20D19 Search Results

Contextual Info: SMJ416160, SMJ418160 1048576-WORD BY 16-BIT HIGH-SPEED DRAM 1 SGMS720A - APRIL 1995 - REVISED JUNE 1995 XXX PACKAGE TOP VIEW ACCESS ACCESS ACCESS TIME TIME TIME '41x160-60 41x160-70 '41x160-80 • • • • • • • • tRAC MAX 60 ns 70 ns SO n* *CAC

Ks-7b

Contextual Info: TMS417800, TMS417800P 2 097152 WORD BY 8-BIT DYNAMIC RANDOM-ACCESS MEMORIES S M K S 7 8 0 -D E C E M B E R 1992 x 8 DE P AC K A G E t DZ P A C K AG E t TOP VIEW (TOP VIEW) * Performance Ranges: vcc[ 1o D Q 0[ 2 ACCESS ACCESS ACCESS READ TIME TIME TIME OR WRITE

5C100B-25

Abstract: 5C1008-25 20D14 5C100B
Contextual Info: SMJ5C1008 128K BY 8-BIT STATIC RANDOM-ACCESS MEMORY _ SQMS734A - MAY 1996 - REVISED JUNE 1997 Processed to MIL-PRF-38535 Organization . . . 128K Words x 8 Bits Fast Static Operation Single 5-V Supply ±10% Tolerance Maximum Access Time From Address or

TMS44410

Abstract: TMS44410-70
Contextual Info: TMS44410 1 048 576-WORD BY 4-BIT WRITE-PER-BIT DYNAMIC RANDOM-ACCESS MEMORY REV A - • Organization . . . 1 048 576 x 4 SMHS441 JANUARY 1991 DM and DJ Packaget Top View • Single 5-V Power Supply (±10% Tolerance) • Performance Ranges: ACCESS ACCESS ACCESS

Contextual Info: TMS416160, TMS416160P 1 048 576-WORD BY 16-BIT HIGH-SPEED DYNAMIC RANDOM-ACCESS MEMORIES SMKS660-DECEMBER 1992 Organization. . . 1 048 576 x 16 RE P A C K A G E t DC P A C K AG E t TOP VIEW (TOP VIEW) Single 5-V Supply (10% Tolerance) '416160/P-60 '416160/P-70

TS-2321

Contextual Info: SMJ44400 1 048 576-WORD BY 4-BIT DYNAMIC RANDOM-ACCESS MEMORY SGMS041D - JANUARY 1991 - REVISED JUNE 1995 Processed to MIL-STD-883, Class B Organization. . . 1 048 576 x 4 Single 5-V Power Supply ±10% Tolerance Performance Ranges: A CCESS ACCESS A CCESS

TMS417409A

Contextual Info: TMS416409A, TMS417409A TMS426409A, TMS427409A 4194304-WORD BY 4-BIT HIGH-SPEED DRAMS SMKS893B - AUGUST 1996 - REVISED APRIL 1997 I I I I I This data sheet is applicable to a ll TMS41x409As and TMS42x409As symbolized by Revision “B ”, Revision “E ”, and subsequent

TMS 1070 HL

Contextual Info: T M S 4 1 6 1 6 9 A, T M S 4 1 8 1 6 9 A T M S 4 2 6 1 6 9 A , TMS 4 26 1 69 A P, T M S 4 2 8 1 6 9 A , T M S 4 2 8 1 6 9 A P 1 0 4 8 5 7 6 - W O R D BY 1 6- BI T E X T E N D E D DATA O U T H I G H - S P E E D D R A M S S M K S 892-A U G U S T 1996 TIME TIME

S891C

Abstract: SS828
Contextual Info: TMS418160A 1048576 BY 16-BIT DYNAMIC RANDOM-ACCESS MEMORY S M K S891C -A U G U S T 1996-R E V IS E D OCTOBER 1997 This data sheet is applicable to TMS418160As symbolized by Revision “E ” and subsequent revisions as described in the device symbolization section.

wf vqc 10 d a6

Contextual Info: I • I I I ! • • • • _ TMS417800A 2097152 BY 8-BIT DYNAMIC RANDOM-ACCESS MEMORY SMKS688B - AUGUST 1996 - REVISED SEPTEMBER 1997 This data sheet is applicable to a ll TMS417800As symbolized by Revision “E” and subsequent revisions as described in the

Contextual Info: TMS417809A, TMS427809A, TMS427809AP 2097152 BY 8-BIT EXTENDED DATA OUT DYNAMIC RANDOM-ACCESS MEMORIES SMKS894B – AUGUST 1996 – REVISED NOVEMBER 1997 D D D D D D D D D This data sheet is applicable to all TMS417809As and TMS427809A/Ps symbolized by Revision “E” and subsequent

g23 SMD Transistor

Abstract: smd marking JD SMJ44400
Contextual Info: DRAM SMJ44400 Austin Semiconductor, Inc. 1M x 4 DRAM PIN ASSIGNMENT Top View DYNAMIC RANDOM-ACCESS MEMORY 20-Pin DIP (JD) 20-Pin Flatpack (HR) (400 MIL) AVAILABLE AS MILITARY SPECIFICATIONS • SMD 5962-90847 • MIL-STD-883 DQ1 DQ2 W\ RAS\ A9 A0 A1 A2 A3

