B754 Search Results

MSM511665-10

Abstract: MSM511665-80
Contextual Info: 5ÔE D O K I m b754240 0012^40 SEMICONDUCTOR 3^7 « O K I J GROUP O K I sem iconductor M SM 511665 z^s-H 65,536-W O R D x 16-BIT DYN A M IC RAM GENERAL DESCRIPTION The M SM511665 is a new generation dynamic RAM organized as 65,536 words x 16 bits. The technology used to fabricate the MSM511665 is OKI's CMOS silicon gate process technology.

4 digits 12-segment led display

Contextual Info: O K I SEMICONDUCTOR GROUP 23E D • b75424D DODbSSS b O K I semiconductor_ MSC7110-XX/ MSC7112-xx_ 12-SEGMENT, 16-DIGIT/ 16-SEGMENT, 12-DIGIT GENERAL DESCRIPTION The MSC7110-xx and MSC7112-xx are general purpose display controllers for vacuum fluorescent

MAX184

Abstract: MAX525 MSM27C256HZB
Contextual Info: 5ÖE D • b754240 O K I O K I s e m GG1333b BbO H O K I J SEM ICONDUCTOR GROUP ic o n d u c to r - r - ^ / s - a s " MSM27C256HZB 32,768-Word x 8-Bit ONE TIME PROM GENERAL DESCRIPTION The MSM27C256HZB is a 32,768-word x 8-bit electrically programmable read-only memory.

MSM411001-10RS

Abstract: MSM411001-12RS
Contextual Info: O K I S EM I CO ND U CT OR GROUP ûi 6724240 0 K I SEM IC O N D U C TO R GROUP _ O K I D É b754S4D □OOSSTS 3 89D 0 2 5 9 2 D 7 - V i -¿ > 3 - / s ' _ semiconductor MSM4 1 1 0 0 1 RS_ 1,048,576-BIT DYNAMIC RANDOM ACCESS MEMORY < Nibble Mode Type >

ST4540

Abstract: MSC7701
Contextual Info: O K I S E MI C OND U C T OR GROUP E3E D • b7542M0 OOOLiMBD 5 ■ T " - 5 2 - I3 > '°j O O K I semiconductor_ ;_ MSC7701 Underdevelopm ent 40-BIT GRID DRIVER GENERAL DESCRIPTION The MSC7701 is a monolithic 1C using the high withstand voltage driver process for hybridizing

thermistor resistance

Contextual Info: O K I SEMICONDUCTOR GROUP b75424ü 0006010 7 EBE D T-4T-07 1.3/im Edge-Emitting LED DIP Module OE352G-001,OE352G-002,OE352G-004 • DESCRIPTION OKI OE352G series are 1.3//m edge-emitting LED DIP modules with single mode fiber pigtail. Using the OKI EE-LED which features high coupling efficiency, single mode fiber output over 40/MI

T-46-23-18

Abstract: N-3715 msc23408 msc2340-xxys9
Contextual Info: i 4bE D • b75424D 000^724 61Ô « 0 K I J O K I SEMICO ND U CT OR GROUF O K I semiconductor_ M S C 2 3 4 0 - X X Y S 9 / K S 9 _ T - V é - Z I - t f 4,194.304 Word x 9 Bit DYNAMIC RAM MODULE: FAST PAGE MODE TYPE GENERAL DESCRIPTION

Contextual Info: O K I SEMICONDUCTOR GROUP 23E D • b7545M0 0 0 0 7 ^ 4 4 ■ • DESCRIPTION OKI OL250A and O L 28 OA are 1.2/mi InGaAsP/lnP laser diode DIP modules with single mode and multimode fiber pigtail, respectively. These modules are optimum light |sources for long distance high bit rate

Contextual Info: 4bE 1 m b754240 0011635 445 H O K I J O K I semiconductor_ t-sz - i3-o r MSM6568 OKI SEMICONDUCTOR GROUP LCD Dot Matrix Common Driver TAB GENERAL DESCRIPTION The MSM6568 is a LCD dot matrix common driver of a CMOS 1C which consists of a 160-bit

MSC2321A-80YS18

Abstract: MSC2331A-10YS18 001035
Contextual Info: OKI 4bE D • b75424D 0010352 Ô31 * O K I J sem ico n d u cto r_ MSC2321A-XXYS18 O K I S E H I C 0 N D U C T 0 R GROUP 524,288 Word BY 36 Bit DYNAMIC RAM MODULE : FAST PAGE MODE TYPE GENERAL DESCRIPTION The Oki MSC2321A-xxYS18 is a fully decoded, 524,288 word x 32 bit CMOS dynamic random access

LED BARGRAPH pin configuration

Abstract: 093S b7am display 16 segments 16-SEGMENT 4 digits 7-segment led display cl
Contextual Info: O K I S E MI C O N D U C T O R GROUP 23E D • b75424D DODbSSS b O K I semiconductor_ MSC7110-XX/ MSC7112-xx_ 12-SEGMENT, 16-DIGIT/ 16-SEGMENT, 12-DIGIT GENERAL DESCRIPTION The M SC 7 11 0-xx and M SC 7 11 2-xx are general p urpose display controllers for vacuum fluorescent

MSM5116160

Abstract: dq8e N4409
Contextual Info: O K I Semiconductor MSM5116160 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5116160 is a 1,048,576-word x 16-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM5116160 achieves high integration, high-speed operation, and low -pow er

transistor sl 431

Abstract: ZIP40-P-475
Contextual Info: O K I Sem iconductor M S M 5 1 4 1 9 0 / S L _ 262,144-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM514190/SL is a new generation Dynamic RAM organized as 262,144-word x 18-bit configuration. The technology used to fabricate theMSM51419 0 /SL is OKI's CMOS silicon gate process technology.

