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Renesas Electronics Corporation 74HC4020P-E-P 14-stage Binary Counter
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Rochester Electronics	74HC4020P-E-P		28,000		1	1 - 10 - 100 $1.30 1000 $1.08 10000 $0.96	Buy Now
STMicroelectronics VN920PEP-E Buffer/Inverter Based Peripheral Driver, 1 Driver, PDSO24
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Vyrian	VN920PEP-E		8,940			1 - 10 - 100 - 1000 - 10000 -	Get Quote
STMicroelectronics VN920PEPTR-E Buffer/Inverter Based Peripheral Driver, 1 Driver, PDSO24
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Vyrian	VN920PEPTR-E		6,250			1 - 10 - 100 - 1000 - 10000 -	Get Quote

20PEP Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
2SC2879 Abstract: 150PEP Contextual Info: high-Free O utput Transistors F5 Package €3 Po W HF/CB N . 2SC2395 20PEP 2SC2099 30MHz 012.7 09.5 10-12PEP 60PEP 2SC2290 100PEP 2SC2879 150PEP 2SC2510* 200PEP 2SC2652" *: Vcc=28V Vcc=50V F5 Package Po(W) VHF 175MHz \ 012.7 □ 9.5 6 2SC2638 15 2SC2639 32	OCR Scan	30MHz 10-12PEP 20PEP 60PEP 100PEP 150PEP 200PEP 2SC2395 2SC2099 2SC2290 2SC2879	PDF
S-AV17 Abstract: 2SC2879 2SK3075 s-av6 quality FM TRANSMITTER 2SK1310 TOSHIBA RF Power Module S-AV17 S-AU80 2SK2854 2SK3079 Contextual Info: RF Power Devices PRODUCT GUIDE • Selection Guide for RF Power Transistors Package PO W ø 12.7 10PEP 20PEP HF 30 MHz 60PEP 2SC2290 100PEP 2SC2879 150PEP 2SC2510* * : VCC = 28 V Package PO (W) ø 12.7 6 28 VHF 175 MHz 32 80 4 2SC2782 ■ Main Characteristics of RF Power Transistors	Original	10PEP 20PEP 60PEP 2SC2290 100PEP 2SC2879 150PEP 2SC2510* 2SC2782 S-AV17 2SC2879 2SK3075 s-av6 quality FM TRANSMITTER 2SK1310 TOSHIBA RF Power Module S-AV17 S-AU80 2SK2854 2SK3079	PDF
S-AU80 Abstract: TOSHIBA RF Power Module S-AV17 toshiba s-au80 quality FM TRANSMITTER S-AV17 toshiba 2sc2879 2sc2879 equivalent 2SK3075 S-AV6 5252 F ic Contextual Info: RF Power Devices PRODUCT GUIDE • Selection Guide for RF Power Transistors Package PO W ø 12.7 10PEP 20PEP HF 30 MHz 60PEP 2SC2290 100PEP 2SC2879 150PEP 2SC2510* * : VCC = 28 V Package PO (W) ø 12.7 6 28 VHF 175 MHz 32 80 4 2SC2782 ■ Main Characteristics of RF Power Transistors	Original	10PEP 20PEP 60PEP 2SC2290 100PEP 2SC2879 150PEP 2SC2510* 2SC2782 S-AU80 TOSHIBA RF Power Module S-AV17 toshiba s-au80 quality FM TRANSMITTER S-AV17 toshiba 2sc2879 2sc2879 equivalent 2SK3075 S-AV6 5252 F ic	PDF
TO-129 Abstract: 2N4933 TO128 PACKAGE 2N5687 TO-128 Contextual Info: Typ type f MHz Vcc P¡n Pout 2N 3137 T 2N 3309 2N 3375 250 50 250 400 20 50 25 28 0,1 2 0,4 1 0,4 15 2 3 2N 2N 2N 2N 3553 3632 3733 3866 175 175 400 400 28 28 28 28 0,25 3,5 4,0 0,1 2N 2N 2N 2N 3924 3926 3927 4040 175 175 175 400 13,6 13,6 13,6 28 2N 2N 2N	OCR Scan	O-117 O-129 O-128 O-131 TO-129 2N4933 TO128 PACKAGE 2N5687 TO-128	PDF
LA 4440 IC Abstract: LA 4127 IC LA 4127 2N5109 ic la 4440 t 3866 power transistor 2N3927 2N5687 2n5090 2N3375 Contextual Info: 2N5109 SIL IC O N NPN VH F POWER T R A N SIST O R • • • • • Ideal for C A T V Applications Minimum Gain-Bandwidth Product 1.2 GHz 11 dB at 200 MHz Low Distortion Low Noise mechanical data Collector-Base V o lt a g e . 40 V	OCR Scan	2N5109 LINEARIT20 O-117 O-128 O-131 O-129 LA 4440 IC LA 4127 IC LA 4127 2N5109 ic la 4440 t 3866 power transistor 2N3927 2N5687 2n5090 2N3375	PDF
TO128 PACKAGE Abstract: la 4127 t 3866 power transistor LA 4440 IC 2n4127 2n5102 2N4040 2N4041 2N5711 2n4428 Contextual Info: 2N5708 SIL IC O N NPN VH F POWER T R A N S IST O R mechanical specification absolute maximum ratings Tease = 25 °C Collector-Base V o lt a g e . 70 V	OCR Scan	2N5708 O-128 O-128 O-117 O-131 O-129 TO128 PACKAGE la 4127 t 3866 power transistor LA 4440 IC 2n4127 2n5102 2N4040 2N4041 2N5711 2n4428	PDF
