2.7 3.5 GHZ Search Results

mgfs44v2735

Contextual Info: < L/S band internally matched power GaAs FET > MGFS44V2735 2.7 – 3.5 GHz BAND / 24W DESCRIPTION unit : m m OUTLINE The MGFS44V2735 is an internally impedance-matched GaAs power FET especially designed for use in 2.7 - 3.5 GHz band amplifiers. The hermetically sealed metal-ceramic

MGFS45V2735

Contextual Info: < L/S band internally matched power GaAs FET > MGFS45V2735 2.7 – 3.5 GHz BAND / 30W DESCRIPTION unit : m m OUTLINE The MGFS45V2735 is an internally impedance-matched GaAs power FET especially designed for use in 2.7 - 3.5 GHz band amplifiers. The hermetically sealed metal-ceramic

Contextual Info: < L/S band internally matched power GaAs FET > MGFS45V2735 2.7 – 3.5 GHz BAND / 30W DESCRIPTION unit : m m OUTLINE The MGFS45V2735 is an internally impedance-matched GaAs power FET especially designed for use in 2.7 - 3.5 GHz band amplifiers. The hermetically sealed metal-ceramic

Contextual Info: < L/S band internally matched power GaAs FET > MGFS44V2735 2.7 – 3.5 GHz BAND / 24W DESCRIPTION unit : m m OUTLINE The MGFS44V2735 is an internally impedance-matched GaAs power FET especially designed for use in 2.7 - 3.5 GHz band amplifiers. The hermetically sealed metal-ceramic

MGFS45V2735

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFS45V2735 2.7 - 3.5GHz BAND 30W INTERNALLY MATCHED GaAs FET OUTLINE FEATURES 2MIN DESCRIPTION The MGFS45V2735 is an internally impedance-matched GaAs power FET especially designed for use in 2.7 - 3.5 GHz band amplifiers. The hermetically sealed metal-ceramic

051 166

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFS45V2735 2.7 - 3.5GHz BAND 30W INTERNALLY MATCHED GaAs FET DESCRIPTION unit : mm OUTLINE The MGFS45V2735 is an internally impedance-matched GaAs power FET especially designed for use in 2.7 - 3.5 GHz band amplifiers. The hermetically sealed metal-ceramic

MGFS45V2735

Abstract: 051 166
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFS45V2735 2.7 - 3.5GHz BAND 30W INTERNALLY MATCHED GaAs FET O U TLIN E FEATURES 2M IN DESCRIPTION The MGFS45V2735 is an internally impedance-matched GaAs power FET especially designed for use in 2.7 - 3.5 GHz band amplifiers. The hermetically sealed metal-ceramic

Contextual Info: CMPA2735075F 75 W, 2.7 - 3.5 GHz, GaN MMIC, Power Amplifier Cree’s CMPA2735075F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium

CMPA2735075F

Contextual Info: CMPA2735075F 75 W, 2.7 - 3.5 GHz, GaN MMIC, Power Amplifier Cree’s CMPA2735075F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium

CMPA2735075F

Abstract: IDQ Freq Products RF-35-0100-CH
Contextual Info: CMPA2735075F 75 W, 2.7 - 3.5 GHz, GaN MMIC, Power Amplifier Cree’s CMPA2735075F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium

CMPA2735075F

Abstract: CMPA2735075F-TB RF-35-0100-CH cree military mobility CGH2735075 tRANSISTOR 2.7 3.1 3.5 GHZ cw AMP1052901-1
Contextual Info: ADVANCED INFORMATION CMPA2735075F 75 W, 2.7 - 3.5 GHz, GaN MMIC, Power Amplifier Cree’s CMPA2735075F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium

HMC279MS8G

Contextual Info: HMC279MS8G v02.0701 MICROWAVE CORPORATION GaAs MMIC DRIVER AMPLIFIER 2.5 - 4.2 GHz AMPLIFIERS - SMT 8 Typical Applications Features The HMC279MS8G is ideal for: High Gain: 36 dB • 2.6 - 2.7 GHz MMDS Psat Output Power: +14 dBm • 3.5 GHz Wireless Local Loop

Contextual Info: HMC279MS8G v02.0701 MICROWAVE CORPORATION GaAs MMIC DRIVER AMPLIFIER 2.5 - 4.2 GHz AMPLIFIERS - SMT 1 Typical Applications Features The HMC279MS8G is ideal for: High Gain: 36 dB • 2.6 - 2.7 GHz MMDS Psat Output Power: +14 dBm • 3.5 GHz Wireless Local Loop

