2010R Search Results

RPE2

Abstract: RPA-2003
Contextual Info: TDK-Lambda RPE & RPA SERIES SPECIFICATIONS Model Items 1 Rated Voltage AC, DC 2 Rated Current (AC, DC) 3 4 RPE/RPA-2003(L), RPE/RPA-2006(L), RPE-2010(L), RPE/RPA-2003R(L) RPE/RPA-2006R(L) RPE-2010R(L) 250 V *1 Test Voltage (terminals to base plate, 1min AC)

Contextual Info: Liquid Crystal Displays 20 character x 2 lines reflective character module RCM 2010R T h e R C M 2 0 1 OR is a re fle c tiv e T N ty p e liq uid crystal m o d u le w ith a bu ilt-in c o n tr o lle r /d r iv e r LSI a n d a d is p la y c a p a c ­ ity o f 2 0 c h a ra c te rs X 2 lines.

Contextual Info: r • össa^bs 000^240 sto « s il jiumsuskms SSI 32R 2010R 10-Channel Thin Film Read/Write Device A TDK Group/Company October 1993 DESCRIPTION FEATURES The SSI 2010R is an integrated read/write circuit designed for use with two terminal heads in disk drive

Contextual Info: ÖESBTbS 0 0 0^ 24 0 SbD « S I L SSI 32R 2010R 10-Channel Thin Film Read/Write Device ¿wm&i t fans' A TDK Group/Company October 1993 DESCRIPTION FEATURES The SSI 2010R is an integrated read/write circuit designed for use with two terminal heads in disk drive

Contextual Info: SSI 2010R wmsuskms 10-Channel Thin Film Read/Write Device A TDK Group/Company Preliminary Data January 1993 FEATURES DESCRIPTION The SSI 2010R is an integrated read/write circuit designed for use with two terminal heads in disk drive systems. The device contains up to ten channels of

202RV

Abstract: PS208R
Contextual Info: DATA SHEET PS200R~2010R FAST SWITCHING PLASTIC RECTIFIER VOLTAGE 50 to 1000 Volts 2.0 Amperes CURRENT DO-15 Unit: inch mm FEATURES • High current capability. .034(.86) .028(.71) 1.0(25.4)MIN. • Plastic package has Underwriters Laboratory Flammability Classification 94V-O utilizing

MAX669

Abstract: fairchild mosfet selection guide 593D686X0020E2W DO3316P-472 HRF302A MAX668 MBRS340T3 TPSE686M020R0150 FDS5610
Contextual Info: 19-4778; Rev 0; 8/98 MAX668 Evaluation Kit The MAX668 evaluation kit EV kit combines a constant-frequency, pulse-width-modulation (PWM) stepup controller with an external N-channel MOSFET and Schottky diode to provide a regulated output voltage. The EV kit accepts a +3V to VOUT input and converts it

D2N60

Abstract: U2N60
Contextual Info: PJD2N60 / PJU2N60 TO-252 / TO-251 600V N-Channel Enhancement Mode MOSFET FEATURES • 2A, 600V, RDS ON =4.6Ω@VGS=10V, ID=1.0A • • • • • • TO-251 TO-252 Low ON Resistance Fast Switching Low Gate Charge Fully Characterized Avalanche Voltage and Current

TLS2271

Abstract: 32H6742 schematic diagram of seagate hard disk pcb tls2270 TLS2247 TLS2251 TLS2245 1575R SP4107A 32H6910
Contextual Info: TABLE OF CONTENTS How to use the Data CD-ROM Texas Instruments Storage Products Overview Alpha/Numeric Index 2000 Short Form Catalog Discontinued Parts List DSP and ASIC Quality and Technology HDD Read/Write Amplifiers MR Head Read/Write Thin-Film Head Read/Write

PJ2306

Contextual Info: PJ2306 30V N-Channel Enhancement Mode MOSFET - ESD Protected SOT-23 FEATURES Unit：inch mm • RDS(ON), VGS@10V,IDS@3.2A=65mΩ 0.006(0.15)MIN. • RDS(ON), VGS@4.5V,IDS@2.8A=85mΩ 0.120(3.04) 0.110(2.80) • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance

PQo9RD11

Abstract: pqo9rd11.vlh PQ05RDI PQ05RD11 PQ12RD 05RDL PQ12RD11 PQO9
Contextual Info: PQ05RD11 Series Low Power-Loss Voltage Regulators PQ05RDI 1 Series 1A Output, ;eneral Purpose Imw Power-loss Voltage Regulators • ■ (Unit : mm Outline Dimensions Features ● 1,OW Power-loss ( Uropnut voltage : MAX.O.5V at Io = ().5A) ● Lin?-up fnr 5V, 9V and 12V (~utput type

2029M

Abstract: RCM2044 RCM2037R RCM2034R LCD display 20X2 RCM2010R 5 mm Character Height LCD Modules RCM2038R 40x2 lcd RCM2019R
Contextual Info: Character Display LCD Modules TN Character Modules #Quick Reference Note : d J Boxed : With back light, Others reflective Display contents Lighting characters x lines r Reflective OC) x i2 M a x . 64.SX13.8 3.1 x 5.76 1 /1 6 +5 0 — + 50 80 x 36 x l2M ax.