t 3866 power transistor Abstract: TIC 136 Transistor 2N5016 2n5102 2N5026 ic 4440 2N4127 TO128 PACKAGE 2N5709 2N4040 Contextual Info: 2N5709 SIL IC O N NPIM V H F POWER T R A N SIST O R 873 80 W PEP SIN G L E S ID E B A N D T R A N SIS T O R mechanical specification D IA 4 L absolute maximum ratings T Ca s e = 25 °C Collector-Base V o l t a g e . 7 0 V	OCR Scan	2N5709 O-117 O-128 O-131 O-129 20PEP t 3866 power transistor TIC 136 Transistor 2N5016 2n5102 2N5026 ic 4440 2N4127 TO128 PACKAGE 2N5709 2N4040	PDF
t 3866 power transistor Abstract: transistor 571 transistor 3866 s transistor d 5702 e d 5703 t 3866 transistor transistor 2N 5688 2N3553 transistor t 3866 3866 transistor 2n RF transistor Contextual Info: 2N3553 SILICON NPN VHF POWER TRANSISTOR 571 HIGH GAIN DRIVE R FOR 28 V FM APPLICATIONS • • 2.5 W a t 175 MHz Minimum Gain 10 dB mechanical data • • - 6 , 6 - » -12,7 mm - -	OCR Scan	2N3553 O-117 O-128 O-131 O-129 20PEP t 3866 power transistor transistor 571 transistor 3866 s transistor d 5702 e d 5703 t 3866 transistor transistor 2N 5688 2N3553 transistor t 3866 3866 transistor 2n RF transistor	PDF
2N3375 Abstract: Transistor 2n3375 2n5708 transistor 3866 s 2N3927 2n4440 texas rf power transistor 2n RF transistor TO128 PACKAGE 2N5690 Contextual Info: 2N3375 SILICON NPN VHF POWER TRANSISTOR Distributed Wafer Interdigital Construction Integrated Diffused Em itter Ballast mechanical data All d im e n s io n s a re in m m TO-60 * absolute maximum ratings at 25 ° C case temperature unless otherwise noted	OCR Scan	2N3375 10/32-NF-2A-Thread O-117 O-128 O-131 O-129 2N3375 Transistor 2n3375 2n5708 transistor 3866 s 2N3927 2n4440 texas rf power transistor 2n RF transistor TO128 PACKAGE 2N5690	PDF
t 3866 power transistor Abstract: transistor 3866 s transistor d 5702 e d 5703 transistor t 3866 t 3866 transistor 2N3866 3866 transistor transistor 3866 2N3866 RF output Design 5698 transistor Contextual Info: 2N3866 SIL IC O N NPN V H F POWER T R A N S IST O R V H F /U H F M E D IU M POW ER A M P L IF IE R • • 1 W at 400 MHz with 10 dB Gain Distributed Construction mechanical specification All d im e n s io n s a re in rnm TO-39 absolute maximum ratings Tease = 25 °C	OCR Scan	2N3866 O-117 O-128 O-131 O-129 20PEP t 3866 power transistor transistor 3866 s transistor d 5702 e d 5703 transistor t 3866 t 3866 transistor 2N3866 3866 transistor transistor 3866 2N3866 RF output Design 5698 transistor	PDF
2N5707 Abstract: TO128 PACKAGE 2n RF transistor 2N4127 transistor d 5702 Heat Sink to-39 2n4440 2N5687 TO-128 2n4041 Contextual Info: 2N5707 SILICON NPN VH F POWER TRANSISTOR Emitter Isolated from Case Intermodulation Distortion Better Than 30 dB at 25 W P.E.P. Emitter Resistor Stabilised for Class AB S.S.B. Applications mechanical specification TO -128 absolute maximum ratings Tease = 25 °C	OCR Scan	2N5707 O-128 O-117 O-131 O-129 2N5707 TO128 PACKAGE 2n RF transistor 2N4127 transistor d 5702 Heat Sink to-39 2n4440 2N5687 TO-128 2n4041	PDF
2N5070 Abstract: LA 4440 IC t 3866 power transistor 32-NF-2A-Thread LA 4127 2N3927 to60 2N5026 TO128 PACKAGE c 3866 transistor Contextual Info: 2N5070 SIL IC O N NPN V H F POWER T R A N S IST O R Emitter Internally Grounded to Case Intermodulation Distortion Better than 30 dB at 25 W P.E.P Emitter Resistor Stabilised mechanical specification absolute maximum ratings Tease = 25 °C Collector-Base V o lt a g e . 65 V	OCR Scan	2N5070 10/32-NF-2A-Thread O-117 O-128 O-131 O-129 2N5070 LA 4440 IC t 3866 power transistor 32-NF-2A-Thread LA 4127 2N3927 to60 2N5026 TO128 PACKAGE c 3866 transistor	PDF
2N3632 Abstract: LA 4127 LA 4440 IC transistor d 5702 e d 5703 2N5102 Effio ic 4440 2N4431 136 2n 2N3927 Contextual Info: 2N3632 SILICO N NPN VHF POWER TRANSISTO R Distributed Wafer Interdigitai Construction Integrated Diffused Emitter Ballast mechanical data Pins 1,15 " 10/32-NF-2AThread All dimensions are in mm TO-60 * absolute maximum ratings Tease - 25 °C Collector-Base V o lt a g e .	OCR Scan	2N3632 10/32-NF-2A-Thread O-117 O-128 O-131 O-129 2N3632 LA 4127 LA 4440 IC transistor d 5702 e d 5703 2N5102 Effio ic 4440 2N4431 136 2n 2N3927	PDF