20D17 Search Results

Contextual Info: SMJ416160, SMJ418160 1048576-WORD BY 16-BIT HIGH-SPEED DRAM 1 SGMS720A - APRIL 1995 - REVISED JUNE 1995 XXX PACKAGE TOP VIEW ACCESS ACCESS ACCESS TIME TIME TIME '41x160-60 41x160-70 '41x160-80 • • • • • • • • tRAC MAX 60 ns 70 ns SO n* *CAC

5C100B-25

Abstract: 5C1008-25 20D14 5C100B
Contextual Info: SMJ5C1008 128K BY 8-BIT STATIC RANDOM-ACCESS MEMORY _ SQMS734A - MAY 1996 - REVISED JUNE 1997 Processed to MIL-PRF-38535 Organization . . . 128K Words x 8 Bits Fast Static Operation Single 5-V Supply ±10% Tolerance Maximum Access Time From Address or

TMS44C256

Abstract: TMS44C256-10 TMS44C256-80 44C256
Contextual Info: TMS44C256 262 144-WORD BY 4-BIT DYNAMIC RANDOM-ACCESS MEMORY ‘jM G S l'M C D Q1 I u 1 DQ4 W ; 3 18 ' D Q 3 V SS DQ2 I 7 RAS ! 9 R E AD 13 j A 6 12 j A5 TIM E T IM E TIM E OR ta R ta (C ) 'a (C A ) W R IT E A3 [ 9 (tC A A ) CYCLE (M A X ) (M A X ) (M IN)

Contextual Info: TMS416160, TMS416160P 1 048 576-WORD BY 16-BIT HIGH-SPEED DYNAMIC RANDOM-ACCESS MEMORIES SMKS660-DECEMBER 1992 Organization. . . 1 048 576 x 16 RE P A C K A G E t DC P A C K AG E t TOP VIEW (TOP VIEW) Single 5-V Supply (10% Tolerance) '416160/P-60 '416160/P-70

Contextual Info: TEXAS INSTRUMENTS INC 4DE » • 0Tbl721 □DÖG4:lb Ö ■ Till SMJ44C256 262,144-WORD BY 4-BIT DYNAMIC RANDOM-ACCESS MEMORY 'T - y ie 'Z - b - i s • 2 6 2 ,1 4 4 x 4 Organization • Single 5-V Supply 10% Tolerance • Performances Ranges: SM J44C256-10

TMS 1070 HL

Contextual Info: T M S 4 1 6 1 6 9 A, T M S 4 1 8 1 6 9 A T M S 4 2 6 1 6 9 A , TMS 4 26 1 69 A P, T M S 4 2 8 1 6 9 A , T M S 4 2 8 1 6 9 A P 1 0 4 8 5 7 6 - W O R D BY 1 6- BI T E X T E N D E D DATA O U T H I G H - S P E E D D R A M S S M K S 892-A U G U S T 1996 TIME TIME

Contextual Info: TMS45160, TMS45160P 262ā144ĆWORD BY 16ĆBIT HIGHĆSPEED DYNAMIC RANDOMĆACCESS MEMORIES SMHS160D − AUGUST 1992 − REVISED JUNE 1995 D D D DZ PACKAGE TOP VIEW This data sheet is applicable to all TMS45160/Ps symbolized with Revision “D” and subsequent

TMS416169

Abstract: TMS418169
Contextual Info: TMS416169, TMS418169 1048576-WORD BY 16-BIT EXTENDED DATA OUT HIGH-SPEED DRAMS SMKS886C – MAY1995 – REVISED MARCH 1996 D D D D D D D D D D Organization . . . 1 048 576 Words by 16 Bits Single 5-V Power Supply Performance Ranges: ACCESS ACCESS ACCESS READ OR

TMS416800

Abstract: TMS417800 20D17 20d19
Contextual Info: TMS416800, TMS417800 2097152-WORD BY 8-BIT HIGH-SPEED DRAMS SMKS883A – OCTOBER 1995 – REVISED MARCH 1996 D D D D D D D D Organization . . . 2 097 152 x 8 Single 5 V Power Supply ±10% Tolerance Performance Ranges: ’41x800-60 ’41x800-70 ’41x800-80

TMS44400-12

Abstract: CI 576 TMS44400 TMS44400-10 TMS44400-80
Contextual Info: TMS44400 1,048,576-WORD BY 4-BIT DYNAMIC RANDOM-ACCESS MEMORY OCTOBER 1989 Organization . . . 1,048,576 x 4 OM PACKAGE * TOP VIEW Single 5-V Power Supply (±10% Tolerance) Performance Ranges: ACCESS ACCESS ACCESS TIME TIME (W c ) (MAX) READ TIME OR WRITE

R-PDSO-G44 Package

Abstract: TMS416160 TMS416160P TMS418160 TMS418160P TMS426160 TMS426160P TMS428160 TMS428160P
Contextual Info: TMS416160, TMS416160P, TMS418160, TMS418160P TMS426160, TMS426160P, TMS428160, TMS428160P 1048576-WORD BY 16-BIT HIGH-SPEED DRAMS SMKS160C – MAY 1995 – REVISED NOVEMBER 1995 D D D D D D D D D D Organization . . . 1 048 576 x 16 Single Power Supply 5 V or 3.3 V

SMJ44C256

Abstract: 44C256 44c25680 SMJ44C256-10 SMJ44C256-12 SMJ44C256-15 SMJ44C256-80 44C256-80 44c256-12 44C256-10
Contextual Info: SMJ44C256 262144 BY 4-BIT DYNAMIC RANDOM-ACCESS MEMORY SGMS034C – MAY 1989 – REVISED JUNE 1995 D D D D D D D D D D Organization . . . 262 144 Words x 4 Bits Single 5-V Supply 10% Tolerance Processed to MIL-STD-833, Class B Performance Ranges: SMJ44C256-80

