2.L A6 Search Results

MBM29LV200B

Contextual Info: FLASH MEMORY B l I l i 2M 256K x 8/128K x 16 BIT M B M 2 9 L V 2 0 0 T - 12- x / M B M 2 9 L V 2 0 0 B - 12- x

Contextual Info: MITSUBISHI LSIs M 5 M 5 2 5 6 C F P , V P , R V - 1 2 V L - 1 2 V X L . - 1 L , - 1 5 V 5 V L L X , L 262144-BIT 32768-WORD BY 8-BIT CM0S STATIC RAM DESCRIPTION This M5M5256CFP, VP, RV is a 2 6 2 1 4 4 -bit CMOS static RAMs organized as 3 2 7 6 8 -w o rd s by 8 - bits which is

Contextual Info: bSH^ñSS 0 Q 2 M 2 MLj M 5 M 177 • 5 2 5 6 C M IT I F P M ITS U B IS H ILS ls , V P , R V - 1 2 V L - 1 2 V L X , - 1 5 V L , - 1 5 V L L X , L 262144-BIT 32768-WORD BY 8-BIT CM0S STATIC RAM DESCRIPTION This M 5M 5256C FP, VP, RV is a 2 6 2 1 4 4 - bit CMOS static

Contextual Info: FLASH MEMORY B l I l i 4 M 512 K x 8/256 K x 16 BIT M B M 2 9 L V 4 0 0 T -1 o - 1 2 / M B M 2 9 L V 4 0 0 B -1 0 - 1 2

6724

Abstract: B754 87424
Contextual Info: O K I SEMI CONDUCTOR GROUP ö l D E § t>7242MD ; ,6 7 2 4 2 4 0 O K I SEMICONDUCTOR GROUP . 89D 0 2 7 3 4 D 7 L ¥ £ '2 3 '/7 l l l k l s e m i c o n d u MSC2310YS9/KS9 c t o 0DDB73M r _ _ 1,048,576 BY 9 BIT DYNAMIC RAM MODULE

Contextual Info: MITSUBISHI LS Is SRAM MODULE M H 1 M 0 9 A N - 8 5 L ,- 1 0 L ,- 1 2 L ,- 1 5 L ,- 8 5 H ,- 1 0 H ,- 1 2 H ,- 1 5 H M H 1 M 0 9 A N Z - 8 5 L ,- 1 0 L r / 1 2 L ,- 1 5 L ,- 8 5 H ,- 1 0 H ,- 1 2 H ,- 1 5 H 9437184-BIT (1048576-WORD BY 9-BIT) CMOS STATIC RAM

Contextual Info: HYMD132G7254-H/L 32Mx72 DDR SDRAM Registered DIMM S ER IA L P R E S E N C E D E T E C T Bin Sort : K D D R 2 6 6 A @ C L = 2 , H (D D R 2 6 6 B C L = 2 .5 ), L (D D H 2 O O 0 C L = 2 ) Function Supported B yte# Hexa Value Note Function Description K Nu m b er of Bytes written into serial m em ory at module

Contextual Info: HYMD116M645A6-K/H/L 16Mx64 DDR Unbuffered SO-DIMM SERIAL PRESENCE DETECT Bin Sort : K D D R 2 6 6 A 0 C L = 2 , H (D O R 2 6 6 B @ C L = 2 .5 ), L (D D R 2 0 0 « C L = 2 ) Function Supported Byte# Hexa Value Function Description Note K N u m b e r of Bytes w ritte n in to s e ria l m e m o ry a t m odule

74LS TTL

Contextual Info: TMS4764 8192-WORD BY 8-BIT READ ONLY MEMORY JUNE 1981 - 8 1 9 2 X 8 Organization N PAC KAG E Fully Static No Clocks, No Refresh (TOP VIEW) REVISED NOVEMBER 19B5 A7 C 1 L>24 D v ec 23 D A 8 A6 C 2 22 D A 9 A5 L 3 21 2 A 1 2 A4 L 4 All Inputs and Outputs TTL Compatible

