200NF 50V Search Results

300nF CAPACITOR

Abstract: 150nf LC PI FILTER DESIGN 680nf 200nf capacitor Pi filter emi filter Varistor for 3KV 300nF SFJE
Contextual Info: EMI Filters – Quick Reference Guide SURFACE MOUNT SOLDER-IN THREADED FILTER RANGE DESCRIPTION CIRCUIT CAPACITANCE RANGE E01 EMI CHIP 3 TERMINAL CHIP, SIZES 0805,1206 & 1806 C 22pF - 200nF E07 EMI CHIP HIGH CURRENT EMI CHIP, SIZES 0805, 1206 & 1806 C 1nF - 200nF

y5p 3kv

Abstract: 330pF Y5F capacitor 270pF, 4KV 4.7nf 4kv y5u 2kv capacitors N1500 ceramic capacitor 100nF 50 y5v 3kv 47NF 500V 2.2nf 4kv
Contextual Info: Disc Ceramic Capacitors Selection Guide General Purpose Professional Application Voltage Capacitance dc CR (min.~ max.) Tolerance R isol Min. 25V 4.7nF 4.7nF 100nF 200nF ±20% / -20 + 50% -20 + 80% 1. 12 M Ω III 50V 4.7nF 4.7nF 100nF 100nF ±20% / -20 + 50%

5d 3kv

Abstract: CAPACITOR 5D 3KV 271 Ceramic Disc Capacitors CAPACITOR 5D "3KV" ceramic capacitor 1kV 6.8 nF capacitor 270pF, 4KV ceramic disc 68PF 50V 6LS AVX 821 ceramic capacitor capacitor 100nf 100v polyester
Contextual Info: A KYOCERA GROUP COMPANY TPC Disc Ceramic Capacitors Disc Ceramic Capacitors Selection Guide General Purpose Professional Application Voltage Capacitance dc CR (min.~ max.) Tolerance R isol Min. 25V 4.7nF 4.7nF 100nF 200nF ±20% / -20 + 50% -20 + 80% 1. 12 M Ω

Contextual Info: Surface3 Terminal MountEMIEMI Filters Chips E01 These 3 terminal chips are ideally suited for EMI suppression in digital circuits and other signal lines, and are available in 0805, 1206 and 1806 size. While the signal or dc current passes directly through the EMI

WE772

Abstract: AEC-Q200 BEADS FILTER SFCDP AEC-Q200 EMI FILTER 0.44 uF 250Vac AC capacitor SBSGP SFABL AN0018 MIL-STD-1560A 560nF-1
Contextual Info: Surface mount EMI filters Panel mount EMI filters Hermetic panel mount EMI filters EMI Power filters Special filters and assemblies Planar arrays Discoidal multilayer capacitors Varistor filters X2Y - Integrated Passive devices Filters for High-Rel applications

sbsgp

Abstract: ceramic disc 104 aec capacitors MIL-C-83513 Tubular Pi type capacitor military passive component SFssc AEC-Q200 BEADS FILTER semiconductor metal oxide varistor EN132400 varistor far 10k 150 AN0018
Contextual Info: Surface mount EMI filters Panel mount EMI filters Hermetic panel mount EMI filters EMI Power filters Special filters and assemblies Planar arrays Discoidal multilayer capacitors Varistor filters X2Y - Integrated Passive devices Filters for High-Rel applications

200nf 50V

Abstract: IC 1806 C 10NF 50V 100GOhms syfer 0805
Contextual Info: Surface3 Terminal MountEMIEMI Filters Chips E07 The high current 3 terminal chips are an extension to the Syfer 3 terminal EMI chip range, and are capable of carrying currents up to 2A. Suitable for use on DC lines on pcbs, they can prevent the radiation of interference emanating from high speed signal lines and

Contextual Info: Su k 3 Terminal EMI Chips E01 These 3 terminal chips are ideally suited for EMI suppression in digital circuits and other signal lines, and are available in 0805,1206 and 1806 size. W hile the signal or dc current passes directly through the EMI chip, unwanted noise is suppressed by the grounding of the high

200NF

Abstract: IC 1806 syfer e01 DB0805
Contextual Info: SurfaceHigh Mount EMI Filters Current 3 Terminal EMI Chips E07 The high current 3 terminal chips are an extension to the Syfer 3 terminal EMI chip range, and are capable of carrying currents up to 2A. Suitable for use on DC lines on pcbs, they can prevent the

Contextual Info: MULTILAYER C E R A M I C C A P A C I T O R S HIGH CURRENT EMI C H I P C A P A C I T O R S Syfer Technology has now introduced a high current version of its 3 terminal EMI chip. Capable of carrying up to 2 amps, it is particularly suitable for use on DC lines on PCBs. It can prevent the radiation of interference

1806

Contextual Info: Surface3 Terminal MountEMIEMI Filters Chips E01 These 3 terminal chips are ideally suited for EMI suppression in digital circuits and other signal lines, and are available in 0805, 1206 and 1806 size. While the signal or dc current passes directly through the EMI

