211 SILICONIX Search Results

Siliconix AN104

Abstract: AN104 J210 J211 J212
Contextual Info: J210/211/212 Siliconix NĆChannel JFETs Product Summary Part Number VGS off (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) J210 -1 to -3 -25 4 2 J211 -2.5 to -4.5 -25 6 7 J212 -4 to -6 -25 7 15 J211, For applications information see AN104, page 21. Features

IRFF210

Abstract: IRFF211 IRFF212
Contextual Info: löE D SILICONIX INC • ÖSS473S QOmflQl 0 ■ IRFF210/211/212/213 f T ’Silfco n ix JJm in c o rp o ra te d N-Channel Enhancement Mode Transistors "T-IA -07 TO-2Q5AF BOTTOM VIEW PRODUCT SUMMARY PART NUMBER V BR DSS 'W •d (A) IRFF210 200 1.5 2.2 IRFF211

SI2301DS* equivalent

Abstract: AP-211 CMPWR025 CMPWR100 CMPWR150 FDN338P Si2301DS toshiba MOTHERBOARD CIRCUIT diagram ACPI CIRCUIT DIAGRAM "network interface cards"
Contextual Info: AP-211 CALIFORNIA MICRO DEVICES Instantly Available PCI Card Power Management Introduction Today, PCs need to remain constantly connected to the outside world, but at the same time consume minimum power. Even when looking “idle”, it is still possible to receive a message

H12-200

Abstract: h1-5051 HI-5046 RC4531
Contextual Info: PA R T N U M BER M AN UFAC TURER Raytheon Signetics Silicon General Siliconix H A R R IS E Q U IV A L E N T RM/RC1556A HA-2600/2605 RM/RC4131 HA-2600/2605 RM/RC4132 HA-2700/2705 RM/RC4531 HA-2500/2505 RM/RC4558 HA-2650/2655 111/211/311 HA-2111/2211/2311 1488

harris 201

Abstract: H12-200-2 rc4558 H1200 HA-2650 Signetics 2605 HI-5051 dg506 HI5043 DG507
Contextual Info: PART NUMBER M ANUFACTURER Raytheon Signetics Silicon General Siliconix H A R R IS E Q U IV A L E N T RM /R C1556A HA-2600/2605 RM/RC4131 HA-2600/2605 RM /RC4132 HA-2700/2705 RM/RC4531 H A-2500/2505 RM /RC4558 HA-2650/2655 111/211/311 H A -2 1 11/2211/2311

Siliconix Dual N-Channel JFETs

Abstract: J210 211 siliconix
Contextual Info: Tem ic J210/211/212 Siliconix N-Channel JFETs Product Summary P a rt N um ber Vg s oK (V) V(BR)GSS ^ ' ,l ^ ; gfcM in (m S) 'I I dss Mi (mA) J210 - 1 to - 3 -25 4 2 J211 -2.5 to -4.5 -2 5 6 7 J212 —4 to - 6 -2 5 7 15 J211, For applications information seeAN104, page 12-21.

transistor j210

Abstract: J210 Siliconix JFETs Dual Siliconix N-Channel JFETs AN104 J211 J212
Contextual Info: J210/211/212 N-Channel JFETs Product Summary Part Number VGS off (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) J210 –1 to –3 –25 4 2 J211 –2.5 to –4.5 –25 6 7 J212 –4 to –6 –25 7 15 J211, For applications information see AN104, page 1.

K212 jfet

Abstract: K212-18 Siliconix Dual N-Channel JFETs 2N5911-12 2N5912CHP K211-18 U257 U257CHP U312 U312CHP
Contextual Info: I Cl n-channel JFETs designed fo r d s S . Silicon ix Performance Curves NZF See Section 5 • G en eral Purpose A m plifiers B EN EFITS I • High Gain G ps = 7000 ¿imho Minimum K 211-18, K212-18 High Input Impedance I q SS = 100 pA Maximum c iss = 5 pF Typical

1488 1489 standard

Abstract: Li-116 HA-2700 teledyne philbrick 1430 ca3130 replacement ma702 MC1554 HARRIS / HA1 LM 1436 MPC16S
Contextual Info: CROSSREFERENCE Linear and Interface Devices PART NUM BER MANUFACTURER Advanced Micro Devices Analog Devices Burr Brown Datel Exar H A R R IS E Q U IV A L E N T N O T ES A M 1 11/211/3111 HA-2111/2211/2311 A1 A M 118/318 HA-2510/2515 B2 AM 715 HA-2520/2525

