2SA1725
Abstract: 2SC4511 FM20 2sa1725 transistor
Contextual Info: 2SA1725 Silicon PNP Epitaxial Planar Transistor Complement to type 2SC4511 V 50min∗ VCE=–4V, IC=–2A IB –3 A VCE(sat) IC=–2A, IB=–0.2A –0.5max V PC 30(Tc=25°C) W fT VCE=–12V, IE=0.5A 20typ MHz 150 °C COB VCB=–10V, f=1MHz 150typ pF °C
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2SA1725
2SC4511)
10max
80min
50min
20typ
150typ
100ms
2SA1725
2SC4511
FM20
2sa1725 transistor
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PDF
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2SC4466
Abstract: 2SA1693
Contextual Info: 2SC4466 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SA1693 IEBO VEBO 6 V V(BR)CEO IC 6 A hFE µA VEB=6V 10max µA V IC=50mA 80min VCE=4V, IC=2A 50min∗ a A VCE(sat) IC=2A, IB=0.2A 1.5max V 60(Tc=25°C) W fT VCE=12V, IE=–0.5A 20typ
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2SC4466
2SA1693)
10max
80min
50min
20typ
110typ
to100)
to140)
2SC4466
2SA1693
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PDF
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2SA1908
Abstract: 2SC5100 DSA0016505
Contextual Info: 2SA1908 Silicon PNP Epitaxial Planar Transistor Complement to type 2SC5100 –10max µA V IEBO VEB=–6V –10max µA –6 V V(BR)CEO –8 A hFE –120min 50min∗ V –3 A IC=–3A, IB=–0.3A –0.5max V PC 75(Tc=25°C) W fT VCE=–12V, IE=0.5A 20typ MHz
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2SA1908
2SC5100)
FM100
10max
120min
50min
20typ
300typ
2SA1908
2SC5100
DSA0016505
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PDF
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2SA1725
Abstract: 2SC4511 FM20 DSA0016504
Contextual Info: 2SA1725 Silicon PNP Epitaxial Planar Transistor Complement to type 2SC4511 V 50min∗ VCE=–4V, IC=–2A IB –3 A VCE(sat) IC=–2A, IB=–0.2A –0.5max V PC 30(Tc=25°C) W fT VCE=–12V, IE=0.5A 20typ MHz 150 °C COB VCB=–10V, f=1MHz 150typ pF °C
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2SA1725
2SC4511)
10max
80min
50min
20typ
150typ
100ms
2SA1725
2SC4511
FM20
DSA0016504
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PDF
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2SC4468
Abstract: 2SA1695 DSA0016510
Contextual Info: 2SC4468 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SA1695 10max µA V IEBO VEB=6V 10max µA V V(BR)CEO 10 A hFE 140min IC=50mA V 50min∗ VCE=4V, IC=3A A VCE(sat) IC=5A, IB=0.5A 0.5max V 100(Tc=25°C) W fT VCE=12V, IE=–0.5A 20typ
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2SC4468
2SA1695)
MT-100
10max
140min
50min
20typ
250typ
to100)
2SC4468
2SA1695
DSA0016510
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PDF
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2SC5099
Abstract: 2SA1907 DSA0016511
Contextual Info: 2SC5099 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SA1907 V IEBO VEB=6V 10max µA 6 V V(BR)CEO IC=50mA 80min V 6 A hFE VCE=4V, IC=2A 50min∗ IB 3 A VCE(sat) IC=2A, IB=0.2A 0.5max V PC 60(Tc=25°C) W fT VCE=12V, IE=–0.5A 20typ MHz
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2SC5099
2SA1907)
FM100
10max
80min
50min
20typ
110typ
2SC5099
2SA1907
DSA0016511
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PDF
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2SC4511
Abstract: TRANSISTOR C-111 2SA1725 FM20 DSA0016510
Contextual Info: 2SC4511 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SA1725 V(BR)CEO IC 6 A hFE VEB=6V 10max µA IC=25mA 80min V VCE=4V, IC=2A 50min∗ 10.1±0.2 3 A VCE(sat) IC=2A, IB=0.2A 0.5max V PC 30(Tc=25°C) W fT VCE=12V, IE=–0.5A 20typ MHz