OCV CM 1092

Abstract: SP 1191 MSM6576
Contextual Info: O K I Semiconductor MSM6576-XX_ Operatable at 0.9V and 7-level Detector 4-Bit Microcontroller GENERAL DESCRIPTION M SM 6576 is a 4-bit, low -pow er m icrocontroller that is manufactured in a C M O S silicon-gate process. The m icrocontroller can be started and operated at a low supply voltage of 0.9 V.

MSM64162-XXX

Abstract: MSM64162 sis 496 Ml17
Contextual Info: O K I Semiconductor M S M 6 4 1 6 2 _ Built-in RC Oscillator type A/D Converter and LCD Driver 4-Bit Microcontroller GENERAL DESCRIPTION The M SM 64162 is a low pow er 4-bit m icrocontroller using O K I original C P U core n X -4 /2 0 . The M SM 64162 has the m inim u m instruction execution tim e o f 7.5 |is @ 400 kH z and has

active suspension

Abstract: m56v16 m56v1640010
Contextual Info: O K I Semiconductor MSM56V16400 2-Bank x 2,097,152-Word x 4-Bit SYNCHRONOUS DYNAMIC RAM DESCRIPTION The MSM56V16400 is a 2-bank x 2,097,152-w ord x 4-bit synchronous dynam ic RAM, fabricated in OKI's CMOS silicon gate process technology. The device operates at 3.3 V. The inputs and

MSM531021B

Contextual Info: O K I Semiconductor M SM 531021B 131,072-Word x 8-Bit Mask ROM DESCRIPTION i S ^ M 5310218 is a high-speed silicon gate CMOS Mask ROM with 131,072-word x 8-bit capacity. The MSM531021B operates on a single 5.0 V power supply and is TTL compatible. The chip's asynchro­

Contextual Info: O K I Semiconductor MSM5 1 V1 7 1 6 0 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE D ESCR IPTIO N The MSM51V17160 is a 1,048,576-word x 16-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM51V17160 achieves high integration, high-speed operation, and low-power

MSM511000

Abstract: ZIP20-P-400 msm511000h
Contextual Info: O K I Semiconductor MSM5 1 1 0 0 0 H_ _ 1,048,576-W ord x 1-Bit D Y N A M IC R A M : FA ST P A G E M O D E T Y P E D ESCRIPTIO N The MSM511000H is a 1,048,576-word x 1-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM511000H achieves high integration, high-speed operation, and low-power

Piezo sounder

Abstract: TONE/VOLUME CONTROL CIRCUIT MSM6895 MSM7502 MSM7502GS-BK MSM7543 RM01
Contextual Info: O K I Semiconductor MSM7502 Multi-Function PCM CODEC G E N E R A L D E S C R IP T IO N The M SM 7502, developed especially for low -pow er and m ulti-function applications in touch­ tone telephone sets and digital telephone term inals o f digital PBXs, is a single +5 V pow er supply

T02I

Abstract: 26-PIN ZIP20-P-400 514100B
Contextual Info: O K I Semiconductor MSM5 1 4 1 OOB/BL 4,194,304-Word x 1-Bit DYNAMIC RAM: FAST PAGE MODE TYPE DESCRIPTION The MSM514100B/BL is a new generation dynamic RAM organized as 4,194,304-word x 1-bit. The technology used to fabricate the MSM514100B/BL is OKI's CMOS silicon gate process technology.

M66507

Abstract: 66P507 MARK A03 MSM66507 41BW-10
Contextual Info: O K I Semiconductor MSM66507/66P507 OLM S-66K Series 16-Bit Microcontroller GENERAL DESCRIPTION The M SM66507/66P507 is a high-performance 16-bit microcontroller that employs OKI original nX-8/500 CPU core. The MSM66507/66P50 7 includes a 16-bit CPU, ROM, RAM, a 10-bit A /D converter, serial ports,

MH17154

Abstract: UL969 R7950 B593S b773 B-457 B7-47 Brady b-457 flexo ink brady ink ribbon
Contextual Info: UL Recognized Materials www.BradyID.com Reference Brady’s file number in category PGJI2 is MH17154. This category lists label materials and ribbons or toners which can be used to generate UL recognized labels by an end user. This category also includes labels pre-printed with printing inks at Brady in which end users can then add print

PTC B754

Contextual Info: PTC thermistors as inrush current limiters Leaded disks, uncoated Series/Type: B5975* Date: February 2012 EPCOS AG 2012. Reproduction, publication and dissemination of this publication, enclosures hereto and the information contained therein without EPCOS' prior express consent is prohibited.