1488 1489 standard

Abstract: MC1533 MC1554 ma702 AD7513 MPC16S Exar cross HA2-2055 CMP-01 Solitron Devices
Contextual Info: CROSSREFERENCE Linear and Interface Devices PART NUM BER MANUFACTURER Advanced Micro Devices Analog Devices Burr Brown Datel Exar H A R R IS E Q U IV A L E N T N O T ES A M 1 11/211/3111 HA-2111/2211/2311 A1 A M 118/318 HA-2510/2515 B2 AM 715 HA-2520/2525

SILICONIX SD21

Abstract: ST211 sst211 sot-143 SST211 SD 214DE siliconix SST213 213D to253 SST215 SILICONIX CD+Laser+pickup+kss+213D
Contextual Info: T e m ic SD211DE/SST211 Series Siliconix N-Channel Lateral DMOS FETs SD211DE SD213DE SD215DE SST211 SST213 SST215 Product Summary P a rt N u m b er V br DS M in (V) VGS(th) M ax (V) «•DS(on) M ax (Q ) e « « M a x (p F ) toN M a x (n s) SD211DE 30 1.5

AN301

Abstract: SD211 SD211DE SD213DE SD214 SD215DE SST211 SST213 SST215 SST215 SILICONIX
Contextual Info: SD211DE/SST211 Series Siliconix NĆChannel Lateral DMOS FETs SD211DE SD213DE SD215DE Product Summary Part Number V BR DS Min (V) SST211 SST213 SST215 VGS(th) Max (V) rDS(on) Max (W) Crss Max (pF) tON Max (ns) SD211DE 30 1.5 45 @ VGS = 10 V 0.5 2 SD213DE 10

DG211

Abstract: ADG211A ADG212A DG21 DG212 tcn-90 a24v
Contextual Info: - 322 D G 2 1 1, 2 1 2 S P S T CM O S 7 t c ^ • X'f {vn y k oo^) • S S ilic o n ix * pdp « m m « DG211 it « Siliconix AD « DG212 A D G 211A A D G 212A N JTJ2I1 fiQÄ j ( V + = 15V, G N D = 0 , T„ = 25"C) DG211/212 l£ % iP'l Æ & # ftÄ ^/liVylLfXT

Si5403DC

Contextual Info: SPICE Device Model Si5403DC Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range

74383

Abstract: 15-V
Contextual Info: SPICE Device Model SUM36N20-54P Vishay Siliconix N-Channel 200-V D-S 150°C MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

74219

Abstract: SiE812DF 74219+ram
Contextual Info: SPICE Device Model SiE812DF Vishay Siliconix N-Channel 40-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

SiE848DF-T1-E3

Abstract: SiE848DF-T1-GE3 SIE848 68821
Contextual Info: New Product SiE848DF Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Gen III Power MOSFET • Ultra Low Thermal Resistance Using TopExposed PolarPAK® Package for DoubleSided Cooling

Si2309CDS

Contextual Info: SPICE Device Model Si2309CDS Vishay Siliconix P-Channel 60-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

15-V

Abstract: 74383
Contextual Info: SPICE Device Model SUM36N20-54P Vishay Siliconix N-Channel 200-V D-S 150°C MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

a1718

Contextual Info: SPICE Device Model Si5403DC Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range

74219

Abstract: SiE812DF
Contextual Info: SPICE Device Model SiE812DF Vishay Siliconix N-Channel 40-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

74350

Abstract: 15-V SUP36N20-54P SUP36N20
Contextual Info: SPICE Device Model SUP36N20-54P Vishay Siliconix N-Channel 200-V D-S 150°C MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Contextual Info: New Product SiE848DF Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Gen III Power MOSFET • Ultra Low Thermal Resistance Using TopExposed PolarPAK® Package for DoubleSided Cooling

Contextual Info: SÌ6463DQ Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY V o s <VJ Rd S<ON| (3 ) >d (A) 0.020 @ VGS = -4 .5 V ±6.5 0.030 @ VGS = -2.5 V ±5.2 e 't'V ' A -20 s* Q TSSOP-8 O il Source Pins 2, 3 ,6 and 7 must be tied common. It Top View Ô D P-Channel MOSFET