TMS416800 Search Results

TMS416800

Abstract: TMS417800 20D17 20d19
Contextual Info: TMS416800, TMS417800 2097152-WORD BY 8-BIT HIGH-SPEED DRAMS SMKS883A – OCTOBER 1995 – REVISED MARCH 1996 D D D D D D D D Organization . . . 2 097 152 x 8 Single 5 V Power Supply ±10% Tolerance Performance Ranges: ’41x800-60 ’41x800-70 ’41x800-80

21D8

Contextual Info: TMS416800, TMS416800P 2 097152 WORD BY 8-BIT DYNAMIC RANDOM-ACCESS MEMORIES S M K S 6 8 0 -D E C E M B E R 1 9 9 2 Performance Ranges: ACCESS ACCESS ACCESS READ TIME TIME TIME OR WRITE <‘ RAC MAX) («CAC) (MAX) (*AA) (MAX) 15 ns 30 ns CYCLE (MIN) '416800/P-60

Contextual Info: TMS416800A, TMS417800A TMS426800A, TMS426800AP, TMS427800A, TMS427800AP 2 097152-WORD BY 8-BIT HIGH-SPEED DRAMS S M K S 8 8 8 A - AU GU ST 1 9 9 6 -R E V IS E D MAY 1997 This data sheet is applicable to all TMS41x800As and TMS42x800A/Ps symbol­ ized by Revision “E" and subsequent revisions

VG264265B

Abstract: TC5117405CSJ hyundai cross reference guide TC51V16160 Micron 4MX32 EDO SIMM dram cross reference cross reference tc5117800cft SAMSUNG Cross Reference
Contextual Info: Cross Reference Guide 1.3. Cross Reference Guide 1.3.1. Cross Reference of 256kxl6 DRAM Vendors\Configuration VIS Hitachi Hyundai Micron Motorola NEC Samsung Toshiba TI 256kxl6, 5V, EDO VG264265B HM514265D HY514264B MT4C16270 N/A PD4244265LE KM416C254D TC5144265D

Contextual Info: TM S 41 6800 , TM S 41 7 8 0 0 2 0 9 7 1 5 2 - W O R D B Y 8- B I T H I G H - S P E E D D R A M S S M K S883A-O C TO BER 1995 - REVISED MARCH 1996 Or ga n i za t i o n . . . 2 0 9 7 1 52 x 8 DZ P A C K A G E TOP V IE W S i ngl e S V P o w e r S up p l y ( ± 1 0 % T ol er a n c e )