PJ2301 Search Results
PJ2301 Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| PJ2301_R1_00001 | Panjit International | 20V P-CHANNEL ENHANCEMENT MODE M | Original | 295.14KB | 6 |
PJ2301 Price and Stock
PanJit Semiconductor PJ2301_R1_00001(Alt: PJ2301_R1_00001) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|
PJ2301_R1_00001 | 18 Weeks | 36,000 |
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Get Quote | ||||||
PJ2301 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
PJ230Contextual Info: PJ2301 20V P-Channel Enhancement Mode MOSFET FEATURES • RDS ON , VGS@-4.5V,ID@-2.2A=105mΩ 0.120(3.04) • Advanced Trench Process Technology 0.110(2.80) • High Density Cell Design For Ultra Low On-Resistance • Specially Designed for DC/DC converters |
Original |
pj2301dvh6273dfndjh2011-revrb500v-40+1 | |
PJ2301Contextual Info: PJ2301 20V P-Channel Enhancement Mode MOSFET FEATURES • RDS ON , VGS@-1.8V,ID@-1.5A=200mΩ • RDS(ON), VGS@-4.5V,ID@-2.2A=105mΩ • Advanced Trench Process Technology 0.120(3.04) 0.110(2.80) • High Density Cell Design For Ultra Low On-Resistance • Specially Designed for DC/DC converters |
Original |
pj2301dvh6273dfndjh2011-rev | |
PJ2301Contextual Info: PJ2301 20V P-Channel Enhancement Mode MOSFET FEATURES • RDS ON , VGS@-4.5V,ID@-2.2A=105mΩ 0.120(3.04) • Advanced Trench Process Technology 0.110(2.80) • High Density Cell Design For Ultra Low On-Resistance • Specially Designed for DC/DC converters |
Original |
pj23012002/95/ecot-23mil-std-750+1 | |
PJ2301Contextual Info: PJ2301 20V P-Channel Enhancement Mode MOSFET FEATURES • RDS ON , VGS@-4.5V,ID@-2.2A=105mΩ 0.120(3.04) • Advanced Trench Process Technology 0.110(2.80) • High Density Cell Design For Ultra Low On-Resistance • Specially Designed for DC/DC converters |
Original |
pj23012002/95/ecot-23mil-std-750+1 |