VG36648041BT Search Results

DQ620

Contextual Info: VS864648041.VS1664648041B 8M,16Mx64-Bit SDRAM Module Preliminary Description The VS864648041B and VS1664648041B are 8Mx64-bit and 16Mx64-bit dual-in-line synchronous dynamic RAM module DIMM . It is mounted with 8/16 pieces of 8MxB synchronous DRAM (VG36648041BT), and each in a standard 54 pin TSOP package. The VS864648041B and VS1664648041B

Contextual Info: VIS VP864648041B 8MX64-Bit SDRAM SODIMM Module Preliminary Description The VP864648041B SODIMM are 8Mx64-bit small-outline dual-in-line synchronous dynamic RAM module SODIMM . It is mounted with 8 pieces of 8Mx8 synchronous DRAM (VG36648041BT), and each in

Contextual Info: VIS Preliminary VS864648041B,VS1664648041B 8M,16MX64-Bit SDRAM Module Description The VS864648041B and VS1664648041B are 8M x 64 bit and 16M bit x 64 Dual-In-Line synchronous DRAM Module DIMM . It consists of 8/16 CMOS 8Mx8 bit synchronous DRAMs (VG36648041BT) with 4

Contextual Info: VIS Preliminary VG36648041BT CMOS Synchronous Dynamic RAM Description The device is C M O S S ynchronous D ynam ic RAM organized as 2 ,097,152 - w ord x 8 -bit x 4-bank, it is fabricated w ith an advanced subm icron C M O S te ch n o lo g y and designed to operate from a sin g ly 3.3V only

U7846

Abstract: 8MX64
Contextual Info: visti VP864648Q41B 8Mx64-Bit SDRAM SODIMM Module Preliminary Description The VP864648041B SODIMM are 8Mx64-bit small-outline dual-in-line synchronous dynamic RAM module SODIMM . It is mounted with 8 pieces of 8 Mx 8 synchronous DRAM (VG36648041BT), and each in

Contextual Info: VIS Preliminary VG36648041BT CMOS Synchronous Dynamic RAM Description The device is CMOS Synchronous Dynamic RAM organized as 2,097,152 - word x 8-bit x 4-bank. it is fabricated with an advanced submicron CMOS technology and designed to operate from a singly 3.3V only

VG36641641

Abstract: VG36641641BT VG36648041BT vg36644041
Contextual Info: VIS VG36644041BT / VG36648041BT / VG36641641BT CMOS Synchronous Dynamic RAM Description The device is CMOS Synchronous Dynamic RAM organized as 4,194,304 words x 4 bits x 4 banks, 2,097,152 words x 8 bits x 4 banks and 1,048,576 words x 16 bits x 4 banks, respectively. It is fabricated with

Contextual Info: VIS Preliminary VG36648041BT CMOS Synchronous Dynamic RAM Description The device is CMOS Synchronous Dynamic RAM organized as 2,097,152 - word x 8-bit x 4-bank. it is fabricated with an advanced submicron CMOS technology and designed to operate from a singly 3.3V only

Contextual Info: VIS Preliminary VG36648041BT CMOS Synchronous Dynamic RAM Description The device is CMOS Synchronous Dynamic RAM organized as 2,097,152 - word x 8-bit x 4-bank. it is fabricated with an advanced submicron CMOS technology and designed to operate from a singly 3.3V only

Contextual Info: VIS Preliminary VG36648041BT CMOS Synchronous Dynamic RAM Description The device is CMOS Synchronous Dynamic RAM organized as 2,097,152 - word x 8-bit x 4-bank. it is fabricated with an advanced submicron CMOS technology and designed to operate from a singly 3.3V only

VG36641641

Abstract: VG36641641BT
Contextual Info: VIS Preliminary VG36641641BT CMOS Synchronous Dynamic RAM Description The device is CMOS Synchronous Dynamic RAM organized as 1,048,576 - word x 16-bit x 4-bank. it is fabricated with an advanced submicron CMOS technology and designed to operate from a singly 3.3V only

VG36641641

Contextual Info: VIS VG366480 16 41CT CMOS Synchronous Dynamic RAM Description The device is CMOS Synchronous Dynamic RAM organized as 2,097,152 words x 8 bits x 4 banks and 1,048,576 words x 16 bits x 4 banks, repectively. It is fabricated with an advanced submicron CMOS

VG264265

Abstract: VG46VS8325AQ VM43217405CJSA VP4-64 VS46417801BTGC VG46VS8325BO VG264 VM83217400CJSA vs46417801bt VG46VS8325
Contextual Info: Product Selection Guide 1.2. Product Selection Guide DRAM DRAM Part Number 4 M h D ii V.M Description Conf./Vol. Access Time ns VG264260CJ VG26V4265CJ VG264265CJ 1 256K xl6 256Kxl6 256K xl6 5V 3,3V 5V 25/28/30/35 40/50/60 25/28/30/35 VG26(S)17400CJ VG26(S)17405CJ

VG36648041BT-7

Abstract: VG36648041CT
Contextual Info: VIS Preliminary VG36648041CT CMOS Synchronous Dynamic RAM Description The device is CMOS Synchronous Dynamic RAM organized as 2,097,152 - word x 8-bit x 4-bank. it is fabricated with an advanced submicron CMOS technology and designed to operate from a singly 3.3V only