1T15 Search Results

Contextual Info: E2D0017-27-42 O K I Semiconductor M S M 6652/53/54/55/56-xxx, M SM 6652A/53A/ 54A/55A/56A/58A-xxx, MSM66P54-XX, MSM66P56-xx Under development , MSM6650 Internal Mask ROM Voice Synthesis 1C, Internal One-Time-Programmable (OTP) ROM Voice Synthesis 1C, External ROM Drive Voice Synthesis 1C

1V100RK

Abstract: 1T330 1Z56 N2400 1C39RK N5600 1p39 1V75RK N220 N3300
Contextual Info: 1002 Reader's 6/21/99 11:36 AM Page 29 Leaded Temperature Compensating Capacitors • ■ ■ Available in NPO through N5600 dielectrics Specifically designed temperature coefficient characteristic curve Used in high shock and cross over applications Specifications

1t13

Abstract: CLM4040 CLM4040CN CLM4040CS CLM4040CY CLM4040DN CLM4040DS CLM4040DY CLM4040EN CLM4040ES
Contextual Info: Precision Micropower Bandgap Shunt Reference CORPORATION CLM4040 FEATURES • • • • DESCRIPTION Trimmed Bandgap Design . . . . . . . . . . . . . . . . . . . . 0.2% Wide Operating Current Range . . . . . . . . 60µA to 20mA Low Dynamic Impedance . . . . . . . . . . . . . . . . . . . . 0.25Ω

AMD k86

Contextual Info: AM D£I ADVANCE INFORMATION Élan SC400 Single-Chip, Low-Power, PC/AT-Compatible Microcontroller DISTINCTIVE CHARACTERISTICS • Standard PC/AT system logic PICs, DMACs, timer, RTC ■ E86™ family of x86 embedded processors — Offers improved time-to-market, software

ME200605

Abstract: MB11A02 ME100603 three phase bridge diode ME101203 ME602003 CE720802 ME201
Contextual Info: POlilEREX INC TÏ de 1 75^4^51 □ ODlfl3t4 T D Three Phase Bridge Diode Modules Idc @ Tc Amps (°C) Vrrh (Volts) Ifsm (Amps) trr (typical) (¡¿sec) VlSOL (Vrus) Package Type No. 20_ 97_ 800_350_ —_ 2000_ ME4_ ME400802

Contextual Info: VIS Preliminary VG36648041BT CMOS Synchronous Dynamic RAM Description The device is C M O S S ynchronous D ynam ic RAM organized as 2 ,097,152 - w ord x 8 -bit x 4-bank, it is fabricated w ith an advanced subm icron C M O S te ch n o lo g y and designed to operate from a sin g ly 3.3V only

thyristor ot 112

Abstract: BUX 127 MARKING BUX MB11A02 diode V149 bux diode 800 300 CD420690 CD420640 CD421440
Contextual Info: POUEREX INC TLD D • 75^4^21 Q D G lfl2fl 3 ■ tl AV TO (Amps) (°C) 25 40 40 40 40 40 40 40 40 40 55 55 55 60 60 60 60 60 60 60 60 60 60 90 90 90 90 90 90 90 90 90 90 90 90 90 93 102 102 102 102 102 102 102 102 102 66 81 31 89 89 89 89 89 89 89 89 89

Tr431

Abstract: 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76
Contextual Info: I RJ 1 international, rectifier IR R e p la c e ­ m ent P a rt No. 25710 25T12 « S ? S H fcx S yty P a rt No. IR R e p la c e ­ m ent Z1012 Z1014 21016 Z1018 21020 AA138 AA140 AA142 AA2 AA20 IN34A IN34A JN34A TR-08 6F20D ZI022 Z1006 21008 7*0*0 21012 AA200

1V100RK

Abstract: 1P75 1r33 1u100 1C39RK 1V120
Contextual Info: E Republic Electronics Corp. Ceramic Capacitors for over 45 years TEMPERATURE COMPENSATING CAPACITORS • NPO through N5600 Specifications Electrical Specifications Capacitance: Measured at 1 MHz, 25°C Capacitance Tolerance: Last letter o f part number. B

Xt-150

Abstract: 1T150W-10 3T150W-3F XT150W-XX XT150
Contextual Info: up to 3 GHz ATTENUATORS TNC 150 Wans MODELS: XT 1 50VV- I'll C O R P O R A T IO N An MCE C om pany <F &: XT 1 5 0 W —XXivI Custom Mtg. hole Config. may be Added to this SPECIFICATIONS: Electrical: Frequency Range DC - 3.0 GHz 1.5 & 3 GHz Standard Freq. Values

hep 154 silicon diode

Abstract: zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp
Contextual Info: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Profes­ sional service technician. The information contained herein is based on an analysis of the published specifications of each device listed. This

