1X106 Search Results

harris 6616

Contextual Info: b3E D MSS1Ö7E 0 0 0 0 * 1 0 5 ROMs Honeywell 1ST * H 0 N 3 HONEYÜI ELL/ S S E C 2K x 8 RADIATION-HARDENED ROM HC6616 FEATURES RADIATION OTHER • Fabricated with RICMOS Epitaxial1.2 im Process • Typical 45 ns Access Time • Total Dose Hardness through 1x106 rad(Si02

Contextual Info: HONE YWEL L / S S E C 3ÖE D 4ssia?a ooddsms a H0 N3 '•■V Military Products 32K X Preliminary 8 RADIATION-HARDENED STATIC RAM HC6856 FEATURES RADIATION OTHER • Fabricated with RICMOS Bulk 0.8 nm Process • Total Dose Hardness through 1x106 rad Si02

Contextual Info: Honeywell Military & Space Products HC6856 32K x 8 STATIC RAM FEATURES RADIATION OTHER • Fabricated with R IC M O S “ IV Bulk 0.8 urn Process Lelf = 0.65 urn • Listed on SMD #5962-92153. Available as MIL-PRF-38535 QML Class Q and Class V • Total Dose Hardness through 1x106 rad(S i02)

HX6856

Abstract: x-ray cmos HX6856/2
Contextual Info: • I K U Military Products Preliminary 32K x 8 RADIATION-HARDENED STATIC RAM-SGI HX6856 FEATURES OTHER RADIATION Fabricated with RICMOS IV Silicon on Insulator SOI 0.8 |nm Process • Read/Write Cycle Times < 2 5 ns (-55 to125°C ) Total Dose Hardness through 1x106 rad(S i02)

2729-300P

Contextual Info: 2729-300P R3 2729-300P 300W PSM - PLUG AND PLAY - For S-Band Air Traffic Control Application 300 Watts - 100µs, 10%, 36V S-Band Pulsed Radar 2700 - 2900 MHz • • • • Easy To Use – 50 Ω Plug-and-Play High Reliability MTTF> 1x106 hrs Mil Standard 750 Method 2016/2056

Contextual Info: Honeywell Aerospace Electronics HX6356 32K x 8 STATIC RAM—SOI FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 |j.m Process (Left= 0.6 (im) • Listed On SMD# 5962-95845 • Total Dose Hardness through 1x106rad(S i02)

footswitch

Abstract: DC1310 DC-12 en 60204-1 A 6252
Contextual Info: 6252 ~ Heavy Duty Footswitch Benefits ❖ Forced break positive opening contacts, BG approved to EN 60204-1 / EN 60947-5-1 ❖ Average life expectancy 1x106 operations ❖ Rugged high performing heavy duty footswitch ❖ Waterproof to IP67, IP68 upon request

Contextual Info: Military & Space Products HLX6228 128K x 8 STATIC RAM—Low Power SOI FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.7 µm Low Power Process (Leff = 0.55 µm) • Read/Write Cycle Times ≤ 35 ns (-55 to 125°C) • Total Dose Hardness through 1x106 rad(Si)

footswitch

Abstract: KEMA microswitch microswitch v3 380v change over switch 10A 380V MICROSWITCH AC11 electrical load microswitches snap action Microswitch
Contextual Info: 6251 ~ Heavy Duty Footswitch Benefits ❖ Average life expectancy 1x106 operations ❖ Rugged high performing heavy duty footswitch ❖ Waterproof to IP67, IP68 upon request ❖ Choice of colours ❖ Distinctive styling ❖ Screw terminals and self-lifting clamp for connection of

2729-300P

Abstract: traffic control
Contextual Info: 2729-300PR1 2729-300P 300W PSM - PLUG AND PLAY - For S-Band Air Traffic Control Application 300 Watts - 100µs, 10%, 36V S-Band Pulsed Radar 2700 - 2900 MHz • • • • Easy To Use – 50 Ω Plug-and-Play High Reliability MTTF> 1x106 hrs Mil Standard 750 Method 2016/2056

smd TRANSISTOR code marking 8K

Abstract: pepi c TRANSISTOR SMD MARKING CODE QO SMD MARKING code 4N
Contextual Info: Honeywell HC6664 8K X 8 RADIATION-HARDENED ROM FEATURES RADIATION OTHER • Fabricated with RICMOS Epitaxial 1.2 M_m Process • Listed on SMD #5962-93171. Available as MIL-l-38535 QML Class Q and V • Total Dose Hardness through 1x106 rad Si02 • Access Time of 25 ns (typical)

HXNV0100

Abstract: Tunneling Magnetoresistance mram HXVN0100 MIL-PRF38535 S150 Department of Defense honeywell mram
Contextual Info: HXVN0100 HXNV0100 1Megabit 64K x 16 Non-Volatile Magneto-Resistive RAM Features • Fabricated on S150 Silicon On Insulator SOI CMOS Underlayer Technology ■ 150 nm Process (Leff = 130 nm) ■ Total Dose Hardness ≥ 1x106 rad (Si) ■ ■ ■ Dose Rate Upset Hardness ≥ 1x109

