2000-23 K4 Search Results

XPC750

Abstract: Midland G9 Nippon capacitors
Contextual Info: MPC750EC/D Motorola Order Number 3/23/2000 REV. 2.2 Technical Data MPC750A RISC Microprocessor Hardware Specifications This document is primarily concerned with the MPC750, however, unless otherwise noted, all information here applies also to the MPC740. The MPC750 and MPC740 are

K4S641632D-TL1L

Contextual Info: SERIAL PRESENCE DETECT PC66 SODIMM PC66 SODIMM 144pin SPD Specification (64Mb D-die base) Rev. 0.2 May 2000 Rev 0.2 May. 2000 SERIAL PRESENCE DETECT PC66 SODIMM M466S0424DT0-L10, C10 • Organization : 4Mx64 • Composition : 4Mx16 *4 • Used component part # : K4S641632D-TL10, TC10

K4S281632C-TL1L

Abstract: M466S1723CT2-L1L M466S1723CT3-L1L
Contextual Info: SERIAL PRESENCE DETECT PC66 SODIMM PC66 SODIMM 144pin SPD Specification (128Mb C-die base) Rev. 0.1 May 2000 Rev 0.1 May 2000 SERIAL PRESENCE DETECT PC66 SODIMM M466S0924CT0-L1L, C1L • Organization : 8Mx64 • Composition : 8Mx16*4 • Used component part # : K4S281632C-TL1L, C1L

K4S560432B-TC75

Abstract: M390S6450BT1-C75 32MX72 64MX4 PC133 SDRAM registered DIMM 512MB samsung
Contextual Info: SERIAL PRESENCE DETECT PC133 Registered DIMM PC133 Registered SDRAM DIMM 168pin Type SPD Specification REV. 0 May. 2000 REV. 0 May. 2000 SERIAL PRESENCE DETECT PC133 Registered DIMM M390S3253BT1-C75 •Organization : 32MX72 •Composition : 32MX8 * 9ea •Used component part # : K4S560832B-TC75

7 segment display common anode T 5623

Abstract: numeric display HDSP 7 segment display 5621 142.PDF 7 SEGMENT DISPLAY 0.56" COMMON CATHODE
Contextual Info: 14.2 mm 0.56 inch Seven Segment Displays HDSP-K40x Series HDSP-550x Series HDSP-552x Series HDSP-560x Series HDSP-562x Series HDSP-570x Series HDSP-572x Series HDSP-H15x Series HDSP-H40x Series Technical Data Features • Industry Standard Size • Industry Standard Pinout

samsung date code

Abstract: 16MX64 sdram samsung
Contextual Info: SERIAL PRESENCE DETECT PC100 SODIMM PC100 SODIMM 144pin SPD Specification (256Mb B-die base) Rev. 0.1 Apr. 2000 Rev 0.1 Apr. 2000 SERIAL PRESENCE DETECT PC100 SODIMM M464S1654BT1-L1H/L1L, C1H/C1L • Organization : 8MX64 • Composition : 16MX16 *4 • Used component part # : K4S561632B-TL1H/TL1L,TC1H/TC1L

16MX64

Abstract: 8MX16
Contextual Info: SERIAL PRESENCE DETECT PC100 SODIMM PC100 SODIMM 144pin SPD Specification (128Mb M-die base) Rev. 0.1 February 2000 Rev 0.1 Feb. 2000 SERIAL PRESENCE DETECT PC100 SODIMM M464S0924MT1-L1H/L1L • Organization : 8MX64 • Composition : 8MX16 *4 • Used component part # : K4S281632M-TL1H/L1L

samsung dimm 128mb pc100 144pin

Abstract: 64Mb samsung SDRAM samsung date code 16MX64 8MX16
Contextual Info: SERIAL PRESENCE DETECT PC100 SODIMM PC100 SODIMM 144pin SPD Specification (128Mb C-die base) Rev. 0.1 Feb. 2000 Rev 0.1 Feb. 2000 SERIAL PRESENCE DETECT PC100 SODIMM M464S0924CT1-L1H/L1L, C1H/C1L • Organization : 8MX64 • Composition : 8MX16 *4 • Used component part # : K4S281632C-TL1H/L1L, C1H/C1L

K4S560832B

Abstract: RA12
Contextual Info: K4S560832B CMOS SDRAM 256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL Revision 0.2 May. 2000 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.2 May.2000 K4S560832B CMOS SDRAM Revision 0.1 March 10, 2000

Contextual Info: K4S641632D CMOS SDRAM 64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.2 May. 2000 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.2 May. 2000 K4S641632D CMOS SDRAM Revision History Revision 0.1 May 2000

