200W VHF Search Results

Contextual Info: Product Review RPFow& erWR S m 15 8 o-.fr2 et5 rM H V/-hH FU z/FH2F00W MFJ offer the best RF Power & SWR meter for 1.8-525Mhz - HF / VHF / UHF 200W. This awesome product currently in stocks, you can get this Electronics now for only $133.44. New More Information»

200W PUSH-PULL

Abstract: BAL0102-150 200w Transistor
Contextual Info: GAE GREAT AMERICAN ELECTROINCS BAL0102-150 Silicon NPN high power VHF transistor BAL0102-150 transistor assembly is designed for wideband push-pull power amplifiers required in AM or FM communication equipment (100-200 Mhz frequency range). Output Power:

Contextual Info: A ACD0900S3C VHF/UHF CATV/TV Tuner Downconverter Advanced Product Information FEATURES • Integrated Monolithic Downconverter • 8 dB Noise Figure • 10 dB Conversion Gain • High Linearity • Small Size • Low Cost • High Reliability DESCRIPTION The ACD0900 MMIC is a high performance downconverter

2sc2652

Abstract: 2SC2640 2SC2642 2SC2643
Contextual Info: - 1 9 0 - A ifliS ig ft ^ — as a j i » & : vhf w ji# * 2 Vc e o V 17 am V e b o (V) 4 I c (A) 6 C ob (p F) i f t * 2 8 f (Vcc= 12 .5V , f=175M H z) P c(W )* 70 Tj (°C) 175 iT ,. > ic cn 2 S C 2 6 4 1 f f f i * : DHF(400MHz) s s w ) iiitl V c e o (V)

Contextual Info: Part Number: Integra IDM30512CW50 TECHNOLOGIES, INC. Broadband RF Power MOSFET Silicon MOSFET − High Power Gain − Superior thermal stability The high power transistor part number IDM30512CW50 is designed for VHF/UHF-Band systems operating over the frequency band 30-512 MHz under CW conditions. Over the

"RF MOSFET" 300W

Abstract: transistor tl 187 "RF MOSFETs" RF POWER MOSFET IXZ1210N50L 200W vhf "RF MOSFET" class d 200w IXZ12210N50L mosfet class ab rf
Contextual Info: IXZ12210N50L RF Power MOSFET N-Channel Enhancement Mode Linear 175MHz RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for Linear Operation Ideal for Class AB & C, Broadcast & Communications Applications VDSS = 500 V ID25 = 10 A 125V operating

TRANSISTOR DATASHEET D1555

Abstract: d1555 transistor TRANSISTOR D1651 D1555 D1557 D1554 d1651 transistor s1854 transistor d1555 transistor d1878
Contextual Info: 型号 2N109 2N1304 2N1305 2N1307 2N1613 2N1711 2N1893 2N2102 2N2148 2N2165 2N2166 2N2219A 2N2222A 2N2223 2N2223A 2N2243A 2N2369A 2N2857 2N2894 2N2905A 2N2906A 2N2907A 2N2917 2N2926 2N2955 2N3019 2N3053 2N3054 2N3055 2N3055 2N3055H 2N3251 2N3375 2N3439 2N3440

Pallet VHF Power Amplifier

Abstract: BLF578 BLF578 fm band Pallet VHF Power Amplifier TELEVISION blf574 BLF571 BLA6H1214-500 1200w power amplifier LDMOS DVB-T transistors power combiner 4 watt VHF
Contextual Info: RF Power Presentation Broadcast ISM , Microwave and Cellular Richard Marlow: European Regional Marketing February 2009 Microwave, Broadcast & ISM Markets Broadcast (TV and radio transmission) – – – – – NXP has a long history (as Philips) and excellent reputation in the market

rf power mosfet

Abstract: mosfet class ab rf IXZ215N12L "RF MOSFET" 300W 200W vhf 300w mosfet
Contextual Info: IXZ215N12L RF Power MOSFET N-Channel Enhancement Mode Linear 175MHz RF MOSFET Low Capacitance Z-MOS TM MOSFET Process Optimized for Linear Operation Ideal for Class AB & C, Broadcast & Communications Applications PRELIMINARY Symbol Test Conditions Maximum Ratings

CLC5506

Abstract: CLC5506IM CLC5506IMX CLC5506PCASM CLC5956 M14A SOIC-14 DIGITAL IF RECEIVER
Contextual Info: CLC5506 Gain Trim Amplifier GTA General Description The CLC5506 is a low-noise amplifier with programmable gain for use in cellular base stations, WLL, radar and IF subsystems where gain-control is required to increase the dynamic range. The CLC5506 allows designers to

2SA1138

Abstract: 2SC2673 2sc2681 2SA1020 200W vhf 2SC2676 2SC2644 2SC2637 2SC2638 2SC2640
Contextual Info: - 130 - X Ta=25Tlt *EP(àTc=25tï 32 2SC2636 2SC2637 & ft £ m m 2SC2638 2SC2639 2SC2640 2SC2641 ïRS scs 2SC2643 2SC2647 2SC2652 M3Í m VCBO VcEO ic(DC) Pc Pc* ICBO lf (V) (V) (A) m m (iiA) (V) vntäx) 30 20 0.05 300 300 0.1 15 35 17 2 15 VHF PA 35 17 3.5