C 10NF 50V

Abstract: 200nf 50V 22pf equivalent
Contextual Info: Surface3 Terminal MountEMIEMI Filters Chips E01 These 3 terminal chips are ideally suited for EMI suppression in digital circuits and other signal lines, and are available in 0805, 1206 and 1806 size. While the signal or dc current passes directly through the EMI

emi 0223

Abstract: 200nf 50V 200nf capacitor syfer 1206
Contextual Info: M U LT I L AY E R C E R A M I C C A P A C I T O R S HIGH CURRENT EMI C H I P C A P A C I T O R S Syfer Technology has now introduced a high current version of its 3 terminal EMI chip. Capable of carrying up to 2 amps, it is particularly suitable for use on DC lines on PCBs. It can prevent the radiation of interference

SSS4N80AS

Abstract: BVDSS
Contextual Info: SSS4N80AS Advanced Power MOSFET FEATURES BVDSS = 800 V Avalanche Rugged Technology RDS on = 3.0 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 2.8 A Improved Gate Charge Extended Safe Operating Area TO-220F Lower Leakage Current : 25 µA (Max.) @ VDS = 800V

psrs-7805lf

Abstract: 7805l 7812L smd transistor 5k 7815l 78xxL PME02-SERIES K-780 PSRS-7812LF k7805
Contextual Info: PSRS-78xxLF Mainzer Straße 151–153 D-55299 Nackenheim Tel. +49 6135 7026-0 Fax: +49 6135 931070 www.peak-electronics.de peak@peak-electronics.de PME02-SERIES Rev.09-2009 500 mA Switching Regulator Wide Input SMD Plastic Package Non-Isolated & Regulated

SSS4N80AS

Contextual Info: SSS4N80AS Advanced Power MOSFET FEATURES BVDSS = 800 V Avalanche Rugged Technology RDS on = 3.0 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 2.8 A Improved Gate Charge Extended Safe Operating Area TO-220F Lower Leakage Current : 25 µA (Max.) @ VDS = 800V

SSH10N60A

Contextual Info: SSH10N60A Advanced Power MOSFET FEATURES BVDSS = 600 V Avalanche Rugged Technology RDS on = 0.8 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 10 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max.) @ VDS = 600V

CMD4D11-470

Abstract: C3469 micromirror LBC2518470K LBC2518T470M LT1611 LT1616 LT3469 LT3469ETS8 LT346
Contextual Info: Final Electrical Specifications LT3469 Piezo Microactuator Driver with Boost Regulator May 2003 U FEATURES DESCRIPTIO Amplifier • Current Limit: ±40mA Typical ■ Input Common Mode Range: 0V to 10V ■ Output Voltage Range: 1V to V CC – 1V ■ Differential Gain Stage with High Impedance Output

Contextual Info: QFET N-CHANNEL FQA27N25 FEATURES BVDSS = 250V • Advanced New Design • Avanced Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 60nC Typ. • Extended Safe Operating Area

Contextual Info: Filter Type Feedthrough EMI Filter Datasheet SFDPP M8 x 0.75 – 6g Thread : 10.00mm Hexagonal Head Circuit Configuration Electrical Details Electrical Configuration Capacitance Measurement Current Rating Insulation Resistance (IR) Temperature Rating Ferrite Inductance (Typical)

AS3A

Abstract: SSS5N80A
Contextual Info: SSS5N80A Advanced Power MOSFET FEATURES BVDSS = 800 V Avalanche Rugged Technology RDS on = 2.2 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 3 A Improved Gate Charge Extended Safe Operating Area TO-220F Lower Leakage Current : 25 µA (Max.) @ VDS = 800V

emi ferrite pi filter

Abstract: 3 pin Ferrite Filter 200nf 200v PI FILTER SFDPP0500944MX
Contextual Info: Filter Type Feedthrough EMI Filter Datasheet SFDPP M8 x 0.75 – 6g Thread : 10.00mm Hexagonal Head Circuit Configuration Electrical Details Electrical Configuration Capacitance Measurement Current Rating Insulation Resistance (IR) Temperature Rating Ferrite Inductance (Typical)

SVD7N60F

Abstract: SVD7N60 SVD7n BVDSS VDS 30v ID70A svd7n60t 10vtD 7A SF TO-220-3L VDMOS
Contextual Info: SVD7N60T/SVD7N60F 7A 600V N 2 SVD7N60T/F N MOS TM S-Rin VDMOS 1 3 1. AC-DC H 2. 3. DC-DC PMW 1 ∗ 7A 600V RDS on ( 1 2 3 23 TO-220F-3L )=0.96Ω@VGS=10V TO-220-3L ∗ ∗ ∗ ∗ dv/dt SVD7N60T TO-220-3L SVD7N60T 50 / SVD7N60F TO-220F-3L SVD7N60F 50 / ( TC=25°C)

Piezo speaker crossover

Abstract: LTC1772B
Contextual Info: LT3469 Piezo Microactuator Driver with Boost Regulator FEATURES DESCRIPTIO Amplifier • Current Limit: ±40mA Typical ■ Input Common Mode Range: 0V to 10V ■ Output Voltage Range: 1V to V CC – 1V ■ Differential Gain Stage with High Impedance Output