Contextual Info: HMC279MS8G v02.0701 MICROWAVE CORPORATION GaAs MMIC DRIVER AMPLIFIER 2.5 - 4.2 GHz AMPLIFIERS - SMT 8 Typical Applications Features The HMC279MS8G is ideal for: High Gain: 36 dB • 2.6 - 2.7 GHz MMDS Psat Output Power: +14 dBm • 3.5 GHz Wireless Local Loop

Contextual Info: MICROWAVE CORPORATION HMC314 v02.0802 GaAs InGaP HBT MMIC DRIVER AMPLIFIER, 0.7 - 4.0 GHz AMPLIFIERS - SMT 8 Typical Applications Features Ideal Broadband Gain Stage for: P1dB Output Power: +18 dBm • 2.2 - 2.7 GHz MMDS Output IP3: +29 dBm • 3.5 GHz Wireless Local Loop

HMC314

Abstract: amplifier TRANSISTOR 12 GHZ
Contextual Info: MICROWAVE CORPORATION HMC314 v02.0802 GaAs InGaP HBT MMIC DRIVER AMPLIFIER, 0.7 - 4.0 GHz AMPLIFIERS - SMT 8 Typical Applications Features Ideal Broadband Gain Stage for: P1dB Output Power: +18 dBm • 2.2 - 2.7 GHz MMDS Output IP3: +29 dBm • 3.5 GHz Wireless Local Loop

Contextual Info: HMC314 v02.0802 GaAs InGaP HBT MMIC DRIVER AMPLIFIER, 0.7 - 4.0 GHz AMPLIFIERS - SMT 8 Typical Applications Features Ideal Broadband Gain Stage for: P1dB Output Power: +18 dBm • 2.2 - 2.7 GHz MMDS Output IP3: +29 dBm • 3.5 GHz Wireless Local Loop Gain: 12 dB

Contextual Info: HMC279MS8G v02.0701 GaAs MMIC DRIVER AMPLIFIER 2.5 - 4.2 GHz AMPLIFIERS - SMT 8 Typical Applications Features The HMC279MS8G is ideal for: High Gain: 36 dB • 2.6 - 2.7 GHz MMDS Psat Output Power: +14 dBm • 3.5 GHz Wireless Local Loop Single Supply: +3V @ 60 mA

ROGERS DUROID

Abstract: BLS6G2735L-30
Contextual Info: BLS6G2735L-30; BLS6G2735LS-30 S-band LDMOS transistor Rev. 3 — 24 September 2012 Product data sheet 1. Product profile 1.1 General description 30 W LDMOS power transistor for S-band radar applications in the frequency range from 2.7 GHz to 3.5 GHz. Table 1.

Contextual Info: HMC314 v01.0701 MICROWAVE CORPORATION GaAs InGaP HBT MMIC DRIVER AMPLIFIER, 0.7 - 4.0 GHz AMPLIFIERS - SMT 1 Typical Applications Features Ideal Broadband Gain Stage for: P1dB Output Power: +18 dBm • 2.2 - 2.7 GHz MMDS Output IP3: +29 dBm • 3.5 GHz Wireless Local Loop

Contextual Info: BLS6G2735L-30; BLS6G2735LS-30 S-band LDMOS transistor Rev. 1 — 11 October 2011 Objective data sheet 1. Product profile 1.1 General description 30 W LDMOS power transistor for S-band radar applications in the frequency range from 2.7 GHz to 3.5 GHz. Table 1.

Contextual Info: MICROWAVE CORPORATION HMC314 v02.0802 GaAs InGaP HBT MMIC DRIVER AMPLIFIER, 0.7 - 4.0 GHz AMPLIFIERS - SMT 1 Typical Applications Features Ideal Broadband Gain Stage for: P1dB Output Power: +18 dBm • 2.2 - 2.7 GHz MMDS Output IP3: +29 dBm • 3.5 GHz Wireless Local Loop

Contextual Info: BLS6G2735L-30; BLS6G2735LS-30 S-band LDMOS transistor Rev. 2 — 4 September 2012 Preliminary data sheet 1. Product profile 1.1 General description 30 W LDMOS power transistor for S-band radar applications in the frequency range from 2.7 GHz to 3.5 GHz. Table 1.

s11a

Abstract: AV141-321 QFN-12
Contextual Info: Preliminary GaAs IC 25 dB Voltage Variable Attenuator 2.7–4.0 GHz AV141-321 Features • Power Control for 3.5 GHz Fixed Wireless Applications ■ Minimum 25 dB Attenuation ■ Positive 0.2–1.2 V Control Voltage ■ QFN-12 3 x 3 mm Package ■ Low Cost