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2SC4511
2SA1725)
10max
80min
50min
20typ
110typ
to100)
to140)
2SC4511
TRANSISTOR C-111
2SA1725
FM20
DSA0016510
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PDF
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2SA1907
Abstract: 2SC5099
Contextual Info: 2SA1907 Silicon PNP Epitaxial Planar Transistor Complement to type 2SC5099 –10max µA –6 V V(BR)CEO IC=–50mA –80min V –6 A hFE –3 A VCE(sat) IC=–12A, IB=–0.2A –0.5max V PC 60(Tc=25°C) W fT VCE=–12V, IE=0.5A 20typ MHz 150 °C COB VCB=–10V, f=1MHz
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2SA1907
2SC5099)
10max
80min
50min
20typ
150typ
18typ
10typ
21typ
2SA1907
2SC5099
|
PDF
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2SA1907
Abstract: 2SC5099
Contextual Info: 2SC5099 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SA1907 µA V IEBO VEB=6V 10max µA 6 V V(BR)CEO IC=50mA 80min V 6 A hFE VCE=4V, IC=2A 50min∗ IB 3 A VCE(sat) IC=2A, IB=0.2A 0.5max V PC 60(Tc=25°C) W fT VCE=12V, IE=–0.5A 20typ
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2SC5099
2SA1907)
FM100
10max
80min
50min
20typ
2SA1907
2SC5099
|
PDF
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2SA1908
Abstract: 2SC5100
Contextual Info: 2SA1908 Silicon PNP Epitaxial Planar Transistor Complement to type 2SC5100 –10max µA V IEBO VEB=–6V –10max µA –6 V V(BR)CEO –8 A hFE –120min 50min∗ V –3 A IC=–3A, IB=–0.3A –0.5max V PC 75(Tc=25°C) W fT VCE=–12V, IE=0.5A 20typ MHz
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2SA1908
2SC5100)
FM100
10max
120min
50min
20typ
300typ
2SA1908
2SC5100
|
PDF
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2SC4466
Abstract: 2sa1693
Contextual Info: 2SC4466 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SA1693 IEBO VEBO 6 V V(BR)CEO IC 6 A hFE µA VEB=6V 10max µA V IC=50mA 80min VCE=4V, IC=2A 50min∗ a A VCE(sat) IC=2A, IB=0.2A 1.5max V 60(Tc=25°C) W fT VCE=12V, IE=–0.5A 20typ
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Original
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2SC4466
2SA1693)
10max
80min
50min
20typ
110typ
to100)
to140)
2SC4466
2sa1693
|
PDF
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2SD2141
Contextual Info: Power Transistor 2SD2141 Test Conditions VCB = 330V VEB = 6V IC = 25mA VCE = 2V, IC = 3A IC = 4A, IB = 20mA VCE = 12V, IE = –0.5A VCB = 10V, f = 1MHz ICBO IEBO V BR CEO hFE VCE (sat ) fT COB Ratings 10max 20max 330 to 430 1500min 1.5max 20typ 95typ (Ta=25ºC)
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2SD2141
10max
20max
1500min
20typ
95typ
2SD2141
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PDF
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2SA1907
Abstract: 2SC5099 DSA0016504
Contextual Info: 2SA1907 Silicon PNP Epitaxial Planar Transistor Complement to type 2SC5099 –10max µA –6 V V(BR)CEO IC=–50mA –80min V –6 A hFE –3 A VCE(sat) IC=–12A, IB=–0.2A –0.5max V PC 60(Tc=25°C) W fT VCE=–12V, IE=0.5A 20typ MHz 150 °C COB VCB=–10V, f=1MHz
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2SA1907
2SC5099)
10max
80min
50min
20typ
150typ
18typ
10typ
21typ
2SA1907
2SC5099
DSA0016504
|
PDF
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30typ
Contextual Info: JXWBHP-MM93PG-40 0.5~18GHz Mixer Test report is for reference only. TEST REPORT for JXWBHP-MM93PG-40 Page 1 JXWBHP-MM93PG-40 0.5~18GHz Mixer Technical Specification 0.5-18 RF/LO GHz DC-150 IF(MHz) +7 LO Power(dBm) 8.0 Typ.,11.0 max Conversion Loss(dB) 12 min,20Typ.(0.5-1.0GHz)
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JXWBHP-MM93PG-40
18GHz
DC-150
20Typ.
