SVD7N60F
Abstract: SVD7N60 SVD7n BVDSS VDS 30v ID70A svd7n60t 10vtD 7A SF TO-220-3L VDMOS
Contextual Info: SVD7N60T/SVD7N60F 7A 600V N 2 SVD7N60T/F N MOS TM S-Rin VDMOS 1 3 1. AC-DC H 2. 3. DC-DC PMW 1 ∗ 7A 600V RDS on ( 1 2 3 23 TO-220F-3L )=0.96Ω@VGS=10V TO-220-3L ∗ ∗ ∗ ∗ dv/dt SVD7N60T TO-220-3L SVD7N60T 50 / SVD7N60F TO-220F-3L SVD7N60F 50 / ( TC=25°C)
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svd7n60t/svd7n60fsvd7n60t/fo-220f-3lo-220-3l+10svd7n60tsvd7n60fsvd7n60svd7nbvdssvds 30v id70a10vtd7a sfto-220-3lvdmos
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SVD7N60F
Abstract: 7A600V VDS300V 600VVGS
Contextual Info: SVD7N60T/SVD7N60F 7A600V N沟道增强型场效应管 描述 2 SVD7N60T/F N沟道增强型高压功率MOS场效应晶体 管采用士兰微电子的S-RinTM平面高压VDMOS 工艺技术制 1 造。先进的工艺及条状的原胞设计结构使得该产品具有较
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svd7n60t/svd7n60f7a600vsvd7n60t/f7a600vrds+6o-220f-3lo-220-3lsvd7n60tsvd7n60fvds300v600vvgs
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SVD7N60F
Abstract: 7A SF 2TC2-5
Contextual Info: SVD7N60T/SVD7N60F 7A 600V N 2 SVD7N60T/F N MOS VDMOS 1 3 AC-DC H DC-DC 1. 2. 3. PMW 1 ∗ 7A 600V RDS on =1.2Ω@VGS=10V ∗ 1 23 23 TO-220F-3L TO-220-3L ∗ ∗ ∗ dv/dt SVD7N60T TO-220-3L SVD7N60T 50 / SVD7N60F TO-220F-3L SVD7N60F 50 / ( TC=25°C) SVD7N60T
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svd7n60t/svd7n60fsvd7n60t/fo-220f-3lo-220-3l+4svd7n60tsvd7n60f7a sf2tc2-5
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SVD7N60F
Abstract: TO-220F-3L
Contextual Info: SVD7N60T/SVD7N60F 7A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION These N-channel enhancement mode power field effect transistors are produced using Silan’ s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored
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svd7n60t/svd7n60fsvd7n60to-220-3l50unit/totes+3o-220f-3lsvd7n60fto-220f-3l
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SVD7N80F
Abstract: SVD7N80T SVD7N80 TO-220F-3L 7A800V SVD7n
Contextual Info: SVD7N80T/SVD7N80F 7A800V N沟道增强型场效应管 描述 2 SVD7N80T/F N沟道增强型高压功率MOS场效应晶体 管采用士兰微电子的S-RinTM平面高压VDMOS工艺技术制 1 造。先进的工艺及条状的原胞设计结构使得该产品具有较
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svd7n80t/svd7n80f7a800vsvd7n80t/f7a800vrds+7o-220f-3lo-220-3lsvd7n80tsvd7n80fsvd7n80to-220f-3lsvd7n
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