SI4310BDY Search Results
SI4310BDY Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| SI4310BDY-T1-E3 | Vishay Siliconix | FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 30V 7.5A 14SOIC | Original | 13 |
SI4310BDY Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
SI4310
Abstract: Si4310BDY
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Original |
si4310bdy2002/95/ecso-142011/65/eu+3 | |
max3572Contextual Info: Si4310BDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Channel-1 30 Channel-2 ID (A) 0.011 at VGS = 10 V 10 0.016 at VGS = 4.5 V 8.2 0.0085 at VGS = 10 V 14 0.0095 at VGS = 4.5 V 13 • Halogen-free According to IEC 61249-2-21 |
Original |
si4310bdy2002/95/ecso-142011/65/eu+2 | |
Si4310BDYContextual Info: Si4310BDY New Product Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode PRODUCT SUMMARY FEATURES VDS (V) Channel 1 Channel-1 30 Channel 2 Channel-2 rDS(on) (W) ID (A) 0.011 @ VGS = 10 V 10 0.016 @ VGS = 4.5 V 8.2 0.0085 @ VGS = 10 V 14 |
Original |
si4310bdyso-1408-apr-05 | |
Si4310BDYContextual Info: Si4310BDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Channel-1 30 Channel-2 ID (A) 0.011 at VGS = 10 V 10 0.016 at VGS = 4.5 V 8.2 0.0085 at VGS = 10 V 14 0.0095 at VGS = 4.5 V 13 • Halogen-free According to IEC 61249-2-21 |
Original |
si4310bdy2002/95/ecso-1411-mar-11 | |
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Contextual Info: Si4310BDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Channel-1 30 Channel-2 ID (A) 0.011 at VGS = 10 V 10 0.016 at VGS = 4.5 V 8.2 0.0085 at VGS = 10 V 14 0.0095 at VGS = 4.5 V 13 • Halogen-free According to IEC 61249-2-21 |
Original |
si4310bdy2002/95/ecso-1418-jul-08 | |
Si4310BDYContextual Info: SPICE Device Model Si4310BDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range |
Original |
si4310bdy18-jul-08 | |
CI 3060 elsys
Abstract: Si4310BDY
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Original |
si4310bdyso-1418-jul-08ci 3060 elsys | |
Si4310BDYContextual Info: Si4310BDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Channel-1 30 Channel-2 ID (A) 0.011 at VGS = 10 V 10 0.016 at VGS = 4.5 V 8.2 0.0085 at VGS = 10 V 14 0.0095 at VGS = 4.5 V 13 • Halogen-free According to IEC 61249-2-21 |
Original |
si4310bdy2002/95/ecso-1411-mar-11 |