30Typ.
12Typ.
31Typ.
30typ
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PDF
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|
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2SA1695
Abstract: 2SC4468 017t
Contextual Info: 2SA1695 Silicon PNP Epitaxial Planar Transistor Complement to type 2SC4468 –10max µA V IEBO VEB=–6V –10max µA –140min IC=–50mA V 50min∗ VCE=–4V, IC=–3A A VCE(sat) IC=–5A, IB=–0.5A –0.5max V 100(Tc=25°C) W fT VCE=–12V, IE=0.5A 20typ
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2SA1695
2SC4468)
MT-100
10max
140min
50min
20typ
400typ
2SA1695
2SC4468
017t
|
PDF
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208H
Abstract: RLXF0710
Contextual Info: 1. M echanical D im ensions: 2. Sch em atic: 3. E lectrical Specification s: Inductance: 150uH±10% 1KHz 0.1V Idc: 280mAdc J Du DC Resistance: 0.500 Ohms Max SRF: 3.5MHz Typ 3.0±.50 Q: 20Typ @796KHz Notes: 1. Solderability: Leads shall meet M IL-STD-202G,
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OCR Scan
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MIL-STD-202G,
UL94V-0
E151556
150uHÂ
280mAdc
20Typ
796KHz
208H
RLXF0710
|
PDF
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2SA1695
Abstract: 2SC4468 DSA0016504
Contextual Info: 2SA1695 Silicon PNP Epitaxial Planar Transistor Complement to type 2SC4468 –10max µA V IEBO VEB=–6V –10max µA –140min IC=–50mA V 50min∗ VCE=–4V, IC=–3A A VCE(sat) IC=–5A, IB=–0.5A –0.5max V 100(Tc=25°C) W fT VCE=–12V, IE=0.5A 20typ
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Original
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2SA1695
2SC4468)
MT-100
10max
140min
50min
20typ
400typ
2SA1695
2SC4468
DSA0016504
|
PDF
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2SC4511
Abstract: 2SA1725 FM20
Contextual Info: 2SC4511 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SA1725 V(BR)CEO IC 6 A hFE VEB=6V 10max µA IC=25mA 80min V VCE=4V, IC=2A 50min∗ 10.1±0.2 3 A VCE(sat) IC=2A, IB=0.2A 0.5max V PC 30(Tc=25°C) W fT VCE=12V, IE=–0.5A 20typ MHz
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Original
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2SC4511
2SA1725)
10max
80min
50min
20typ
110typ
to100)
to140)
2SC4511
2SA1725
FM20
|
PDF
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1S1585
Abstract: 1SS239 1S1585 equivalent 1SV147 1ss193 equivalent 1SS SOT mark 1SS337 J9 1SV99 1SV103 1SS241
Contextual Info: Super-Mini Diodes SOT-23MOD, SOT-143MOD. F6 Mark Equivalent other package Type No. A3 1S1585 Anode common Cathode comon Electrical Characteristics (Ta=25°C) Type No. Application V r(V) IO(mA) trr (ns) Connection JX. Remarks 1SS181 High-speed switching 80
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OCR Scan
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OT-23MOD,
OT-143MOD.
