T5C6408 Search Results

Mil-Std-883 Wire Bond Pull Method 2011

Abstract: T5C6408
Contextual Info: M I CR ON T E C H N O L O G Y INC b l l l S H T O O D S Ô ? ^ T1S SS E D MICRON MRN M T5C6408 DIE 8K X 8 S R A M ^ r-a u -7 ^ -i7 MILITARY SRAM DIE 8K X 8 SRAM FEATURES DIE OUTLINE Top View OPTIONS 3 3 3 2 2 2 2 2 2 2 2 2 2 2 1 0 9 8 7 6 5 4 3 2 1 0 □□□□□□□□□□□□a

Contextual Info: I^ICRQN 8K SRAM T5C6408 X 8 SRAM 8K X 8 SRAM PIN ASSIGNMENT Top View • H ig h sp eed : 9 , 1 0 ,1 2 , 1 5 , 20 an d 25n s • H ig h -p e rfo rm a n ce, lo w -p o w er, C M O S d o u b le-m eta l p ro cess • Sin g le + 5 V ± 1 0 % p o w er su p p ly _

Contextual Info: niCRON TECHNOLOGY INC 5SE D blllSMT 0 0 0 3 4 l4fl “133 I^ IC R O N 8K urn M T5C 6408 X 8 S R AM •4 > -Z V I2 _ SRAM 8K X 8 SRAM • High speed: 8*, 10,12,15,20 and 25ns • High-performance, low-power, CMOS double-metal process • Single +5V ±10% power supply

5C6408

Abstract: 1293-D
Contextual Info: OBSOLETE 8/31/94 MICRON I T5C6408 8K x 8 SRAM SEMICONDUCTOR, INC. SRAM 8K x 8 SRAM FEATURES PIN ASSIGNMENT Top View • H igh speed: 9 ,1 0 ,1 2 ,1 5 ,2 0 and 25ns • H igh-perform ance, low -pow er, CM OS double-m etal process • Single +5V +10% pow er supply