2 CHANNEL N-CHANNEL MOSFET Search Results

2 CHANNEL N-CHANNEL MOSFET Result Highlights (5)

Part	Manufacturer	Description	Download
TK5R1A08QM	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 80 V, 70 A, 0.0051 Ohm@10V, TO-220SIS	Datasheet
TK155E65Z	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 650 V, 0.155 Ω@10V, TO-220, DTMOSⅥ	Datasheet
TK090U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL	Datasheet
TK5R3E08QM	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 80 V, 120 A, 0.0053 Ohm@10V, TO-220AB	Datasheet
TK065U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 38 A, 0.065 Ohm@10V, TOLL	Datasheet

2 CHANNEL N-CHANNEL MOSFET Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: Si4824DY Vishay Siliconix Asymmetric N-Channel, Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V N Channel 1 N-Channel 30 N Channel 2 N-Channel rDS(on) (W) ID (A) 0.040 @ VGS = 10 V 4.7 0.065 @ VGS = 4.5 V 3.7 0.0175 @ VGS = 10 V 9 0.027 @ VGS = 4.5 V	Original	Si4824DY Si4824DY-T1 08-Apr-05	PDF
BTA 16 6008 Abstract: bta 06 400 v BTA 06 600 T application note BTA 600 Si4824DY Si4824DY-T1 Contextual Info: Si4824DY Vishay Siliconix Asymmetric N-Channel, Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V N Channel 1 N-Channel 30 N Channel 2 N-Channel rDS(on) (W) ID (A) 0.040 @ VGS = 10 V 4.7 0.065 @ VGS = 4.5 V 3.7 0.0175 @ VGS = 10 V 9 0.027 @ VGS = 4.5 V	Original	Si4824DY Si4824DY-T1 S-31726--Rev. 18-Aug-03 BTA 16 6008 bta 06 400 v BTA 06 600 T application note BTA 600	PDF
Si4824DY Abstract: Si4824DY-T1 Contextual Info: Si4824DY Vishay Siliconix Asymmetric N-Channel, Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V N Channel 1 N-Channel 30 N Channel 2 N-Channel rDS(on) (W) ID (A) 0.040 @ VGS = 10 V 4.7 0.065 @ VGS = 4.5 V 3.7 0.0175 @ VGS = 10 V 9 0.027 @ VGS = 4.5 V	Original	Si4824DY Si4824DY-T1 18-Jul-08	PDF
uPA67 Abstract: SC74A uPA672T UPA572T upa500 uPA600 UPA607T Contextual Info: DUAL N & P CHANNEL SMALL SIGNAL MOSFETS µPA500 & µPA600 SERIES • DUAL N CHANNEL, DUAL P CHANNEL AND A COMBINED N AND P CHANNEL • DRAIN CURRENTS LESS THAN 200mA • CAPABLE OF OPERATING FROM VOLTAGES AS LOW AS 1.5V N Type 1 5 1 2 P Type 2 4 5 3 1 N Type 4	Original	PA500 PA600 200mA PA572T PA672T PA502T PA602T PA606T PA611TA PA573T uPA67 SC74A uPA672T UPA572T upa500 uPA600 UPA607T	PDF
z418.2dpf.s20v Abstract: S/sot-23 MARKING CODE 70.2 Contextual Info: Central 2 N 7 00 2 Sem iconductor Corp. N-CHANNEL ENHANCEMENT-MODE MOSFET DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N7002 type is a N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications.	OCR Scan	OT-23 2N7002 500mA 500mA, 200mA z418.2dpf.s20v S/sot-23 MARKING CODE 70.2	PDF
NDS9942 Abstract: National Semiconductor Discrete catalog SOIC-8 NDS9952 NDS9943 NDS9958 P channel SOIC8 Contextual Info: bôE D • bS0113G QG3cll4Tl4 T45 M N S C S NATL SEMICOND DISCRETE Complemetary N-P Channel 2 Max NDS9942 0.125 0.25 3 2 N Channel 0.2 0.35 -2.5 NDS9943* 0.125 0.25 3 2 N Channel 0.16 0.3 -2.8 0.1 0.15 3 2 N Channel 0.25 0.4 -2.3 0.1 0.15 3.5 0.11 0.19 -3	OCR Scan	bSD1130 NDS9942 NDS9943* NDS9952 NDS9958* National Semiconductor Discrete catalog SOIC-8 NDS9943 NDS9958 P channel SOIC8	PDF
