205AF Search Results

IRLF130

Abstract: SS452 mosfet b44 diode b44
Contextual Info: Preliminary Data Sheet No. PD-9.659 INTERNATIOIM AL R E C T IFIE R r i o R REPETITIVE AVALANCHE AND dv/dt RATED IRLF130 HEXFET TRANSISTORS LOGIC LEVEL L SERIES N-CHANNEL 100 Volt, 0.20 Ohm Logic Level HEXFET® TO-205AF TO-39 Hermetic Package The Logic Level ‘L’ series of power MOSFETs are designed

FRL9130R

Abstract: 2E12 FRL9130D FRL9130H Rad Hard in Fairchild for MOSFET
Contextual Info: FRL9130D, FRL9130R, FRL9130H 5A, -100V, 0.550 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Features Package • 5A, -100V, RDS on = 0.550Ω TO-205AF • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current

LD 33 regulator

Abstract: JANTXV2N6800 IRFF330 JANTX2N6800
Contextual Info: PD - 90432C IRFF330 JANTX2N6800 JANTXV2N6800 REF:MIL-PRF-19500/557 400V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-205AF Product Summary Part Number IRFF330 BVDSS 400V RDS(on) 1.0Ω ID 3.0A  The HEXFET technology is the key to International

2E12

Abstract: 3E12 FRL430D FRL430H FRL430R Rad Hard in Fairchild for MOSFET
Contextual Info: FRL430D, FRL430R, FRL430H 2A, 500V, 2.50 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 2A, 500V, RDS on = 2.50Ω TO-205AF • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current

Contextual Info: SCF2N6851T2 JANTX2N6851 JANTXV2N6851 POWER MOSFET FOR RUGGED ENVIRONMENTS TO-205AF TO-39 DESCRIPTION REF: MIL-PRF-19500/564 • P-Channel  -200 Volt  < 0.800 Ohms  -4 Amp SEMICOA’s MOSFET technology is designed for rugged environments providing excellent long term reliabiity. SEMICOA’s long heritage providing military grade technology and packaging allows these devices to be

IRF 260 N

Abstract: IRFF220 JANTX2N6790 JANTXV2N6790
Contextual Info: PD - 90427D REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE TO-205AF IRFF220 JANTX2N6790 JANTXV2N6790 REF:MIL-PRF-19500/555 200V, N-CHANNEL Product Summary Part Number IRFF220 BVDSS RDS(on) ID 200V 3.5A 0.80Ω T0-39 ® The HEXFET technology is the key to International

Contextual Info: FRL130D, FRL130R, FRL130H 8A, 100V, 0.180 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 8A, 100V, RDS on = 0.180^ TO-205AF • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)

Contextual Info: W vys S RFL1N12L, RFL 1N15L S e m ico n d ucto r 7 1A, 120V and 150V, 1.900 Ohm, Logic Level, N-Channel Power MOSFETs September 1998 Features Description • 1A, 120V and 150V RFL1N12L TO -205AF RFL1N12L These are N-Channel enhancem ent mode silicon gate power field effect transistors specifically designed for use

2E12

Abstract: FRL230D FRL230H FRL230R 1E14
Contextual Info: FRL230D, FRL230R, FRL230H 5A, 200V, 0.500 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 5A, 200V, RDS on = 0.500Ω TO-205AF • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current

IRFF130

Contextual Info: PD - 90430C IRFF130 JANTX2N6796 JANTXV2N6796 REF:MIL-PRF-19500/557 100V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-205AF Product Summary Part Number IRFF130 BVDSS 100V RDS(on) 0.18Ω ID 8.0A  The HEXFET technology is the key to International

Contextual Info: PD -90428D REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE TO-205AF IRFF320 JANTX2N6792 JANTXV2N6792 REF:MIL-PRF-19500/555 400V, N-CHANNEL Product Summary Part Number IRFF320 BVDSS RDS(on) 400V 1.8Ω ID 2.0A ® The HEXFET technology is the key to International Rectifier’s

Contextual Info: PD - 90425C IRFF310 JANTX2N6786 JANTXV2N6786 REF:MIL-PRF-19500/556 400V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-205AF Product Summary Part Number IRFF310 BVDSS 400V RDS(on) 3.6Ω ID 1.25A  The HEXFET technology is the key to International

Contextual Info: PD - 90382 REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-205AF IRFF9210 200V, P-CHANNEL Product Summary Part Number IRFF9210 BVDSS -200V RDS(on) 3.0Ω ID -1.5A  The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.

