FDN338P Search Results

FDN338P

Abstract: SOIC-16 FDN338P T R
Contextual Info: March 1998 FAIRCHILD ì m ic o n d u c t o r FDN338P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features SuperSOT™-3 P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's

FDN338P

Abstract: 187M
Contextual Info: FDN338P P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications. • –2.4 A, –20 V.

Contextual Info: March 1998 F/\IRCHII_ID M ICDNDUCTO R tm FDN338P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features SuperSOT -3 P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's

Contextual Info: FDN338P P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications. • –1.6 A, –20 V. RDS ON = 115 mΩ @ V GS = –4.5 V

FDN338P

Abstract: SOIC-16
Contextual Info: December 1997 PRELIMINARY FDN338P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features SuperSOTTM-3 P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very

Contextual Info: FDN338P 20V P-Channel Enhancement Mode MOSFET VDS= -20V RDS ON , Vgs@-4.5V, Ids@-1.6A= 115m Ω RDS(ON), Vgs@-2.5V, Ids@-1.3A= 155mΩ Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Package Dimensions D G SOT-23(PACKAGE)

Contextual Info: March 1998 FDN338P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features TM SuperSOT -3 P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very

iss-400 diode

Abstract: FDN338P SOIC-16
Contextual Info: March 1998 FDN338P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features TM SuperSOT -3 P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very

Contextual Info: ^ ¡ 2 s e m ic £ S ü n d u ! t E S tS June 1997 r a d v a n c e in f o r m a t i o n FDN338P P-ChannelLogic Level Enhancement Mode Field Effect Transistor G eneral Description Features SuperSOT™ -3 P-Channel logic level enhancem ent mode pow er field effect transistors are produced using F a irc h ild 's

FDN338P T R

Contextual Info: FDN338P P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications. • –1.6 A, –20 V. RDS ON = 115 mΩ @ V GS = –4.5 V

Contextual Info: March 1998 F A I R C H I L D SEM ICONDUCTO R T M FDN338P P-Channel Logic Level Enhancement Mode Field Effect Transistor G eneral D escription Features SuperS Q T -3 P -C hannel logic level en hancem ent m ode po w e r field effe ct transistors are produced using Fairchild's

FDN338P

Contextual Info: FDN338P P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications. • –1.6 A, –20 V. RDS ON = 115 mΩ @ V GS = –4.5 V

FDN338P

Abstract: marking code 10 sot23 CBVK741B019 F63TNR MMSZ5221B on SEMICONDUCTOR MARKING FDN338P T R
Contextual Info: FDN338P P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications. • –1.6 A, –20 V. RDS ON = 115 mΩ @ V GS = –4.5 V

9n90c

Abstract: 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS
Contextual Info: Power MOS -FET Selection Guide MOS-FET 2007. 2007. First First Version Version Http://www.kec.co.kr KEC-H Corp. Product classification First & Best First & Best MOSFET MOSFET SS-MOSFET MOSFET Trench TrenchMOSFET MOSFET Planar PlanarMOSFET MOSFET Pw Pw<<1W

OV7690 vga camera module

Abstract: OV7690 software application note XILINX ft2232 usb jtag OV7690 K350QVG-V1-F VGA ov7690 S29GL064N90TFI04 S29GL064N90TFI XILINX ft2232 schematic diagram of ip camera
Contextual Info: Stellaris LM3S9B96 Development Kit User ’s Manual DK-LM3S9B96 -05 Co pyrigh t 2 009– 201 0 Te xas In strumen ts Copyright Copyright © 2009–2010 Texas Instruments, Inc. All rights reserved. Stellaris and StellarisWare are registered trademarks of Texas Instruments.

5401 DM smd transistor

Abstract: 5401 DM 5401 DM transistor High Speed CAN Transceiver IC Philips Siliconix Handbook ISP1123 ISP1123BD ISP1123D ISP1123NB LQFP32
Contextual Info: ISP1123 Universal Serial Bus compound hub Rev. 01 — 5 October 1999 Preliminary specification 1. General description The ISP1123 is a compound Universal Serial Bus USB hub device which complies with USB Specification Rev. 1.1. It integrates a Serial Interface Engine (SIE), hub

dell motherboard schematic

Abstract: c2383 equivalent pinout dell battery LA-1221 D3014 C5440 C3679 equivalent c840 dell boe bot schematic diagram SK c3679
Contextual Info: A B C D REV VRM CLOCK CK-408 NORTHWOOD PAGE_36,39,40,41 PAGE_3 1 BATTERY A CONNECTOR VCORE CK-TITAN (56 pin TSSOP) PAGE_37 PAGE_36 478 pin +5VSUS PAGE_6 +3.3VALW +5VALW +12V +5VRUN 11/15/02 PAGE_20 PAGE_20 AC97 MODEM CONNECTOR PAGE_22 I2S DOCK INTERFACE