8L 05

Abstract: M2V64S20DTP M2V64S20DTP-6 M2V64S30DTP M2V64S30DTP-6 M2V64S40DTP M2V64S40DTP-6 57bword bbit
Contextual Info: MITSUBISHI LSis „ SDRAM Rev.3.0 M 2 V 6 4 S 2 0 D T P -6 ,-6 L ,-7 ,-7 L ,-8 ,-8 L M 2 V 6 4 S 3 0 D T P -6 ,-6 L ,-7 ,-7 L ,-8 ,-8 L M 2 V 6 4 S 4 0 D T P -6 ,-6 L ,-7 ,-7 L ,-8 ,-8 L (4 - b a n k x 4 ,1 9 4 ,3 0 4 -w o rd x 4 - b it) (4-BANK x 2,097,152-W O RD x

Contextual Info: FLASH MEMORY B l I l i i 4M 512K x 8/256K x 16 BIT M B M 2 9 L V 4 0 0 T - 12 - x / M B M 2 9 L V 4 0 0 B - 1 2 -x

CXK58257ATM

Abstract: CXK58257 SSTA14
Contextual Info: SONY» CXK58257ATM/A YM J o L u l ö L L / V o L L / l 2 L L Advance Information 32768-word X 8-bit High Speed CMOS Static RAM Description C X K 5 8 2 5 7 A T M /A Y M is a 256K bits, 3 2 ,768 w o rds by 8 bits, CMOS sta tic RAM. It is suitable fo r portable and ba tte ry back-up

Contextual Info: HYMD132645A8-K/H/L 32Mx64 Unbuffered DDR SDRAM DIMM PRELIMINARY SERIAL PRESENCE DETECT Bin Sort : K D D R 2 6 6 A » C L = 2 , H (D D R 2 6 6 B @ C L = 2 .5 ), L (D D H 2 0 0 C L=2) Function Supported Byte# Note K H e x a V a lu e F u n c tio n D e s c rip tio n

Contextual Info: bE M 'iö E S 0 0 2 4 Elöfi M 5 M b5 b • 5 1 l'IIT l 8 A F MITSUBISHILSIs P , V P , R V - - 1 1 2 2 V V L L L , , - 1 - 5 1 5 V L V L , L 1048576-BIT 131072-WORD BY 8-BIT CM0S STATIC RAM DESCRIPTION The M5M51008AFP, VP, RV are a 1048576-bit CMOS static

XC2300

Abstract: srx 2039 L-12 L-13 XC2000 100CHN MCMP50 ICL Logic
Contextual Info: U s e r ’ s Ma n u a l , V 2 . 0 , D e c . 2 0 0 7 XC2300 Derivatives 1 6 / 3 2 - B i t S i n g l e -C h i p M i c r o c o n t r o l l e r w i t h 32-Bit Performance V o l u m e 2 o f 2 : P e r i p h e r a l U n i t s M i c r o c o n t r o l l e rs Edition 2007-12

XC2700

Abstract: srx 2039 L-12 L-13 XC2000 ICL Logic T4AS
Contextual Info: U s e r ’ s Ma n u a l , V 2 . 0 , D e c . 2 0 0 7 XC2700 Derivatives 1 6 / 3 2 - B i t S i n g l e -C h i p M i c r o c o n t r o l l e r w i t h 32-Bit Performance V o l u m e 2 o f 2 : P e r i p h e r a l U n i t s M i c r o c o n t r o l l e rs Edition 2007-12

xc-2200

Abstract: srx 2039 T4AS L-12 L-13 XC2000 UxCy_RBUF spi 216hx ICL Logic T12HRD
Contextual Info: U s e r ’ s Ma n u a l , V 2 . 0 , D e c . 2 0 0 7 XC2200 Derivatives 1 6 / 3 2 - B i t S i n g l e -C h i p M i c r o c o n t r o l l e r w i t h 32-Bit Performance V o l u m e 2 o f 2 : P e r i p h e r a l U n i t s M i c r o c o n t r o l l e rs Edition 2007-12