1S1585
107YP
1SS239
1S1585 equivalent
1SV147
1ss193 equivalent
1SS SOT mark
1SS337 J9
1SV99
1SV103
1SS241
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PDF
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PBA150F-24
Abstract: PBA150F PBA150F-12 PBA150F-15 PBA150F-36 PBA150F-3R3 PBA150F-48 PBA150F-5 PBA150F-9 3R3 99
Contextual Info: Ordering information Unit type PBA150F PBA 150 1 2 F 3 -5 4 -O 5 1Series name 2 Output wattage 3 Universal input 4 Output voltage 5 Optional C :with Coating G :Low leakage current 0.15mA max / ACIN 240V E :Low leakage current and EMI class A (0.5mA max / ACIN 240V)
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PBA150F
UL508
PBA150F-3R3
PBA150F-5
PBA150F-9
PBA150F-12
Part15
CISPR22-B,
EN55011-B,
EN55022-B
PBA150F-24
PBA150F
PBA150F-12
PBA150F-15
PBA150F-36
PBA150F-48
PBA150F-5
PBA150F-9
3R3 99
|
PDF
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LEP150F
Abstract: LEP150F-24 LEP150F-36 LEP150F-48 NAC-06-472 BVH-21T LEP150F36
Contextual Info: Ordering information Rugged PCB type LEP150F LEP 150 1 2 F 3 -24 4 Recommended Noise Filter NAC-06-472 R High voltage pulse noise type : NAP series Low leakage current type : NAM series *The Noise Filter is recommended *to connect with several devices. MODEL
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LEP150F
NAC-06-472
LEP150F-24
LEP150F-36
LEP150F-48
factor100%
D-63069
LEP150F
LEP150F-24
LEP150F-36
LEP150F-48
NAC-06-472
BVH-21T
LEP150F36
|
PDF
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NAC-06-472
Contextual Info: Ordering information Unit type PAA100F PAA PAA 100 1 2 F 3 -5 5 Recommended Noise Filter NAC-06-472 R -O 4 High voltage pulse noise type : NAP series Low leakage current type : NAM series 1Series name 2Output wattage 3Universal input 4Output voltage 5Optional
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PAA100F
NAC-06-472
PAA100F-3
PAA100F-5
PAA100F-12
PAA100F-15
PAA100F-24
PAA100F-48
AA100F-5)
PAA100F-5)
NAC-06-472
|
PDF
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lca30s24
Abstract: LCA100S-5 LCA15S-5 LCA15S5 LCA30S-12 LCA-15 LCA-13 LCA75S-5
Contextual Info: Ordering information AC-DC Power Supplies Open Frame/Enclosed type LCA10S LC 1 A 2 10 3 S 4 Recommended EMI/EMC Filter NAC-06-472 R High voltage pulse noise type : NAP series Low leakage current type : NAM series -5 5 -O 6 1Series name 2100/120V input 3Output wattage
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Original
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LCA10S
NAC-06-472
100/120V
LCA10S-5
LCA10S-5-H
LCA10S-12
LCA10S-15
LCA10S-24
20MHz
RM101)
lca30s24
LCA100S-5
LCA15S-5
LCA15S5
LCA30S-12
LCA-15
LCA-13
LCA75S-5
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PDF
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VAA1012
Abstract: capacitor .22mf DC110 VAA505 VAA512 G156
Contextual Info: Ordering information On-board type VAA5 VAA 1 5 2 05 3 1Series name 2Output wattage 3Output voltage R MODEL MAX OUTPUT WATTAGE[W] DC OUTPUT VAA505 5.0 VOLTAGE[V] 5 CURRENT[A] 1.0 VAA512 5.4 12 0.45 SPECIFICATIONS INPUT OUTPUT VAA PROTECTION CIRCUIT ISOLATION
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Original
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VAA505
VAA512
VAA1012)
AC132V
20ms/DIV
ACIN85
ACIN116
VAA1012
capacitor .22mf
DC110
VAA505
VAA512
G156
|
PDF
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