TMS417409A

Abstract: TMS416409A TMS426409A TMS427409A 21D9
Contextual Info: TMS416409A, TMS417409A, TMS426409A, TMS427409A 4194304 BY 4-BIT EXTENDED DATA OUT DYNAMIC RANDOM-ACCESS MEMORIES SMKS893B – AUGUST 1996 – REVISED APRIL 1997 D D D D D D D D D DJ/DGA PACKAGES TOP VIEW This data sheet is applicable to all TMS41x409As and TMS42x409As symbolized

SMKS894

Abstract: PDSO-G28 Package TMS417809A TMS427809A TMS427809AP
Contextual Info: TMS417809A, TMS427809A, TMS427809AP 2097152 BY 8-BIT EXTENDED DATA OUT DYNAMIC RANDOM-ACCESS MEMORIES SMKS894B – AUGUST 1996 – REVISED NOVEMBER 1997 D D D D D D D D D This data sheet is applicable to all TMS417809As and TMS427809A/Ps symbolized by Revision “E” and subsequent

Contextual Info: TMS417800A 2097152 BY 8-BIT DYNAMIC RANDOM-ACCESS MEMORY SMKS888B – AUGUST 1996 – REVISED SEPTEMBER 1997 D D D D D D D D D This data sheet is applicable to all TMS417800As symbolized by Revision “E” and subsequent revisions as described in the device symbolization section.

TMS416800

Abstract: TMS417800 20D17 20d19
Contextual Info: TMS416800, TMS417800 2097152-WORD BY 8-BIT HIGH-SPEED DRAMS SMKS883A – OCTOBER 1995 – REVISED MARCH 1996 D D D D D D D D Organization . . . 2 097 152 x 8 Single 5 V Power Supply ±10% Tolerance Performance Ranges: ’41x800-60 ’41x800-70 ’41x800-80

SMHS562C

Abstract: R-PDSO-G20 Package pwr TMS44400 TMS44400P TMS46400 TMS46400P 4X400
Contextual Info: TMS44400, TMS44400P, TMS46400, TMS46400P 1048576-WORD BY 4-BIT DYNAMIC RANDOM-ACCESS MEMORIES SMHS562C – MAY 1995 – REVISED NOVEMBER 1996 D D D D D D D D Organization . . . 1 048 576 x 4 Single 5-V Power Supply for TMS44400 / P ± 10% Tolerance Single 3.3-V Power Supply for TMS46400 / P

R-PDSO-G44 Package

Abstract: TMS416160 TMS416160P TMS418160 TMS418160P TMS426160 TMS426160P TMS428160 TMS428160P
Contextual Info: TMS416160, TMS416160P, TMS418160, TMS418160P TMS426160, TMS426160P, TMS428160, TMS428160P 1048576-WORD BY 16-BIT HIGH-SPEED DRAMS SMKS160C – MAY 1995 – REVISED NOVEMBER 1995 D D D D D D D D D D Organization . . . 1 048 576 x 16 Single Power Supply 5 V or 3.3 V

SMJ44400

Contextual Info: SMJ44400 1 048 576-WORD BY 4-BIT DYNAMIC RANDOM-ACCESS MEMORY SGMS041D – JANUARY 1991 – REVISED JUNE 1995 D D D D D D D D D D D D D Processed to MIL-STD-883, Class B Organization . . . 1 048 576 x 4 Single 5-V Power Supply ±10% Tolerance Performance Ranges:

SMJ4C1024

Abstract: 4c1024 SMJ44C256 4C1024-15 4c10248
Contextual Info: SMJ4C1024 1048576 BY 1-BIT DYNAMIC RANDOM-ACCESS MEMORY SGMS023E – DECEMBER 1988 – REVISED MARCH 1996 D D D D D D D D D D D D D Organization . . . 1 048 576 x 1-Bit Processed to MIL-STD-883, Class B Single 5-V Supply 10% Tolerance Performance Ranges:

Contextual Info: TMS464169, TMS464169P, TMS465169, TMS465169P 4194304 BY 16-BIT EXTENDED DATA OUT DYNAMIC RANDOM-ACCESS MEMORIES SMHSS66A -JUNE 1997- REVISED • Organization . . . 4194304 by 16 Bits • Single 3.3-V Power Supply ± 0.3 V Tolerance • Performance Ranges:

Contextual Info: TMS46400, TMS46400P 1 048 576-WORD BY 4-BIT LOW-VOLTAGE DYNAMIC RANDOM-ACCESS MEMORIES SMHS464-JANUARY 1993 SD PACKAGEt TOP VIEW DJ PACKAGEt (TOP VIEW) Single 3.3-V Power Supply (±0.3-V Tolerance) DQ1 C Low Power Dissipation (TMS46400P) - 200 mA CMOS Standby

SMKS891

Abstract: DQ8001
Contextual Info: TMS418160A 1048576 BY 16-BIT DYNAMIC RANDOM-ACCESS MEMORY _ SMKS891C- AUGUST 1996 - REVISED OCTOBER 1997 This data sheet is applicable to TMS418160As symbolized by Revision “E” and subsequent revisions as described in the device symbolization section,

Contextual Info: SMJ416160, SMJ418160 1048576 BY 16-BIT DYNAMIC RANDOM-AGCESS MEMORIES _ SQ M S7200- APRH. 1.89».-. REVISED SEPTEMBER 1997 Organization . . . 1048576 by 16 Bits Single 5-V Power Supply ±10% Tolerance Performance Ranges: ACCESS ACCESS ACCESS TIME