Contextual Info: Si4503DY New Product Vishay Siliconix N- and P-Channel MOSFET FEATURES PRODUCT SUMMARY VDS V N-Channel (Channel 2) 30 P-Channel (Channel 1) –8 rDS(on) (W) ID (A) 0.018 @ VGS = 10 V 8.8 0.027 @ VGS = 4.5 V 7.2 0.042 @ VGS = –4.5 V –4.5 0.060 @ VGS = –2.5 V	Original	Si4503DY 08-Apr-05	PDF
Contextual Info: Si4503DY New Product Vishay Siliconix N- and P-Channel MOSFET FEATURES PRODUCT SUMMARY VDS V N-Channel (Channel 2) 30 P-Channel (Channel 1) –8 rDS(on) (W) ID (A) 0.018 @ VGS = 10 V 8.8 0.027 @ VGS = 4.5 V 7.2 0.042 @ VGS = –4.5 V –4.5 0.060 @ VGS = –2.5 V	Original	Si4503DY S-20894--Rev. 17-Jun-02	PDF
Si4503DY Abstract: Si4503 Contextual Info: Si4503DY New Product Vishay Siliconix N- and P-Channel MOSFET FEATURES PRODUCT SUMMARY VDS V N-Channel (Channel 2) 30 P-Channel (Channel 1) –8 rDS(on) (W) ID (A) 0.018 @ VGS = 10 V 8.8 0.027 @ VGS = 4.5 V 7.2 0.042 @ VGS = –4.5 V –4.5 0.060 @ VGS = –2.5 V	Original	Si4503DY 18-Jul-08 Si4503	PDF
Contextual Info: Si4503DY New Product Vishay Siliconix N- and P-Channel MOSFET FEATURES PRODUCT SUMMARY VDS V N-Channel (Channel 2) 30 P-Channel (Channel 1) –8 rDS(on) (W) ID (A) 0.018 @ VGS = 10 V 8.8 0.027 @ VGS = 4.5 V 7.2 0.042 @ VGS = –4.5 V –4.5 0.060 @ VGS = –2.5 V	Original	Si4503DY S-05482--Rev. 21-Jan-02	PDF
Mosfet Array 15 pin Abstract: V2557 LH1162AAP mosfet array Contextual Info: A T & T MELEC I C 2SE D • OOSQOSb Daasas? Q ■ QUAD HIGH-VOLTAGE N-CHANNEL MOSFET ARRAY_ LH1162AAP ADVANCE T -Y 3 -2 5 Monolithic N-Channel Enhancement-Mode Description The LH1162AAP Quad High-Voltage N-Channel M O SFET Array contains four independent N-Channel DM OS drivers	OCR Scan	LH1162AAP T-Y3-25 LH1162AAP a0S002h Mosfet Array 15 pin V2557 mosfet array	PDF
lm358 current sense Abstract: lm358 16pin diagram LM324 noise Enhancement Mode MOSFET Array pin configuration of LM358 disadvantages of mosfet Contextual Info: P W R -N C H 2 0 1 -T-39-»-» 2-Channel MOSFET Array 400 V - 675 mA per channel POWER in t e g r a l s a a a Product Highlights 2 open-drain N-channel MOSFETs per package PWR-NCH201	OCR Scan	PWR-NCH201 OTO70° PWR-NCH201BNC1 16-PIN PWR-NCH201BNC2 PWR-NCH201BNC3 lm358 current sense lm358 16pin diagram LM324 noise Enhancement Mode MOSFET Array pin configuration of LM358 disadvantages of mosfet	PDF
Si4310BDY Contextual Info: Si4310BDY New Product Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode PRODUCT SUMMARY FEATURES VDS (V) Channel 1 Channel-1 30 Channel 2 Channel-2 rDS(on) (W) ID (A) 0.011 @ VGS = 10 V 10 0.016 @ VGS = 4.5 V 8.2 0.0085 @ VGS = 10 V 14	Original	Si4310BDY SO-14 08-Apr-05	PDF
Si4814DY Contextual Info: Si4814DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) Channel 1 Channel-1 30 Channel 2 Channel-2 rDS(on) (W) ID (A) 0.021 @ VGS = 10 V 7.0 0.0325 @ VGS = 4.5 V 5.6 0.020 @ VGS = 10 V 7.4 0.0265 @ VGS = 4.5 V	Original	Si4814DY S-03951--Rev. 26-May-03	PDF

