21D0 Search Results

Contextual Info: TMS44100, TMS44100P 4194304-BIT DYNAMIC RANDOM-ACCESS MEMORY SMHS410F-SEPTEMBER 1989-REVISED DECEMBER 1992 Single 5-V Power Supply ±10% Tolerance Performance Ranges: ACCESS ACCESS ACCESS SD P AC K A G E t (TOP VIEW) DJ P A C K A G E t (TOP VIEW) Organization . . . 4194 304 x 1

TMS44C256

Abstract: TMS44C256-10 TMS44C256-80 44C256
Contextual Info: TMS44C256 262 144-WORD BY 4-BIT DYNAMIC RANDOM-ACCESS MEMORY ‘jM G S l'M C D Q1 I u 1 DQ4 W ; 3 18 ' D Q 3 V SS DQ2 I 7 RAS ! 9 R E AD 13 j A 6 12 j A5 TIM E T IM E TIM E OR ta R ta (C ) 'a (C A ) W R IT E A3 [ 9 (tC A A ) CYCLE (M A X ) (M A X ) (M IN)

Contextual Info: TMS416160, TMS416160P 1 048 576-WORD BY 16-BIT HIGH-SPEED DYNAMIC RANDOM-ACCESS MEMORIES SMKS660-DECEMBER 1992 Organization. . . 1 048 576 x 16 RE P A C K A G E t DC P A C K AG E t TOP VIEW (TOP VIEW) Single 5-V Supply (10% Tolerance) '416160/P-60 '416160/P-70

SMJ416400

Abstract: 21D0 416400
Contextual Info: SMJ416400 4194304 BY 4-BIT DYNAMIC RANDOM-ACCESS MEMORY SGMS042E – MARCH 1992 – REVISED MARCH 1996 D D D D D D D D D D Organization . . . 4 194 304 x 4 Single 5-V Power Supply 10% Tolerance Performance Ranges: ’416400 - 70 ’416400 - 80 ’416400 -10

TMS44101

Contextual Info: TMS44101 4194 304-BIT DYNAMIC RANDOM-ACCESS MEMORY REV A — SMHS411 — JA N U A R Y 1991 Organization . . . 4 194 304 x DC w C RAS C 1 1 ^ 2 3 Z 4 NC A 10 C 5 Single 5-V Power Supply ±10% Tolerance Performance Ranges: A0 C 9 A1 C 10 A2 C 11 READ ACCESS ACCESS ACCESS

TS-2321

Contextual Info: SMJ44400 1 048 576-WORD BY 4-BIT DYNAMIC RANDOM-ACCESS MEMORY SGMS041D - JANUARY 1991 - REVISED JUNE 1995 Processed to MIL-STD-883, Class B Organization. . . 1 048 576 x 4 Single 5-V Power Supply ±10% Tolerance Performance Ranges: A CCESS ACCESS A CCESS

TMS417409A

Contextual Info: TMS416409A, TMS417409A TMS426409A, TMS427409A 4194304-WORD BY 4-BIT HIGH-SPEED DRAMS SMKS893B - AUGUST 1996 - REVISED APRIL 1997 I I I I I This data sheet is applicable to a ll TMS41x409As and TMS42x409As symbolized by Revision “B ”, Revision “E ”, and subsequent

Nokia 3210

Abstract: nokia c5-03 str z 4267 G4ad7 4-20 mA converter modbus rs485 ascii protocols G4D32RS G4ODC5 nokia display c5-03 CRC16
Contextual Info: MISTIC PROTOCOL USER’S GUIDE Form 270-100823 — August, 2010 43044 Business Park Drive, Temecula, CA 92590-3614 Phone: 800-321-OPTO 6786 or 951-695-3000 Fax: 800-832-OPTO (6786) or 951-695-2712 www.opto22.com Product Support Services: 800-TEK-OPTO (835-6786) or 951-695-3080

Contextual Info: Features Datasheet RX64M Group Renesas MCUs R01DS0173EJ0100 Rev.1.00 Jul 31, 2014 120-MHz 32-bit RX MCU, on-chip FPU, 240 DMIPS, up to 4-MB flash memory, 512-KB SRAM, various communications interfaces including IEEE 1588-compliant Ethernet MAC, full-speed USB 2.0 with battery charging, SD host interface optional , quad SPI, and CAN, 12-bit A/D

JS28F512M29

Abstract: js28f256m29 js28f256 JS28F512 pc28f00am29ew JS28F00AM29EW pc28f00am29 js28f00 PC28F00AM29EWHA JS28F256M29EWL
Contextual Info: Numonyx Axcell™ M29EW Datasheet 256-Mbit, 512-Mbit, 1-Gbit, 2-Gbit x8/x16, uniform block 3 V supply flash memory Features „ „ „ „ „ „ „ Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers

Contextual Info: TMS45160, TMS45160P 262ā144ĆWORD BY 16ĆBIT HIGHĆSPEED DYNAMIC RANDOMĆACCESS MEMORIES SMHS160D − AUGUST 1992 − REVISED JUNE 1995 D D D DZ PACKAGE TOP VIEW This data sheet is applicable to all TMS45160/Ps symbolized with Revision “D” and subsequent

