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PanJit Semiconductor


PanJit Semiconductor PJ2306_R2_00001 PJTPJ2306R200001 (Alt: PJ2306_R2_00001)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Silica	PJ2306_R2_00001			10 Weeks	12,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
PanJit Semiconductor PJ2306_R1_00001 (Alt: PJ2306_R1_00001)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Silica	PJ2306_R1_00001			52 Weeks	168,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote

PJ2306 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
PJ2306 Contextual Info: PJ2306 30V N-Channel Enhancement Mode MOSFET - ESD Protected SOT-23 FEATURES Unit：inch mm • RDS(ON), VGS@10V,IDS@3.2A=65mΩ 0.006(0.15)MIN. • RDS(ON), VGS@4.5V,IDS@2.8A=85mΩ 0.120(3.04) 0.110(2.80) • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance	Original	pj2306 ot-23 mil-std-750 2010-rev	PDF
Contextual Info: PJ2306 30V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES • RDS ON , VGS@4.5V,IDS@2.8A=85mΩ . 0.006(0.15)M IN • RDS(ON), VGS@10V,IDS@3.2A=65mΩ 0.120(3.04) 0.110(2.80) • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance	Original	pj2306 2002/95/ec ot-23 mil-std-750 +12010-rev	PDF
Contextual Info: PJ2306 30V N-Channel Enhancement Mode MOSFET - ESD Protected SOT-23 FEATURES Unit：inch mm • RDS(ON), VGS@10V,IDS@3.2A=65mΩ 0.006(0.15)MIN. • RDS(ON), VGS@4.5V,IDS@2.8A=85mΩ 0.120(3.04) 0.110(2.80) • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance	Original	pj2306 ot-23 2011/65/eu iec61249 +12010-rev	PDF
Contextual Info: PJ2306 30V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES • RDS ON , VGS@10V,IDS@3.2A=65mΩ • RDS(ON), VGS@4.5V,IDS@2.8A=85mΩ • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Very Low Leakage Current In Off Condition	Original	pj2306 2010-rev	PDF
PJ2306 Abstract: PJ-23 PJ230 Contextual Info: PJ2306 30V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES • RDS ON , VGS@10V,IDS@3.2A=65mΩ • RDS(ON), VGS@4.5V,IDS@2.8A=85mΩ • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Very Low Leakage Current In Off Condition	Original	pj2306 2002/95/ec ot-23 mil-std-750 +32010-rev pj-23 pj230	PDF