MB12A35V60

Abstract: MB11A06 MB11A02V60 MB11A02V80 MB11A06V40 MB11A01V20 MB11A06V80 MB11A02V20 a06 801 MB12A10V
Contextual Info: POW EREX IN C ~ T L I> F | 0001333 7 f 7“ - z 3 - 0 7 Thyristor and Diode Modules Single Phase Diode Modules toe@ Tc Am ps (°C) Vrrm (Volts) I fsm (Am ps) trr (typica l) (lisec) VlSOL (V r us) Package Type No. 1.5 50 50 50 — 1500 A01 MB11A01V05 1.5

T35W

Abstract: transistor kt 606A 65e9 transistor sr 6863 D 2SC965 CS9011 sr1k diode KT850 TRANSISTOR st25a transistor 130001 8d
Contextual Info: NEW PRODUCTS BULLETIN SINGLE-ENDED MOLDED BRIDGES Fig. 1 International Rectifier expands its quality line of highly reliable molded \ bridges with the new 10DB series of 1 amp full-wave silicon bridge rectifiers. The single-ended, in-line configuration is suitable for PC board applications,

powerex ME30

Abstract: powerex ME20 powerex ME10
Contextual Info: 7294621 POWEREX I NC 9 1D 01830 P0ÜJEREX INC "t Ï dË D ] 7 5 ^ 2 1 D001fl3D 1 C-Series Half Control Center Tap Thyristor Modules lT AV @ TC (Amps) (°C) 40 40 40 40 40 40 40 40 102 102 102 102 102 102 102 102 102 40 40 60 60 102 89 69 60 60 60 60 60 60

CLM4041

Abstract: CLM4041CN CLM4041CS CLM4041CY CLM4041DN CLM4041DS CLM4041DY CLM4041EN CLM4041ES CLM4041EY
Contextual Info: Precision Micropower Bandgap Shunt Reference CORPORATION CLM4041 DESCRIPTION FEATURES • • • • • Low Voltage Operation . . . . . . . . . . . . . . . . . . . . . 1.225V Trimmed Bandgap Design . . . . . . . . . . . . . . . . . . . . 0.1% Wide Operating Current Range . . . . . . . . 60µA to 20mA

st178

Abstract: diode E1110 CK705 ecg semiconductor replacement guide CS1237 ME1120 TE1088 1N942 1N733A Delco DTG-110B transistor
Contextual Info: S Y L V A N IA ECG S e m ic o n d u c to r L in eREPLACES OVER 35,000 TYPES introduction The ECG line of semiconductors is designed to minimize replacement parts inventory for the tech­ nician and yet economically meet replacement needs of the wide variety of entertainment equipment

triac zd 607

Abstract: hep c6004 2sb504 2SC 968 NPN Transistor sje 607 motorola c6004 diode BY127 specifications K872 af118 Motorola Semiconductor hep c3806p
Contextual Info: & SEM ICO N DU CTO R This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Professional service techni­ cian. The information contained herein is based on an analysis of the published

40x4 lcd

Abstract: SM511 SM510 128X4 32X4 SM563
Contextual Info: MICROCOMPUTERS ROM byte RAM (bit) LCD segm ent Model No. 40x4 56 SM500 Application C o u n ters 1.2k 2 .7 k 3 V Operation 80x4 64 SM5K1 128x4 1 32 SM510 136 SM511 T im ers L C D gam es C alcu lators 128x4 4k 160x4 LCD driver series 8k 1.2k - SM512 128 SM563

transistor schottky model spice

Abstract: SPICE thyristor model 7 segment SPICE Device Model
Contextual Info: V T ID E C IN C 3 D 11386151 O M lfllD VJ900 ANALOG MASTER CHIP FAMILY T .i/2 -2 1 USER'S G UIDE Release 2.0 CONTENTS 1. INTRO DUC TIO N 1.1 Preface. 3-5 1.2 Bipolar-CMOS Comparison. 3-5

74LVC1G18

Abstract: 5pin L6 inverter cross reference guide 74LVC1G19 SN74AUP1T08 SN74AUP1T02 TC7WZU04 LVC2T45 TC7SZ044 0.3mm pitch csp package
Contextual Info: Little Logic Guide Gate Functions Signal-Switch Functions Configurable Functions Translation Functions > Availability > Quality > Service > Support > Pricing www.ti.com/littlelogic 2011 Little Logic Guide ➔ Table of Contents Overview 3 Little Logic Products by Performance

NXP 74LVC1G

Abstract: SN74LVC2G TC7SZU04 "cross-reference" 74AHC1G14 SOT-23 SCYT129E SN74AUP AUP1G00 74AUP3G17 TC7SG125 nxp Cross-reference
Contextual Info: Little Logic Guide Gates Configurables Signal Switches Translators www.ti.com/littlelogic 2012 Little Logic Guide ➔ Table of Contents Overview 3 Little Logic Products by Performance 4 Logic Migration to 1.8-V Future . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4