Contextual Info: ADVANCE INFORMATION TM4256GP8, TM4256GV8 262,144 BY 8-BIT DYNAMIC RAM MODULES OCTOBER 1985 - R EV ISED NOVEMBER 1985 2 6 2 ,1 4 4 X 8 Organization V SINGLE-IN-LINE PACKAGE T ITOP VIEW Single 5-V Supply 1 0 % Tolerance) 30-Pin Single-in-Line Package (SIP)

Contextual Info: SMJ416160, SMJ418160 1048576 BY 16-BIT DYNAMIC RANDOM-AGCESS MEMORIES _ SQ M S7200- APRH. 1.89».-. REVISED SEPTEMBER 1997 Organization . . . 1048576 by 16 Bits Single 5-V Power Supply ±10% Tolerance Performance Ranges: ACCESS ACCESS ACCESS TIME

TMS44C256

Abstract: TMS44C256-10 bojf tms44c251
Contextual Info: • a ^ L lT S S Q O T b 'n ? Q ■ TMS44C256, TMS44C257 262,144-WORD BY 4-BIT DYNAMIC RANDOM-ACCESS MEMORIES INSTR 2 SE ASIC/MEMORY N PACKAGE (TOP VIEW) 262,144 x 4 Organization Single 5-V Supply (10% Tolerance) DQlC 1 Ü 20 ]Vss DQ2[ 2 193 004 wC 3 18 ]DQ3

21D8

Contextual Info: TMS416800, TMS416800P 2 097152 WORD BY 8-BIT DYNAMIC RANDOM-ACCESS MEMORIES S M K S 6 8 0 -D E C E M B E R 1 9 9 2 Performance Ranges: ACCESS ACCESS ACCESS READ TIME TIME TIME OR WRITE <‘ RAC MAX) («CAC) (MAX) (*AA) (MAX) 15 ns 30 ns CYCLE (MIN) '416800/P-60

TMS45160

Abstract: TMS45160P
Contextual Info: TMS45160, TMS45160P 262144-WORD BY 16-BIT HIGH-SPEED DYNAMIC RANDOM-ACCESS MEMORIES SMHS160D – AUGUST 1992 – REVISED JUNE 1995 D D D D D D D D D D D D D This data sheet is applicable to all TMS45160/Ps symbolized with Revision “D” and subsequent revisions as described on page 21.

Contextual Info: SMJ5C1008 1 2 8 K - W O R D BY 8-BI T STATIC R A N D O M - A C C E S S M E M O R Y S G M S 734- MAY 1996 JDC PACKAGE TOP VIEW P r o c e s s e d to M I L - S T D - 8 8 3 , Cl ass B Or ga n i za t i o n . . . 1 28K W o r d s x 8 Bits F as t Static Operat i on

Contextual Info: KEMET Part Number: T491B156M010AT7280 Capacitor, tantalum, 15 uF, 3528, +/-20% Tol, 10V@85C General Information Manufacturer: KEMET Electrical Specifications Capacitance: 10V Voltage DC @ 105C: 8.5V Voltage DC @ 125C: 7V Tolerance: Application: Temperature Range:

SMHS165B-OCTOBER

Contextual Info: bEE D • TEXAS B1bl7ES INSTR 0GÖG063 =100 A S I C / M E M O R Y ITI I S TMS45165, TMS45165P 2 62 144-WORD BY 16-BIT HIGH-SPEED DYNAMIC RANDOM-ACCESS MEMORIES _ SMHS165B-OCTOBER 1992-RE VISED DECEMBER 1992 Organization . . . 262 144 x 16 Single 5-V Supply (±10% Tolerance)

5C1008-20

Abstract: 20D17 20D13 SMJ5C1008 20D25 IB 27C 20D10 5C1008 20D20 5C1008-25
Contextual Info: SMJ5C1008 128K-WORD BY 8-BIT STATIC RANDOM-ACCESS MEMORY _ Processed to MIL-STD-883, Class B Organization . . . 128K Words Fast Static Operation x SG M S734-M A Y 199 JDC PACKAGE TOP VIEW 8 Bits NC[ 1 A16[ 2 Single 5-V Supply (±10% Tolerance)

s720c

Contextual Info: S M J 4 1 6160 , S M J 4 1 8 1 6 0 1 0 4 8 5 7 6 - W O R D BY 16-BIT HIG H -S P E E D D R A M S S G M S 720C - APRIL 1 9 9 5 -REVISED FEBRUARY 1996 HK D P A C K A G E Or ga n i za t i o n . . . 1 0 4 8 5 7 6 x 1 6 TOP VIE W S i ngl e 5-V P o w e r S u p p l y ( ± 1 0 % T ol er a n c e )

s8015

Contextual Info: SMJ44C256 2 62 144-WORD BY 4-BIT DYNAMIC RANDOM-ACCESS MEMORY SGMS034A-MAY 1989-flEVISED FEBRUARY 1993 3-State Unlatched Output * - 55°C to 125°C Operating Free-Air Temperature Range Low Power Dissipation * Processed to MIL-STD-833, Class B Texas Instruments EPIC CMOS Process

TMS44C256

Abstract: tms44
Contextual Info: TMS44C256 262 144-WORD BY 4-BIT DYNAMIC RANDOM-ACCESS MEMORY SMGS256C x DQ1 [ 1 Single 5-V Supply 10% Tolerance T M S 44 C 256 -60 T M S 44 C 256 -70 T M S 44 C 256 -80 T M S 44 C 256 -10 TM S 44 C 256 -12 T IM E ACCESS READ T IM E OR ta(R ) ‘ •(C) <a(CA)