kf 203 transistor

Abstract: 1E06H MOSFET and parallel Schottky diode n mosfet pspice parameters pspice model TOTEM POLE transistor schottky model spice PIN diode Pspice model delta rectifier all model Lambda Pulse Modulator pspice model gate driver
Contextual Info: AN1631/D Using PSPICE to Analyze Performance of Power MOSFETs in Step−Down, Switching Regulators Employing Synchronous Rectification http://onsemi.com APPLICATION NOTE Prepared by: Rick Honda and Scott Deuty INTRODUCTION This paper will describe an easy method to analyze

R015F

Abstract: Dale R015F CDRH104-4R7 Dale R015F resistor MAX669 R020f fairchild mosfet selection guide CDRH104 Sumida 4.7uH IRF7401
Contextual Info: 19-4778; Rev 0a; 8/98 MAX668 Evaluation Kit Features ♦ +3V to VOUT Input Range as shipped ♦ +12V or Adjustable Output Voltage ♦ Output Current Up to 1A ♦ N-Channel External MOSFET ♦ 4µA IC Shutdown Current ♦ 500kHz Switching Frequency ♦ Surface-Mount Components

13001 H

Abstract: 5VDC Telecom relay AXICOM V23026 AXICOM V23026-D1021-B201 AXICOM Relay V23026-C1052
Contextual Info: Signal Relays Axicom P1 Relay V23026 n Directly triggerable with TTL standard modules as ALS, HCT & ACT line 13.5x7.85mm 0.531x0.309” n Switching current 1 A n Bifurcated 1 form C (CO) contact n Immersion cleanable AXICOM n High sensitivity results in low nominal

Contextual Info: PJ2306 30V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES • RDS ON , VGS@4.5V,IDS@2.8A=85mΩ . 0.006(0.15)M IN • RDS(ON), VGS@10V,IDS@3.2A=65mΩ 0.120(3.04) 0.110(2.80) • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance

TSP160C

Abstract: ER1602CT 727 thyristor uf1002ct PANJIT ER306 1N4004 SOD-123 272 zk thyristor mw 137 600g pg2010 D804C
Contextual Info: TABLE OF CONTENT THYRISTOR SURGE PROTECTION DEVICE • 50Amp 10/1000 µs Thyristor Surge Protection Device . Page 02 • 80Amp 10/1000 µs Thyristor Surge Protection Device . Page 04

1N6642 radiation

Abstract: 2010-REV 1N6642 die
Contextual Info: DIODES SCA1N6638 * SCA1N6642 SWITCHING DIODES * SCA1N6643 Radiation Hardness Assured Y R A DESCRIPTION This “high reliability high-speed switching” diode is suitable for numerous military applications. This die meets the most stringent Hybrid applications.

Contextual Info: PJ2306 30V N-Channel Enhancement Mode MOSFET - ESD Protected SOT-23 FEATURES Unit：inch mm • RDS(ON), VGS@10V,IDS@3.2A=65mΩ 0.006(0.15)MIN. • RDS(ON), VGS@4.5V,IDS@2.8A=85mΩ 0.120(3.04) 0.110(2.80) • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance

Q4010L4

Abstract: Q5010L4 Q6010L4
Contextual Info: TECCOR ELECTRONICS, INC. MT2 U V 1 G MT1 MT2 “L” Package TO-220AB Thermotab Isolated Mounting Tab) Product Description The sensitive gate triac is a bidirectional A C switch and is gate controlled for either polarity o f main term inal voltage. Its prim ary purpose is for AC switching and phase control

PK-60 ECT

Contextual Info: DIODES SCA1N5807 * SCA1N5809 * SCA1N5811 RECTIFIERS High Power / Ultra Fast Recovery Radiation Hardness Assured Y R A DESCRIPTION This “high reliability ultra fast recovery” rectifier diode family is superior in leakage current and suitable for numerous

Contextual Info: PJP24N10 / PJF24N10 TO-220AB / ITO-220AB 100V N-Channel Enhancement Mode MOSFET FEATURES • RDS ON , VGS@10V,IDS@30A=24mΩ TO-220AB ITO-220AB • Low On Resistance • Excellent Gate Charge x RDS(ON) Product ( FOM ) • Fully Characterized Avalanche Voltage and Current

Contextual Info: PJ2306 30V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES • RDS ON , VGS@10V,IDS@3.2A=65mΩ • RDS(ON), VGS@4.5V,IDS@2.8A=85mΩ • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Very Low Leakage Current In Off Condition

schottky DIODE MOTOROLA B14

Abstract: schottky DIODE MOTOROLA B12 kf 203 transistor MBR140 equivalent motorola power transistor 7752 DIODE MOTOROLA B14 pspice model TOTEM POLE Motorola transistors 7752 DIODE MOTOROLA B13 pspice model gate driver
Contextual Info: MOTOROLA Order this document by AN1631/D SEMICONDUCTOR APPLICATION NOTE AN1631 Using PSPICE to Analyze Performance of Power MOSFETs in Step-Down, Switching Regulators Employing Synchronous Rectification Prepared by: Rick Honda and Scott Deuty Motorola, Inc.