Contextual Info: HYMD116645A8-K/H/L 16UX64 DDR SDRAM Unbuffered DIMM SERIAL PRESENCE DETECT Bin Sort : K D D R 266A @ C L=2 , H (D D R 2 6 6 B @ C L = 2 .5 ), L(D D R 200@ C L =2) Function Supported Hexa Value Function Description s $ t*# H K Nu m b er o f Bytes w ritten into serial m em ory a t m odule

SN54LS640

Abstract: SN54LS642 SN54LS644 SN54LS645 SN74LS640 SN74LS642 SN74LS644 SN74LS645 texas instruments of ic 74 ls 83 D2420
Contextual Info: S N 5 4 L S 6 4 0 THRU S N 5 4 L S 6 4 2 , S N 5 4 L S 6 4 4 , S N 5 4 L S 6 4 5 S N 7 4 L S 6 4 0 THRU S N 7 4 L S 6 4 2 , S N 7 4 L S 6 4 4 , S N 7 4 L S 6 4 5 OCTAL BUS TRANSCEIVERS SDLS189 D 2 4 2 0 . A P R IL 1 9 7 9 —REVISED M AR C H 198B SN54LS' . . . J PACKAGE

TF8J

Abstract: LC324256 ZIP20 lm 3415 sanyo 905 kass SOJ26 z1012 1CC5 AM/MSP 34152
Contextual Info: A /O . ^ 34 I 5A E < *f f l j f t - n. - X N o ^ 3 4 15 ¿ £ U X < m m m ^ - = L - x 6250 Oo CMOS L S I 1M fc í> y M íf* - $ - y $ í* A M L C 3 2 4 2 5 6 J , Z - 1 0 / 1 2 " 2 5 6 K x 4 t : V M | íá t j ¡ « •K N'Í^ é ;i ,;í « s* L C 3 2 4 2 5 6 J ,2 '> V -X (S . 2 6 2 1 4 4 0 - K X 4 t v

Contextual Info: IBM0364404C Preliminary IBM0364804C IBM0364164C IBM03644B4C 64Mb Synchronous DRAM - Die Revision B Features • Programmable Wrap Sequence: Sequential or Interleave • High Performance: -2 2 2 , C L = 3 I -32 2, C L = 3 I -10 , C L = 3 125 I 125 I 100 fcK i Clock Frequency

Mil-Std-883 Wire Bond Pull Method 2011

Abstract: T5C6408
Contextual Info: M I CR ON T E C H N O L O G Y INC b l l l S H T O O D S Ô ? ^ T1S SS E D MICRON MRN M T5C6408 DIE 8K X 8 S R A M ^ r-a u -7 ^ -i7 MILITARY SRAM DIE 8K X 8 SRAM FEATURES DIE OUTLINE Top View OPTIONS 3 3 3 2 2 2 2 2 2 2 2 2 2 2 1 0 9 8 7 6 5 4 3 2 1 0 □□□□□□□□□□□□a

TC518128

Abstract: tc518128cfl80 TC518128CFL-80 cfl circuit diagrams TC518128CFL-70
Contextual Info: INTEGRATED TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT CIRCUIT TC 5 1 8 1 2 8 C P L /C S P L /C F L / CFWL / CFTL - 7 0 , TC 5 1 8 1 2 8 CPL / CSPL / CFL / CFWL / CFTL - 8 0 TC 5 1 8 1 2 8 CPL / C S PL/ CFL / CFWL / CFTL - 1 0 , TC 5 1 8 1 2 8 CPL/ CSPL / CFL/ CFW L/ CFTL - 7 0 L

DQ11m

Contextual Info: 16 0 S 5 - L _ S 5 H- L 7 / 1 5 / 9 8 7 : 4 2 PM P age 1 LH28F160S5-L/S5H-L SHARP LH28F160S5-L/S5H-L 16 M-bit 2 MB x 8/1 MB x 16 Smart 5 Flash Memories (Fast Programming) DESCRIPTION The LH 28F160S 5-L/S5H -L flash m em ories with High performance read access time