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    PJ230 Search Results

    PJ230 Datasheets (1)

    Panjit International
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    PJ2301_R1_00001
    		Panjit International 20V P-CHANNEL ENHANCEMENT MODE M Original PDF 295.14KB 6
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    PJ230 Price and Stock

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    ABB Group 675ETPSP-J2300

    15KV 900A CU ETP ELBOW KIT J2300
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Sager 675ETPSP-J2300 1
    • 1 $1736.27
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    PanJit Semiconductor PJ2301_R1_00001

    (Alt: PJ2301_R1_00001)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Silica PJ2301_R1_00001 18 Weeks 36,000
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    PanJit Semiconductor PJ2306_R2_00001

    PJTPJ2306R200001 (Alt: PJ2306_R2_00001)
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    Avnet Silica PJ2306_R2_00001 10 Weeks 12,000
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    PanJit Semiconductor PJ2306_R1_00001

    (Alt: PJ2306_R1_00001)
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    Avnet Silica PJ2306_R1_00001 52 Weeks 168,000
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    PJ230 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    pj2319

    Abstract: pj2329 PJ2336 PJ2319CX PJ2329CX PJ2336CX PJ2315CX PJ2318CX PJ2328CX 2.85V SOT 300mA
    Contextual Info: PJ2300Series 300mA CMOS LDO With Enable T he PJ2300 family is a positive voltage linear regulator SOT-23-5 developed utilizing CMOS technology featured low quiescent current 30µA typ , low dropout voltage, and high output voltage accuracy, making them ideal for battery


    Original     		pj2300series300mapj2300ot-23-5+12ot-23-5l1000pfpj2319pj2329pj2336pj2319cxpj2329cxpj2336cxpj2315cxpj2318cxpj2328cx2.85v sot 300ma PDF

    PJ2306

    Contextual Info: PJ2306 30V N-Channel Enhancement Mode MOSFET - ESD Protected SOT-23 FEATURES Unit：inch mm • RDS(ON), VGS@10V,IDS@3.2A=65mΩ 0.006(0.15)MIN. • RDS(ON), VGS@4.5V,IDS@2.8A=85mΩ 0.120(3.04) 0.110(2.80) • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance


    Original     		pj2306ot-23mil-std-7502010-rev PDF

    Contextual Info: PJ2306 30V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES • RDS ON , VGS@4.5V,IDS@2.8A=85mΩ . 0.006(0.15)M IN • RDS(ON), VGS@10V,IDS@3.2A=65mΩ 0.120(3.04) 0.110(2.80) • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance


    Original     		pj23062002/95/ecot-23mil-std-750+12010-rev PDF

    PJ230

    Contextual Info: PJ2301 20V P-Channel Enhancement Mode MOSFET FEATURES • RDS ON , VGS@-4.5V,ID@-2.2A=105mΩ 0.120(3.04) • Advanced Trench Process Technology 0.110(2.80) • High Density Cell Design For Ultra Low On-Resistance • Specially Designed for DC/DC converters


    Original     		pj2301dvh6273dfndjh2011-revrb500v-40+1pj230 PDF

    Contextual Info: PJ2306 30V N-Channel Enhancement Mode MOSFET - ESD Protected SOT-23 FEATURES Unit：inch mm • RDS(ON), VGS@10V,IDS@3.2A=65mΩ 0.006(0.15)MIN. • RDS(ON), VGS@4.5V,IDS@2.8A=85mΩ 0.120(3.04) 0.110(2.80) • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance


    Original     		pj2306ot-232011/65/euiec61249+12010-rev PDF

    PJ2301

    Contextual Info: PJ2301 20V P-Channel Enhancement Mode MOSFET FEATURES • RDS ON , VGS@-1.8V,ID@-1.5A=200mΩ • RDS(ON), VGS@-4.5V,ID@-2.2A=105mΩ • Advanced Trench Process Technology 0.120(3.04) 0.110(2.80) • High Density Cell Design For Ultra Low On-Resistance • Specially Designed for DC/DC converters


    Original     		pj2301dvh6273dfndjh2011-rev PDF

    Contextual Info: PJ2306 30V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES • RDS ON , VGS@10V,IDS@3.2A=65mΩ • RDS(ON), VGS@4.5V,IDS@2.8A=85mΩ • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Very Low Leakage Current In Off Condition


    Original     		pj23062010-rev PDF

    PJ2301

    Contextual Info: PJ2301 20V P-Channel Enhancement Mode MOSFET FEATURES • RDS ON , VGS@-4.5V,ID@-2.2A=105mΩ 0.120(3.04) • Advanced Trench Process Technology 0.110(2.80) • High Density Cell Design For Ultra Low On-Resistance • Specially Designed for DC/DC converters


    Original     		pj23012002/95/ecot-23mil-std-750+12011-rev PDF

    PJ2301

    Contextual Info: PJ2301 20V P-Channel Enhancement Mode MOSFET FEATURES • RDS ON , VGS@-4.5V,ID@-2.2A=105mΩ 0.120(3.04) • Advanced Trench Process Technology 0.110(2.80) • High Density Cell Design For Ultra Low On-Resistance • Specially Designed for DC/DC converters


    Original     		pj23012002/95/ecot-23mil-std-750+12011-rev PDF

    PJ2306

    Abstract: PJ-23 PJ230
    Contextual Info: PJ2306 30V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES • RDS ON , VGS@10V,IDS@3.2A=65mΩ • RDS(ON), VGS@4.5V,IDS@2.8A=85mΩ • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Very Low Leakage Current In Off Condition


    Original     		pj23062002/95/ecot-23mil-std-750+32010-revpj-23pj230 PDF