6JK3

Abstract: BC733 bc735 usb common mode choke BC380 BC628 MMDR BC148 pin configuration BC702 Wistron Corporation
Contextual Info: A B C D E D H2 BLOCK DIAGRAMVER.-4 Project Code 4 4,5 3 ICS 94239 M/B D/D LAUNCH CDROM IR 2ND HDD DESKTOP CPU For ENG Willamette For M/P Northwood CLK GEN 6 0.18u 1.3G~1.8G G768D 0.13u 2.0G~2.4G 500mA; 600mA 15 7,8 9,10,11 3 2002/06/06 DDR*2 MCH 15 ATI P6

fet B20 p03

Abstract: u7620 DCD-1530 BC148 pin configuration wistron docking foxconn WISTRON power sequence FW82807A Wistron Corporation SC 3062
Contextual Info: ÌÓíêð Ð ±¶»½¬ ½±¼»æ çïòìëÍðïòððï ÐÝÞ ÐñÒæìèòìëÍðïòÈÈÈ ÎÛÊxÍ×ÑÒæ óï Ó±¾•´» ÝÐË Ôîæ ÙÒÜ Ì«¿´¿¬·² ÝÔÕÙÛÒò ×Ó× Ýçèîé í ÷ Ôíæ Í·¹²¿´ î øÝÔÕ ÝÎÌ ÝÑÒÒ

LPC47N250

Abstract: max1532 PR317 SiI1362 Maxim MAX1908 alviso-GM U15i Socket AM2 1u040 docking cradle smsc
Contextual Info: A B C D E 1 1 Compal confidential 2 2 Schematics Document Mobile Dothan uFCBGA/uFCPGA with Intel Alviso_GM+ICH6-M core logic 2004-09-09 3 3 REV:06 4 4 Title Compal Electronics, Inc. Cover Sheet THIS SHEET OF ENGINEERING DRAWING IS THE PROPRIETARY PROPERTY OF COMPAL ELECTRONICS, INC. AND CONTAINSSize

xd card reader

Abstract: SC22P50V2JN-4GP SCD1U10V2KX-4GP SCD1U10V2KX FDN338P-NL-GP AAT4250IGV-T1-GP 36P1 I0044 C9-R21 SDcd
Contextual Info: 4 3 2 PCB P/N REVISION +3VRUN_CARD CARD READER :07517 : SB 2 +3VRUN_CARD 2 C3 SCD1U10V2KX-4GP 1 C4 SCD1U10V2KX-4GP 2 1 +3VRUN_CARD D U1 1 1 5 C5 SC2D2U6D3V3MX-1-GP D CARD1 3D3V_S0 +3VRUN_CARD 5 DY AAT4250IGV-T1-GP DY 2 74.04250.A3F 2 C6 SC1U6D3V2ZY-GP CARD_EN

sil1364

Abstract: PZ4782K am4825p ITE8512F fds8884 G784P81U IT8305E G545B1P8U Inventec M11D Santa Rosa
Contextual Info: 5 4 3 2 1 D D Inventec Corporation R&D Division C C Board name : Mother Board Schematic Project : M11D Santa Rosa Version : 0.1 Initial Date : March 22 , 2007 B B A A Inventec Corporation <OrgAddr4> Inventec Buliding,66 Hou-Kang Stree Shin-Lin District, Taipei 111, Taiwan

SN0608098

Abstract: schematic lcd inverter dell BQ70a EMC4002 LA-4041P B30 C350 mec5035 ECE5028 5 pin vga camera pinout suyin sn060809
Contextual Info: A B C D E COMPAL CONFIDENTIAL 1 MODEL NAME : JAL20 PCB NO : LA-4041P DA800009Y1L BOM NO : 43153231L01(TPM) 43153231L02 (Non TPM) 1 M09 Maybach UMA uFCPGA Mobile Penryn Intel Cantiga GM + ICH9M 2 2 2008-06-16 REV : 1.0(A00) @ : Nopop Component 3@ : disable TPM

78u30

Abstract: oz9981 temic 0675 c9 temic 0675 d4 BC555 oz9983 oz99 temic 0675 d6 BC148 pin configuration foxconn
Contextual Info: Jan. 11 2002 C-Note 2 Block Diagram Mobile CPU 3 HOST BUS LCD 13 CH70011 Almador-M 133MHz 10 12 To P.R. 7,8,9 MIC IN AC'97 CODEC HUB I/F . X I 66MHz AD1881A 24 PCI BUS Line Out OP AMP CARDBUS PWR SW TI 1410A TPS2211A AC-Link O C 11 DVO BUS / 66MHz GMCH Final version