SI4376DY Search Results

3121

Abstract: AN609 Si4376DY 101928
Contextual Info: Si4376DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

Si4376DY

Contextual Info: SPICE Device Model Si4376DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si4376DY

Contextual Info: SPICE Device Model Si4376DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Contextual Info: Si4376DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) Channel 1 Channel-1 30 Channel 2 Channel-2 rDS(on) (W) ID (A) 0.020 @ VGS = 10 V 7.5 0.0275 @ VGS = 4.5 V 6.5 0.019 @ VGS = 10 V 7.5 0.023 @ VGS = 4.5 V

Si4376DY

Abstract: Si4376DY-T1 Si4830DY
Contextual Info: Si4376DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) Channel 1 Channel-1 30 Channel 2 Channel-2 rDS(on) (W) ID (A) 0.020 @ VGS = 10 V 7.5 0.0275 @ VGS = 4.5 V 6.5 0.019 @ VGS = 10 V 7.5 0.023 @ VGS = 4.5 V

Si4376DY

Abstract: Si4376DY-T1 Si4830DY
Contextual Info: Si4376DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) 0.020 at VGS = 10 V 0.0275 at VGS = 4.5 V 0.019 at VGS = 10 V 0.023 at VGS = 4.5 V Channel-1 30 Channel-2 • • • • ID (A) 7.5

Si4376DY

Abstract: Si4376DY-T1 Si4830DY
Contextual Info: Si4376DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) Channel 1 Channel-1 30 Channel 2 Channel-2 rDS(on) (W) ID (A) 0.020 @ VGS = 10 V 7.5 0.0275 @ VGS = 4.5 V 6.5 0.019 @ VGS = 10 V 7.5 0.023 @ VGS = 4.5 V

Si4376DY

Contextual Info: SPICE Device Model Si4376DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Contextual Info: Si4376DY New Product Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 rDS(on) (W) ID (A) 0.020 @ VGS = 10 V 7.5 0.0275 @ VGS = 4.5 V 6.5 0.019 @ VGS = 10 V 7.5 0.023 @ VGS = 4.5 V 6.5 FEATURES

Si4376DY

Abstract: Si4830DY
Contextual Info: Si4376DY New Product Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 rDS(on) (W) ID (A) 0.020 @ VGS = 10 V 7.5 0.0275 @ VGS = 4.5 V 6.5 0.019 @ VGS = 10 V 7.5 0.023 @ VGS = 4.5 V 6.5 FEATURES

Contextual Info: Si4376DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) 0.020 at VGS = 10 V 0.0275 at VGS = 4.5 V 0.019 at VGS = 10 V 0.023 at VGS = 4.5 V Channel-1 30 Channel-2 • • • • ID (A) 7.5

71917

Abstract: level logic mosfet transistor so-8 offline switchmode si9110 siliconix an607 AN607 AN707 SI4406DY PowerPAK SO-8 si2301ds
Contextual Info: AN607 Vishay Siliconix DC-to-DC Design Guide Serge Jaunay, Jess Brown INTRODUCTION Manufacturers of electronic systems that require power conversion are faced with the need for higher-density dc-to-dc converters that perform more efficiently, within a smaller

q406 transistor

Abstract: SI9120 equivalent Q406 q406 SUM65N20-30 Si3456BDV SPICE Device Model sud*50n025 Si4304DY 0038 tsop Si2325DS
Contextual Info: Power MOSFETS for DC/DC Applications Vishay Siliconix 2201 Laurelwood Road P.O. Box 54951 Santa Clara, CA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no

sud*50n025-06p

Abstract: SUD70N03-04P SI9120 sum45n25 SI9119 Si7810DN sud*50n025-09p SI2301ADS SI4732CY si9110
Contextual Info: SELECTOR GUIDE V I S H A Y I N T E R T E C H N O L O G Y, I N C . Power MOSFETs for DC/DC Applications Siliconix LITTLE FOOT LITTLE FOOT® Plus Tr e n c h F E T ® WFET ChipFET® P ow e r PA K ® Application-Specific MOSFETs w w w. v i s h a y. c o m