Contextual Info: Aerospace Electronics 32K x 8 STATIC RAM—SOI HX6356 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 µm Process (Leff = 0.6 µm) • Listed On SMD# 5962-95845 • Total Dose Hardness through 1x106 rad(SiO2) • Fast Read/Write Cycle Times

rom radiation

Abstract: HX6656 900-154
Contextual Info: Military & Space Products 32K x 8 ROM—SOI HX6656 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 µm Process (Leff = 0.6 µm) • Read Cycle Times < 17 ns (Typical) ≤ 25 ns (-55 to 125°C) • Total Dose Hardness through 1x106 rad(SiO2)

Contextual Info: GO TO TABLE OF CONTENTS Three-Circuit Line Interrupt F85 Series F85 16 amp F86 0.1 amp F87 0.1/16 amp Features • Meets UL 1950 ■ 8mm contact gap 4mm/side ■ Snap in panel mounting ■ Agency approved extended life versions available Thermoplastic Case

Contextual Info: T E X A S I N S T R U M E N T S - P R O D U C T I ON D ATA Stellaris LM3S5732 Microcontroller DATA SH E E T DS - LM 3S 5732 -111 0 7 C opyri ght 200 7- 2011 Texas Instruments Incorpor at ed Copyright Copyright © 2007-2011 Texas Instruments Incorporated All rights reserved. Stellaris® and StellarisWare® are registered trademarks of Texas Instruments

Contextual Info: T E X A S I N S T R U M E N T S - P R O D U C T I ON D ATA Stellaris LM3S6637 Microcontroller DATA SH E E T DS - LM 3S 6637 -1 2 7 4 6 .2 5 1 5 S P M S 136H C opyri ght 2007- 2012 Texas Instruments Incorpor at ed Copyright Copyright © 2007-2012 Texas Instruments Incorporated All rights reserved. Stellaris and StellarisWare® are registered trademarks of Texas Instruments

Contextual Info: T E X A S I N S T R U M E N T S - P R O D U C T I ON D ATA Stellaris LM3S3748 Microcontroller DATA SH E E T DS - LM 3S 3748 -111 0 7 C opyri ght 200 7- 2011 Texas Instruments Incorpor at ed Copyright Copyright © 2007-2011 Texas Instruments Incorporated All rights reserved. Stellaris® and StellarisWare® are registered trademarks of Texas Instruments

Contextual Info: T E X A S I N S T R U M E N T S - P R O D U C T I ON D ATA Stellaris LM3S9U90 Microcontroller DATA SH E E T DS - LM 3S 9U90 -11 4 2 5 C opyri ght 2007- 2012 Texas Instruments Incorpor at ed Copyright Copyright © 2007-2012 Texas Instruments Incorporated All rights reserved. Stellaris and StellarisWare® are registered trademarks of Texas Instruments

Contextual Info: T E X A S I N S T R U M E N T S - P R O D U C T I ON D ATA Stellaris LM3S1635 Microcontroller DATA SH E E T DS - LM 3S 1635 -1 2 7 4 6 .2 5 1 5 S P M S 027H C opyri ght 2007- 2012 Texas Instruments Incorpor at ed Copyright Copyright © 2007-2012 Texas Instruments Incorporated All rights reserved. Stellaris and StellarisWare® are registered trademarks of Texas Instruments

Contextual Info: T E X A S I N S T R U M E N T S - P R O D U C T I ON D ATA Stellaris LM3S1133 Microcontroller DATA SH E E T DS - LM 3S 1133 -1 2 7 4 6 .2 5 1 5 S P M S 010H C opyri ght 2007- 2012 Texas Instruments Incorpor at ed Copyright Copyright © 2007-2012 Texas Instruments Incorporated All rights reserved. Stellaris and StellarisWare® are registered trademarks of Texas Instruments

delta dps 298 cp A

Abstract: ISO106 56FR
Contextual Info: Freescale Semiconductor Advance Information Document Number: MM912_637D1 Rev. 3.0, 1/2012 Xtrinsic Battery Sensor with LIN for 12 V Lead-acid Batteries MM912_637 EP SUFFIX PB-FREE 98ASA00343D 48-PIN QFN Freescale's Xtrinsic MM912_637 battery sensors are fully

Contextual Info: T E X A S I N S T R U M E N T S - P R O D U C T I ON D ATA Stellaris LM3S1P51 Microcontroller DATA SH E E T DS - LM 3S 1P 51 -11 4 2 5 C opyri ght 2007- 2012 Texas Instruments Incorpor at ed Copyright Copyright © 2007-2012 Texas Instruments Incorporated All rights reserved. Stellaris and StellarisWare® are registered trademarks of Texas Instruments

Contextual Info: T E X A S I N S T R U M E N T S - P R O D U C T I ON D ATA Stellaris LM3S5P56 Microcontroller DATA SH E E T DS - LM 3S 5P 56 -11 4 2 5 C opyri ght 2007- 2012 Texas Instruments Incorpor at ed Copyright Copyright © 2007-2012 Texas Instruments Incorporated All rights reserved. Stellaris and StellarisWare® are registered trademarks of Texas Instruments