K4S641632D

Contextual Info: K4S641632D CMOS SDRAM 64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.3 June 2000 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.3 June 2000 K4S641632D CMOS SDRAM Revision History Revision 0.1 May 2000

K4S561632B

Contextual Info: K4S561632B CMOS SDRAM 256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL Revision 0.2 May. 2000 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.2 May.2000 K4S561632B CMOS SDRAM Revision 0.1 March 10, 2000

K4S280832CNL

Contextual Info: shrink-TSOP K4S280832C-N CMOS SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM in sTSOP FEATURES GENERAL DESCRIPTION • JEDEC standard 3.3V power supply The K4S280832C-N is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 4,194,304 words by 8

Contextual Info: K4S641632E CMOS SDRAM 64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 Dec. 2000 * Samsung Electronics reserves the right to change products or specification without notice. Rev.0.0 Dec. 2000 K4S641632E CMOS SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM

K4S641633D-GN

Contextual Info: K4S641633D-GN96 CMOS SDRAM 4Mx16 SDRAM D-die, 3.0V, CSP Rev. 0.1 October, 2000 Rev. 0.1 Oct. 2000 K4S641633D-GN96 CMOS SDRAM Revision History Revision 0.0 September, 2000 - First published. Revision 0.1 (October, 2000) - Changed AC/DC test output load condition from 50pF to 30pF

K4S641633D-G

Abstract: K4S641633D
Contextual Info: K4S641633D-G CMOS SDRAM 4Mx16 SDRAM D-die, 3.0V, CSP Revision 0.1 December 2000 Rev. 0.1 Dec. 2000 K4S641633D-G CMOS SDRAM Revision History Version 0.0 October. 2000. Preliminary First generation based on 64Mb D-die. Version 0.1(Dec. 29. 2000) • Final Specification of 64Mb D-die

K4S643232E

Contextual Info: K4S643232E CMOS SDRAM 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL Revision 1.3 October 2001 Samsung Electronics reserves the right to change products or specification without notice. -1- Rev. 1.3 Oct. 2001 K4S643232E CMOS SDRAM Revision History

Contextual Info: K4-Antriebssysteme Genial vielseitig Ausgabe 2015-04 K4_Antriebssysteme_2015_4_D.indd 1 29.04.2015 14:59:48 Das Unternehmen ebm-papst Die ganze Welt der Luft- und Antriebstechnik: Das ist die Welt von ebm-papst. Über 11.700 Mitarbeiterinnen und Mitarbeiter – in aller Welt –

K4G323222A

Contextual Info: K4G323222A CMOS SGRAM 32Mbit SGRAM 512K x 32bit x 2 Banks Synchronous Graphic RAM LVTTL Revision 1.3 December 2000 Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.3 Dec. 2000 -1- K4G323222A CMOS SGRAM Revision History

Contextual Info: K4S643232E CMOS SDRAM 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL Revision 1.0 October 2000 Samsung Electronics reserves the right to change products or specification without notice. -1- Rev. 1.0 Oct. 2000 K4S643232E CMOS SDRAM Revision History

da53

Abstract: DB26 K4R881869M K4R881869M-NCK7 K4R881869M-NCK8
Contextual Info: Preliminary Direct RDRAM K4R881869M 288Mbit RDRAM 512K x 18 bit x 2*16 Dependent Banks Direct RDRAMTM Revision 0.9 January 2000 Page -1 Rev. 0.9 Jan. 2000 Preliminary Direct RDRAM™ K4R881869M Revision History Version 0.9 January 2000 - Preliminary - First Copy

K4D62323HA

Contextual Info: 64M DDR SDRAM K4D62323HA 64Mbit DDR SDRAM 512K x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL Revision 1.0 August 2000 Samsung Electronics reserves the right to change products or specification without notice. - 1 -

Contextual Info: Preliminary Direct RDRAM K4R271669A for Short Channel 128Mbit RDRAM 256K x 16 bit x 2*16 Dependent Banks Direct RDRAMTM Short Channel Revision 0.951 May 2000 Page -2 Rev. 0.951 May 2000 Preliminary Direct RDRAM™ K4R271669A for Short Channel Revision History

T29 marking

Abstract: e61 marking code T45 to DB9 DB26 Outline T39
Contextual Info: Direct RDRAM K4R271669A/K4R441869A 128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM Revision 1.02 January 2000 Page -1 Rev. 1.02 Jan. 2000 Direct RDRAM™ K4R271669A/K4R441869A Revision History Version 1.0 July 1999 - Preliminary