Thyristor Xo 602 MA

Abstract: 5A/1/Thyristor Xo 602 MA ah 90360 1N126 2N339 2N3201 transistor bf 175 germanium transistor epitaxial mesa 2N241
Contextual Info: GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS This chapter is primarily devoted to condensed specifications of General Electric’s thyristors, thyristor assemblies, trigger devices, and

Contextual Info: Part Number: Integra IDM500CW200 TECHNOLOGIES, INC. UHF-Band RF Power MOSFET Silicon MOSFET − High Power Gain − Superior thermal stability The high power transistor part number IDM500CW200 is designed for VHF/UHF-Band systems operating at 1-500 MHz. Operating at CW

Anadigics MMIC Downconverter

Abstract: 1SV245 ACD0900
Contextual Info: ACD0900 VHF/UHF CATV/TV Tuner Downconverter Data Sheet - Rev 2.1 FEATURES • • • • • • • Integrated Monolithic Downconverter 8 dB Noise Figure 10 dB Conversion Gain High Linearity Small Size Low Cost High Reliability S3 Package Modified 16 Pin SOIC PRODUCT DESCRIPTION

mosfet 4702

Abstract: IXZ2210N50L IXZ210N50L S 8050 d 331 transistor dv 7812 9974 mosfet 9540 mosfet 78724 78105 MJ 7364
Contextual Info: IXZ210N50L & IXZ2210N50L RF Power MOSFET N-Channel Enhancement Mode Linear 175MHz RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for Linear Operation Ideal for Class AB & C, Broadcast & Communications Applications VDSS = 500 V ID25 = 10 A 150V operating

IXZ2210N50L

Abstract: IXz210n50l "RF MOSFET" 300W mosfet 4702 9540 mosfet IXYS RF
Contextual Info: IXZ210N50L & IXZ2210N50L RF Power MOSFET N-Channel Enhancement Mode Linear 175MHz RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for Linear Operation Ideal for Class AB & C, Broadcast & Communications Applications VDSS = 500 V ID25 = 10 A 150V operating

IXZH10N50LA

Abstract: ixzh10n50l IXZH10N50 7310 mosfet mosfet 168.54 IXZ210N50L 78105 ixzh ixzh10n TD 6905
Contextual Info: IXZH10N50LA/B RF Power MOSFET N-Channel Enhancement Mode Linear 175MHz RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for Linear Operation in Common Source Mode Test Conditions VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ

SD1485

Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 SD1485 RF & MICROWAVE TRANSISTORS TV/LINEAR APPLICATIONS Features • • • • • • 170 - 230 MHz 32 VOLTS POUT = 200 WATTS GP = 11.0 dB GAIN MINIMUM INTERNAL INPUT MATCHING

SD1485

Abstract: 230-MHZ J37 transistor X500mA
Contextual Info: SD1485 RF & MICROWAVE TRANSISTORS TV/LINEAR APPLICATIONS Features • • • • • • 170 - 230 MHz 32 VOLTS POUT = 200 WATTS GP = 11.0 dB GAIN MINIMUM INTERNAL INPUT MATCHING COMMON EMITTER CONFIGURATION DESCRIPTION: The SD1485 is a gold metallized epitaxial silicon NPN planar

Contextual Info: SD1485 RF & MICROWAVE TRANSISTORS TV/LINEAR APPLICATIONS Features • • • • • • 170 - 230 MHz 32 VOLTS POUT = 200 WATTS GP = 11.0 dB GAIN MINIMUM INTERNAL INPUT MATCHING COMMON EMITTER CONFIGURATION DESCRIPTION: The SD1485 is a gold metallized epitaxial silicon NPN planar

SD1485

Abstract: "2-30 mhz"
Contextual Info: SD1485 RF & MICROWAVE TRANSISTORS TV/LINEAR APPLICATIONS Features • • • • • • 170 - 230 MHz 32 VOLTS POUT = 200 WATTS GP = 11.0 dB GAIN MINIMUM INTERNAL INPUT MATCHING COMMON EMITTER CONFIGURATION DESCRIPTION: The SD1485 is a gold metallized epitaxial silicon NPN planar

PBIT2119

Abstract: MTBF fit IGBT 1200 powerbox
Contextual Info: S TA N D A R D P O W E R S U P P L I E S & C U S T O M I S E D S O L U T I O N S POWERING PROGRESS The Powerbox Group S TA N D A R D The Powerbox Group Established in 1974 the Powerbox Group has successfully grown to be one of Europe’s leading suppliers

2sb504

Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Contextual Info: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle

MHP20S-100F

Contextual Info: 20W TO126 High Power Resistors MHP 20 S • Non-Inductive, Small, 20 Watt high power resistor. · TO-126 style package offering a very low thermal resistance of 5.9 °C/W. · Complete thermal flow design available for easy implementation. · Superior vibration durability.