Contextual Info: Si4818DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) Channel 1 Channel-1 30 Channel 2 Channel-2 rDS(on) (W) ID (A) 0.022 @ VGS = 10 V 6.3 0.030 @ VGS = 4.5 V 5.4 0.0155 @ VGS = 10 V 9.5 0.0205 @ VGS = 4.5 V	Original	Si4818DY Si4818DY-T1 18-Jul-08	PDF
Si4308DY Contextual Info: Si4308DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) Channel 1 Channel-1 30 Channel 2 Channel-2 rDS(on) (W) ID (A) 0.012 @ VGS = 10 V 9.6 0.018 @ VGS = 4.5 V 7.8 0.010 @ VGS = 10 V 13.5 0.0110 @ VGS = 4.5 V	Original	Si4308DY SO-14 Si4308DY-T1 S-32078--Rev. 13-Oct-03	PDF
Contextual Info: Si4814BDY New Product Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel 1 Channel-1 30 Channel 2 Channel-2 ID (A)a rDS(on) (W) 0.018 @ VGS = 10 V 10 0.023 @ VGS = 4.5 V 8.5 0.018 @ VGS = 10 V 10.5	Original	Si4814BDY Si4814BDY--E3 Si4814BDY-T1--E3 08-Apr-05	PDF
Contextual Info: Si4826DY Vishay Siliconix Asymmetrical Dual N-Channel 30-V D-S MOSFET PRODUCT SUMMARY FEATURES VDS (V) Channel 1 Channel-1 30 Channel 2 Channel-2 rDS(on) (W) ID (A) 0.022 @ VGS = 10 V 6.3 0.030 @ VGS = 4.5 V 5.4 0.0155 @ VGS = 10 V 9.5 0.0205 @ VGS = 4.5 V	Original	Si4826DY Si4826DY-T1 08-Apr-05	PDF
Contextual Info: Si4814DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) Channel 1 Channel-1 30 Channel 2 Channel-2 rDS(on) (W) ID (A) 0.021 @ VGS = 10 V 7.0 0.0325 @ VGS = 4.5 V 5.6 0.020 @ VGS = 10 V 7.4 0.0265 @ VGS = 4.5 V	Original	Si4814DY S-31421â 07-Jul-03	PDF
Si4818DY Abstract: Si4818DY-T1 Contextual Info: Si4818DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) Channel 1 Channel-1 30 Channel 2 Channel-2 rDS(on) (W) ID (A) 0.022 @ VGS = 10 V 6.3 0.030 @ VGS = 4.5 V 5.4 0.0155 @ VGS = 10 V 9.5 0.0205 @ VGS = 4.5 V	Original	Si4818DY Si4818DY-T1 S-31062--Rev. 26-May-03	PDF
Contextual Info: Si4974DY New Product Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) Channel 1 Channel-1 30 Channel 2 Channel-2 rDS(on) (W) ID (A) 0.019 @ VGS = 10 V 8.0 0.026 @ VGS = 4.5 V 6.9 0.035 @ VGS = 10 V 6.0 0.048 @ VGS = 4.5 V	Original	Si4974DY Si4974DY-T1--E3 08-Apr-05	PDF
Contextual Info: Si4376DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) Channel 1 Channel-1 30 Channel 2 Channel-2 rDS(on) (W) ID (A) 0.020 @ VGS = 10 V 7.5 0.0275 @ VGS = 4.5 V 6.5 0.019 @ VGS = 10 V 7.5 0.023 @ VGS = 4.5 V	Original	Si4376DY Si4830DY Si4376DY-T1 S-31726--Rev. 18-Aug-03	PDF
CI 3060 elsys Abstract: Si4310BDY Contextual Info: Si4310BDY New Product Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode PRODUCT SUMMARY FEATURES VDS (V) Channel 1 Channel-1 30 Channel 2 Channel-2 rDS(on) (W) ID (A) 0.011 @ VGS = 10 V 10 0.016 @ VGS = 4.5 V 8.2 0.0085 @ VGS = 10 V 14	Original	Si4310BDY SO-14 18-Jul-08 CI 3060 elsys	PDF
Si4350DY Abstract: Si4350DY-T1 CH248 Contextual Info: Si4350DY Vishay Siliconix New Product Dual N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) Channel 1 Channel-1 20 Channel 2 Channel-2 rDS(on) (W) ID (A) 0.012 @ VGS = 10 V 9.6 0.0175 @ VGS = 4.5 V 7.8 0.0075 @ VGS = 10 V 15 0.010 @ VGS = 4.5 V	Original	Si4350DY SO-14 Si4350DY-T1 S-32514--Rev. 08-Dec-03 CH248	PDF

2 CHANNEL N-CHANNEL MOSFET Search Results

2 CHANNEL N-CHANNEL MOSFET Result Highlights (5)

2 CHANNEL N-CHANNEL MOSFET Datasheets Context Search

BTA 16 6008

Si4824DY

uPA67

z418.2dpf.s20v

NDS9942

Si4503DY

Mosfet Array 15 pin

lm358 current sense

Si4310BDY

Si4814DY

Si4308DY

Si4818DY

CI 3060 elsys

Si4350DY