K4S641632D Search Results
K4S641632D Datasheets (8)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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K4S641632D |
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64Mbit SDRAM 1M x 16-Bit x 4 Banks Synchronous DRAM LVTTL | Original | 116.87KB | 11 | ||
K4S641632D-TC/L1H |
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1M x 16-Bit x 4 banks synchronous DRAM LVTTL. 64 Mbit SDRAM. Max freq. 100 MHz (CL=2), interface LVTTL. | Original | 116.86KB | 11 | ||
K4S641632D-TC/L1L |
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1M x 16-Bit x 4 banks synchronous DRAM LVTTL. 64 Mbit SDRAM. Max freq. 100 MHz (CL=3), interface LVTTL. | Original | 116.86KB | 11 | ||
K4S641632D-TC/L55 |
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1M x 16-Bit x 4 banks synchronous DRAM LVTTL. 64 Mbit SDRAM. Max freq. 183 MHz (CL=3), interface LVTTL. | Original | 116.86KB | 11 | ||
K4S641632D-TC/L60 |
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1M x 16-Bit x 4 banks synchronous DRAM LVTTL. 64 Mbit SDRAM. Max freq. 166 MHz (CL=3), interface LVTTL. | Original | 116.86KB | 11 | ||
K4S641632D-TC/L70 |
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1M x 16-Bit x 4 banks synchronous DRAM LVTTL. 64 Mbit SDRAM. Max freq. 143 MHz (CL=3), interface LVTTL. | Original | 116.86KB | 11 | ||
K4S641632D-TC/L75 |
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1M x 16-Bit x 4 banks synchronous DRAM LVTTL. 64 Mbit SDRAM. Max freq. 133 MHz (CL=3), interface LVTTL. | Original | 116.86KB | 11 | ||
K4S641632D-TC/L80 |
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1M x 16-Bit x 4 banks synchronous DRAM LVTTL. 64 Mbit SDRAM. Max freq. 125 MHz (CL=3), interface LVTTL. | Original | 116.86KB | 11 |
K4S641632D Price and Stock
Samsung Semiconductor K4S641632D-TC10000 |
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K4S641632D-TC10000 | 94 |
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Samsung Electro-Mechanics K4S641632D-TC1HIC,SDRAM,4X1MX16,CMOS,TSOP,54PIN,PLASTIC |
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K4S641632D-TC1H | 608 |
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Samsung Electronics Co. Ltd K4S641632DTC80Electronic Component |
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K4S641632DTC80 | 255 |
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Samsung Semiconductor K4S641632DTC1LTM0Electronic Component |
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K4S641632DTC1LTM0 | 151 |
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Samsung Electronics Co. Ltd K4S641632DTC75Electronic Component |
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K4S641632DTC75 | 17 |
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K4S641632D Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: K4S641632D CMOS SDRAM 64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.2 May. 2000 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.2 May. 2000 K4S641632D CMOS SDRAM Revision History Revision 0.1 May 2000 |
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K4S641632D 64Mbit 16Bit K4S280432C-TC75/TL75 A10/AP | |
Contextual Info: K4S641632D CMOS SDRAM 64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 June 1999 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.0 Jun. 1999 K4S641632D CMOS SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM |
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K4S641632D 64Mbit 16Bit A10/AP | |
