diagram Ant. RF Amp Mixer RX IF detection Prescaler VCO 1 900 MHz Buff Amp Buff Amp OSC (1) Tuning DUP Prescaler Buff Amp VCO (2) 100 MHz