Contextual Info: P-CHANNEL POWER MOSFET IRFF9130 / 2N6849 • MOSFET Transistor In A Hermetic Metal TO-205AF Package • Single Pulse Avalanche Energy Rated • Designed For Switching, Power Supply, Motor Control and Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated

low range photo transistor

Abstract: frl9130 2E12 2N7308D 2N7308H 2N7308R
Contextual Info: S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRL9130 D, R, H 2N7308D, 2N7308R 2N7308H Radiation Hardened P-Channel Power MOSFETs November 1994 Features Package • 5A, -100V, RDS(on) = 0.550Ω TO-205AF • Second Generation Rad Hard MOSFET Results From New Design Concepts

FRL230* harris

Abstract: 1E14 2E12 2N7275D 2N7275H 2N7275R FRL230 2N7275
Contextual Info: S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRL230 D, R, H 2N7275D, 2N7275R 2N7275H Radiation Hardened N-Channel Power MOSFETs November 1994 Features Package • 5A, 200V, RDS(on) = 0.500Ω TO-205AF • Second Generation Rad Hard MOSFET Results From New Design Concepts

423R

Abstract: f423 IR 423
Contextual Info: 33 HARRIS IR F F420/421/422/423 IR FF420R/421 R /422R /423R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Package Features TO-205AF • 1.4A and 1.6A, 450V - 500V • rDS on = 3.0(1 and 4.0fi • Singla Pulsa Avalancha Energy Rated* GATE SOURCE

N-channel enhancement 200V 60A

Abstract: TC 9310 IC DATA SHEET 1E14 2E12 FRL234D FRL234H FRL234R
Contextual Info: FRL234D, FRL234R, FRL234H 4A, 250V, 0.700 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 4A, 250V, RDS on = 0.700Ω TO-205AF • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current

Contextual Info: Government and Space Products International I O R Rectifier Part Number «VOSS RDS on W (H T C=2S°C ^ W # Tj=ipO °C 1 W . Rating Rwls @ T t =25°C ^ Fax on Demand Outline Number HEXFET Power MOSFETs Key Radiation Hardened TQ-205AF (TO-39) P-Channel IRH F9I30

Contextual Info: 3 m a r d is FSL130D, FSL130R Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs June 1997 Features Package • 8 A ,1 00 V ,rDS oN = 0.230n TCJ-205AF • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects

B402-6

Contextual Info: Radiation Hardened MOSFETs, MegaRAD Series N-Channel TO-205AF _ k a 0.18 b 100 V 8 FRL130, JANSR2N7272 0.50 5 0.70 4 2.50 200V 250V 500V FRL230, JANSR2N7275 FRL234, JANSR2N7278 2 N-Channel TO-258AA rDS ON (n ) b 100 V 0.050 41 FRE160, 2N7300 0.080

Contextual Info: m HARRIS S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRL230 D, R, H 2N7275D, 2N7275R 2N7275H Radiation Hardened N-Channel Power MOSFETs December 1992 Package Features • 5A.200V, RDS(on) >0.500Q T0-205AF • Second Generation Rad Hard MOSFET Results From New Design Concept*

Contextual Info: ill H a r r is U U S E M I C O N D U C T O R 2N7311D, 2N7311R 2N731 1H REGISTRATION PENDING Currently Available as FRL9230 D, R, H . • Radiation Hardened P-Channel Power MOSFETs Decem ber 1992 Package Features • 3A, -200V, RDS(on) > 1.300 TO-205AF • Second Generation Rad Hard MOSFET Results From New Design Concepts

2N7308

Contextual Info: H A R R IS SEMI CONDUCTOR REGISTRATION PENDING Currently Available as FRL9130 D, R, H 2N7308D, 2N7308R 2N7308H Radiation Hardened P-Channel Power MOSFETs December 1992 Package Features • 5A, -100V, ROS(on) = 0.550n TO-205AF • Second Generation Rad Hard MOSFET Result* From New Design Concepts