K4S641632DContextual Info: K4S641632D CMOS SDRAM 64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.3 June 2000 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.3 June 2000 K4S641632D CMOS SDRAM Revision History Revision 0.1 May 2000 |
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K4S641632D 64Mbit 16Bit K4S280432C-TC75/TL75 K4S641632D A10/AP | |
K4S641632D-TL1LContextual Info: SERIAL PRESENCE DETECT PC66 SODIMM PC66 SODIMM 144pin SPD Specification (64Mb D-die base) Rev. 0.2 May 2000 Rev 0.2 May. 2000 SERIAL PRESENCE DETECT PC66 SODIMM M466S0424DT0-L10, C10 • Organization : 4Mx64 • Composition : 4Mx16 *4 • Used component part # : K4S641632D-TL10, TC10 |
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144pin) M466S0424DT0-L10, 4Mx64 4Mx16 K4S641632D-TL10, 000mil 4K/64ms 128bytes 256bytes 66MHz K4S641632D-TL1L | |
K4s641632d-tl1h
Abstract: 4MX16
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PC100 144pin) M464S0424DT1-L1H/L1L, 4MX64 4MX16 K4S641632D-TL1H/L1L, 4K/64ms 100MHz K4s641632d-tl1h 4MX16 | |
M366S0824ET0
Abstract: M366S0824ET0-C1H M366S0824ET0-C1L
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PC100 M366S0824ET0 M366S0824ET0 8Mx64 4Mx16, 400mil 168-pin M366S0824ET0-C1H M366S0824ET0-C1L | |
VOGT n3 503 20 010 50Contextual Info: HFC - S active ISDN Microprocessor ARM7 based Preliminary Data Sheet: July 2002 Copyright 1994 - 2002 Cologne Chip AG All Rights Reserved The information presented can not be considered as assured characteristics. Data can change without notice. Parts of the information presented may be protected by patent or other rights. |
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Contextual Info: M366S0424DTS PC100 Unbuffered DIMM M366S0424DTS SDRAM DIMM 4Mx64 SDRAM DIMM based on 4Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M366S0424DTS is a 4M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung |
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M366S0424DTS PC100 M366S0424DTS 4Mx64 4Mx16, 400mil 168-pin | |
Contextual Info: M464S0424DT1 PC100 SODIMM M464S0424DT1 SDRAM SODIMM 4Mx64 SDRAM SODIMM based on 4Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M464S0424DT1 is a 4M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung |
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M464S0424DT1 M464S0424DT1 PC100 4Mx64 4Mx16, 400mil 144-pin | |
IEC-61937
Abstract: 1024k x 8 bits fifo Video Frame ATSC MPEG TS 656 samsung i2s SQFP208 SAA6752HS SCR Handbook filter SCR PIN CONFIGURATION picture BSS83 "direct replacement"
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SAA6752HS SCA76 R04/03/pp71 IEC-61937 1024k x 8 bits fifo Video Frame ATSC MPEG TS 656 samsung i2s SQFP208 SAA6752HS SCR Handbook filter SCR PIN CONFIGURATION picture BSS83 "direct replacement" | |
Contextual Info: SERIAL PRESENCE DETECT PC100 Unbuffered DIMM PC100 Unbuffered DIMM 168pin 4Layer SPD Specification(64Mb D-die base) Rev. 0.1 Jan. 2000 Rev 0.1 Jan. 2000 SERIAL PRESENCE DETECT PC100 Unbuffered DIMM M366S0424DTS-C80/C1H/C1L ¡Ü ¡Ü ¡Ü ¡Ü ¡Ü ¡Ü ¡Ü |
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PC100 168pin) M366S0424DTS-C80/C1H/C1L 4Mx64 4Mx16 K4S641632D-TC80/ 000mil 4K/64ms | |
M464S0424DT1Contextual Info: M464S0424DT1 PC100 SODIMM M464S0424DT1 SDRAM SODIMM 4Mx64 SDRAM SODIMM based on 4Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M464S0424DT1 is a 4M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung |
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M464S0424DT1 PC100 M464S0424DT1 4Mx64 4Mx16, 400mil 144-pin | |
M366S0824DT0
Abstract: M366S0824DT0-C1H M366S0824DT0-C1L M366S0824DT0-C80
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PC100 M366S0824DT0 M366S0824DT0 8Mx64 4Mx16, 400mil 168-pin M366S0824DT0-C1H M366S0824DT0-C1L M366S0824DT0-C80 | |
