SI4974DY Search Results
SI4974DY Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| SI4974DY-T1-E3 | Vishay Siliconix | FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 30V 6A 8-SOIC | Original | 9 |
SI4974DY Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
Si4974DYContextual Info: SPICE Device Model Si4974DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range |
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si4974dys-52574rev02-jan-06 | |
Mosfet 2903
Abstract: AN609 Si4974DY 14128-2
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si4974dyan60926-sep-07mosfet 2903+1 | |
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Contextual Info: Si4974DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 RDS(on) (Ω) ID (A) 0.019 at VGS = 10 V 8.0 0.026 at VGS = 4.5 V 6.9 0.035 at VGS = 10 V 6.0 0.048 at VGS = 4.5 V 5.0 • Halogen-free According to IEC 61249-2-21 |
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si4974dysi4974dy-t1-e3si4974dy-t1-ge32002/95/ec+3 | |
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Contextual Info: Si4974DY New Product Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) Channel 1 Channel-1 30 Channel 2 Channel-2 rDS(on) (W) ID (A) 0.019 @ VGS = 10 V 8.0 0.026 @ VGS = 4.5 V 6.9 0.035 @ VGS = 10 V 6.0 0.048 @ VGS = 4.5 V |
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si4974dysi4974dy-t1--e308-apr-05 | |
Si4974DY
Abstract: Si4974DY-T1-E3
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si4974dysi4974dy-t1-e3si4974dy-t1-ge318-jul-08 | |
Si4974DY
Abstract: Si4974DY-T1-E3 Si4974
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si4974dysi4974dy-t1-e308-apr-05si4974 | |
Si4974DYContextual Info: SPICE Device Model Si4974DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range |
Original |
si4974dy18-jul-08 | |
si4974Contextual Info: Si4974DY Vishay Siliconix New Product Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 rDS(on) (Ω) ID (A) 0.019 at VGS = 10 V 8.0 0.026 at VGS = 4.5 V 6.9 0.035 at VGS = 10 V 6.0 0.048 at VGS = 4.5 V 5.0 • TrenchFET Power MOSFET |
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si4974dysi4974dy-t1-e318-jul-08si4974 | |
CAT7105CA
Abstract: mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al
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5ce120c5ke120ca5ce120ca5ce12a+14 | |
BS250KL-TR1-E3
Abstract: si6435adq-t1-e3 TP0610KL Si9435BDY-T1-e3ct SI6467BDQ-T1-E3 SI1024X-T1-E3 SI5855DC-T1-E3 SIA411DJ-T1-E3 SUM110P06-07L-E3 D2PAK SI1903DL-T1-E3
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si3865bdv-t1-e3ct-ndsi4720cy-t1-e3ct-ndsi6924aedq-t1-e3ct-ndsi1040x-t1-e3tr-nd+16 | |
q406 transistor
Abstract: SI9120 equivalent Q406 q406 SUM65N20-30 Si3456BDV SPICE Device Model sud*50n025 Si4304DY 0038 tsop Si2325DS
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sip41109sip41110sip4111175/2a+10 | |
vishay power pak SO-8 package height
Abstract: si4812b Siliconix mosfet guide PowerPACK 1212-8 D2Pak Package vishay material Si5855DC "Power MOSFETs" 1206-8 chipfet layout SI4620DY PowerPAK SO-8
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sc-75sc-75asc-89vishay power pak so-8 package height+9 |