Contextual Info: TMS417809A, TMS427809A, TMS427809AP 2097152 BY 8-BIT EXTENDED DATA OUT DYNAMIC RANDOM-ACCESS MEMORIES SMKS894B – AUGUST 1996 – REVISED NOVEMBER 1997 D D D D D D D D D This data sheet is applicable to all TMS417809As and TMS427809A/Ps symbolized by Revision “E” and subsequent

g23 SMD Transistor

Abstract: smd marking JD SMJ44400
Contextual Info: DRAM SMJ44400 Austin Semiconductor, Inc. 1M x 4 DRAM PIN ASSIGNMENT Top View DYNAMIC RANDOM-ACCESS MEMORY 20-Pin DIP (JD) 20-Pin Flatpack (HR) (400 MIL) AVAILABLE AS MILITARY SPECIFICATIONS • SMD 5962-90847 • MIL-STD-883 DQ1 DQ2 W\ RAS\ A9 A0 A1 A2 A3

TMS417409A

Abstract: TMS416409A TMS426409A TMS427409A 21D9
Contextual Info: TMS416409A, TMS417409A, TMS426409A, TMS427409A 4194304 BY 4-BIT EXTENDED DATA OUT DYNAMIC RANDOM-ACCESS MEMORIES SMKS893B – AUGUST 1996 – REVISED APRIL 1997 D D D D D D D D D DJ/DGA PACKAGES TOP VIEW This data sheet is applicable to all TMS41x409As and TMS42x409As symbolized

TMS416169

Abstract: TMS418169
Contextual Info: TMS416169, TMS418169 1048576-WORD BY 16-BIT EXTENDED DATA OUT HIGH-SPEED DRAMS SMKS886C – MAY1995 – REVISED MARCH 1996 D D D D D D D D D D Organization . . . 1 048 576 Words by 16 Bits Single 5-V Power Supply Performance Ranges: ACCESS ACCESS ACCESS READ OR

Contextual Info: TMS417800A 2097152 BY 8-BIT DYNAMIC RANDOM-ACCESS MEMORY SMKS888B – AUGUST 1996 – REVISED SEPTEMBER 1997 D D D D D D D D D This data sheet is applicable to all TMS417800As symbolized by Revision “E” and subsequent revisions as described in the device symbolization section.

TMS416800

Abstract: TMS417800 20D17 20d19
Contextual Info: TMS416800, TMS417800 2097152-WORD BY 8-BIT HIGH-SPEED DRAMS SMKS883A – OCTOBER 1995 – REVISED MARCH 1996 D D D D D D D D Organization . . . 2 097 152 x 8 Single 5 V Power Supply ±10% Tolerance Performance Ranges: ’41x800-60 ’41x800-70 ’41x800-80

SMHS562C

Abstract: R-PDSO-G20 Package pwr TMS44400 TMS44400P TMS46400 TMS46400P 4X400
Contextual Info: TMS44400, TMS44400P, TMS46400, TMS46400P 1048576-WORD BY 4-BIT DYNAMIC RANDOM-ACCESS MEMORIES SMHS562C – MAY 1995 – REVISED NOVEMBER 1996 D D D D D D D D Organization . . . 1 048 576 x 4 Single 5-V Power Supply for TMS44400 / P ± 10% Tolerance Single 3.3-V Power Supply for TMS46400 / P

Contextual Info: SMJ416100 16777216-BIT DYNAMIC RANDOM-ACCESS MEMORY _ SGMS045C - NOVEMBER 1992 - REVISED JUNE 1995 Organization . . . 16777216 x 1 Bits Single 5-V Power Supply 10% Tolerance Performance Ranges: '416100-70 •416100-80 '416100-10 ACCESS TIME ACCESS

TMS44400-12

Abstract: CI 576 TMS44400 TMS44400-10 TMS44400-80
Contextual Info: TMS44400 1,048,576-WORD BY 4-BIT DYNAMIC RANDOM-ACCESS MEMORY OCTOBER 1989 Organization . . . 1,048,576 x 4 OM PACKAGE * TOP VIEW Single 5-V Power Supply (±10% Tolerance) Performance Ranges: ACCESS ACCESS ACCESS TIME TIME (W c ) (MAX) READ TIME OR WRITE

7be0

Contextual Info: Numonyx Axcell™ M29EW Datasheet 256-Mbit, 512-Mbit, 1-Gbit, 2-Gbit x8/x16, uniform block 3 V supply flash memory Features „ „ „ „ „ „ „ Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers

Contextual Info: SMJ416100 16777216-BIT DYNAMIC RANDOM-ACCESS MEMORY SGMS045E – NOVEMBER 1992 – REVISED MARCH 1996 D D D D D D D D D D Organization . . . 16 777 216 x 1 Bit Single 5-V Power Supply 10% Tolerance Performance Ranges: ’416100-70 ’416100-80 ’416100-10

R-PDSO-G44 Package

Abstract: TMS416160 TMS416160P TMS418160 TMS418160P TMS426160 TMS426160P TMS428160 TMS428160P
Contextual Info: TMS416160, TMS416160P, TMS418160, TMS418160P TMS426160, TMS426160P, TMS428160, TMS428160P 1048576-WORD BY 16-BIT HIGH-SPEED DRAMS SMKS160C – MAY 1995 – REVISED NOVEMBER 1995 D D D D D D D D D D Organization . . . 1 048 576 x 16 Single Power Supply 5 V or 3.3 V

RTL 2832

Abstract: BCM 2836 CNC DRIVES ARM9 instruction set flowchart of bluetooth technology toshiba Bluetooth Module csr ARM920T CP15 MC9328MX1 philips 432 cnc
Contextual Info: Reference Manual Document Number: MC9328MX1RM Rev. 6.1 06/2007 Because of an order from the United States International Trade Commission, BGA-packaged product lines and part numbers indicated here currently are not available from Freescale for import or sale in the United States prior to September 2010: i.MX1 Product Family