M366S0424ETS
Abstract: M366S0424ETS-C1H M366S0424ETS-C1L
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M366S0424ETS PC100 M366S0424ETS 4Mx64 4Mx16, 400mil 168-pin M366S0424ETS-C1H M366S0424ETS-C1L | |
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M366S0924CTS-C7A
Abstract: M366S1723CTS-C7A K4S640832D-TC75 M366S0823DTS-C7A M374S0823DTS-C7A K4S281632B-TC75
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PC133 168pin) M366S0424DTS-C7A 4Mx64 4Mx16 K4S641632D-TC75 000mil 4K/64ms M366S0924CTS-C7A M366S1723CTS-C7A K4S640832D-TC75 M366S0823DTS-C7A M374S0823DTS-C7A K4S281632B-TC75 | |
M464S1724CT2-L75
Abstract: M464S3254BT2-L75 sdram pcb gerber m464s1654* samsung M464S3254BT2 K4S561632A
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PC133 144pin M464S0424DT2-L75/C75 M464S0424ET2-L75/C75 M464S0824DT2-L75/C75 M464S0824ET2-L75/C75 M464S0924BT2-L75/C75 M464S1724CT2-L75 M464S3254BT2-L75 sdram pcb gerber m464s1654* samsung M464S3254BT2 K4S561632A | |
m464s16* samsung
Abstract: pc66 march 1999
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PC133 144pin) byte62) 128Mb C-die/256Mb M464S0424CT1-L75/C75 M464S0424DT1-L75/C75 m464s16* samsung pc66 march 1999 | |
ubicom ip3023
Abstract: IP3023 IP3K-DDS-002 PA168 ubicom ip3023 debug samsung datecode BCPE4 PG310 IP3023BG228250
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IP3023TM 32-bit IP3023 IP2000, IP3023, ubicom ip3023 IP3K-DDS-002 PA168 ubicom ip3023 debug samsung datecode BCPE4 PG310 IP3023BG228250 | |
VOGT L5 503
Abstract: lcd2x16 29w160 RTL8019AS applications note 81F161622B 164 20 8525 GPI 152 3013 MAX232 to rj45 RTL8019AS u3 503 10 010 00 vogt
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GPIO11R GPIO15R GPIO14R GPIO17 VOGT L5 503 lcd2x16 29w160 RTL8019AS applications note 81F161622B 164 20 8525 GPI 152 3013 MAX232 to rj45 RTL8019AS u3 503 10 010 00 vogt | |
M466S0824DT2-L1LContextual Info: M466S0824DT2 PC66 SODIMM M466S0824DT2 SDRAM SODIMM 8Mx64 SDRAM SODIMM based on 4Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M466S0824DT2 is a 8M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung |
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M466S0824DT2 M466S0824DT2 8Mx64 4Mx16, 400mil 144-pin M466S0824DT2-L1L | |
samsung i2s
Abstract: SQFP208 SQFP-208 pcr 601 SCR Handbook filter mpeg-2 buffer read clock recorder multiplexer SCR PIN CONFIGURATION picture CC625 Samsung digital dts dolby 5.1 ic
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SAA6752HS SCA74 753504/02/pp72 samsung i2s SQFP208 SQFP-208 pcr 601 SCR Handbook filter mpeg-2 buffer read clock recorder multiplexer SCR PIN CONFIGURATION picture CC625 Samsung digital dts dolby 5.1 ic | |
SO-DIMM 144-pin
Abstract: HSD8M32B4 HSD8M32B4-10 HSD8M32B4-10L HSD8M32B4-12
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HSD8M32B4 32Mbyte 32-Bit 144pin 4Mx16, HSD8M32B4 144-pin, SO-DIMM 144-pin HSD8M32B4-10 HSD8M32B4-10L HSD8M32B4-12 | |
Contextual Info: M466S0424DT0 PC66 SODIMM M466S0424DT0 SDRAM SODIMM 4Mx64 SDRAM SODIMM based on 4Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M466S0424DT0 is a 4M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung |
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M466S0424DT0 M466S0424DT0 4Mx64 4Mx16, 400mil 144-pin | |
k4s641632d-tc80
Abstract: samsung date code sAMSUNG PC100-322-620
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PC100 168pin) M366S0824DT0-C80/C1H/C1L 8Mx64 4Mx16 K4S641632D-TC80/ 375mil 4K/64ms k4s641632d-tc80 samsung date code sAMSUNG PC100-322-620 |