VG36641641 Search Results

VG36641641

Abstract: VG36641641BT
Contextual Info: VIS Preliminary VG36641641BT CMOS Synchronous Dynamic RAM Description The device is CMOS Synchronous Dynamic RAM organized as 1,048,576 - word x 16-bit x 4-bank. it is fabricated with an advanced submicron CMOS technology and designed to operate from a singly 3.3V only

Contextual Info: VIS VG36644041DT / VG36648041DT / VG36641641DT CMOS Synchronous Dynamic RAM Description The VG36644041D, VG36648041D and VG36641641D are high-speed 67,108,864-bit synchronous dynamic random-access moeories, organized as 4,194,304 x 4 x 4, 2,097,152 x 8 x 4 and 1,048,576 x 16 x 4

tas t23

Contextual Info: VIS VG36644041DT / VG36648041DT / VG36641641DT CMOS Synchronous Dynamic RAM Description The VG36644041D, VG36648041D and VG36641641D are high-speed 67,108,864-bit synchronous dynamic random-access memories, organized as 4,194,304 x 4 x 4, 2,097,152 x 8 x 4 and 1,048,576 x 16 x

Contextual Info: VIS VG36644041DT / VG36648041DT / VG36641641DT CMOS Synchronous Dynamic RAM Description The VG36644041D, VG36648041D and VG36641641D are high-speed 67,108,864-bit synchronous dynamic random-access memories, organized as 4,194,304 x 4 x 4, 2,097,152 x 8 x 4 and 1,048,576 x 16 x

Contextual Info: VIS VG36644041DT / VG36648041DT / VG36641641DT CMOS Synchronous Dynamic RAM Description The VG36644041D, VG36648041D and VG36641641D are high-speed 67,108,864-bit synchronous dynamic random-access memories, organized as 4,194,304 x 4 x 4, 2,097,152 x 8 x 4 and 1,048,576 x 16 x

Contextual Info: V7S0 VS464641641B.VS864641641B 4M,8Mx64-Bit SDRAM Module Preliminary Description The VS4646441641B and VS8646441641B are 4Mx64-bit and 8Mx64-bit dual-in-line synchronous dynamic RAM module DIMM . It is mounted with 4/8 pieces of 4Mx16 synchronous DRAM (VG36641641BT), and each in a standard 54 pin TSOP package. The VS464641641B and VS864641641B

Contextual Info: VIS Preliminary VS464641641B,VS864641641B 4M,8MX64-Bit SDRAM Module Description The VS464648041B and VS864648041B are 4M x 64 bit and 8M bit x 64 Dual-In-Line synchronous DRAM Module DIMM . It consists of 4/8 CMOS 4M x 16 bit synchronous DRAMs (VG36641641BT) with 4

Contextual Info: VIS VG36644041DT / VG36648041DT / VG36641641DT CMOS Synchronous Dynamic RAM Description The VG36644041D, VG36648041D and VG36641641D are high-speed 67,108,864-bit synchronous dynamic random-access memories, organized as 4,194,304 x 4 x 4, 2,097,152 x 8 x 4 and 1,048,576 x 16 x

VG36641641DT

Abstract: VG36648041DT 4MX16 VG36644041DT
Contextual Info: VIS VG36644041DT / VG36648041DT / VG36641641DT CMOS Synchronous Dynamic RAM Description The VG36644041D, VG36648041D and VG36641641D are high-speed 67,108,864-bit synchronous dynamic random-access memories, organized as 4,194,304 x 4 x 4, 2,097,152 x 8 x 4 and 1,048,576 x 16 x

VG36641641

Abstract: VG36641641BT VG36648041BT vg36644041
Contextual Info: VIS VG36644041BT / VG36648041BT / VG36641641BT CMOS Synchronous Dynamic RAM Description The device is CMOS Synchronous Dynamic RAM organized as 4,194,304 words x 4 bits x 4 banks, 2,097,152 words x 8 bits x 4 banks and 1,048,576 words x 16 bits x 4 banks, respectively. It is fabricated with

VG36641641

Abstract: VG36641641DT VG36644041DT VG36648041DT
Contextual Info: VIS VG36644041DT / VG36648041DT / VG36641641DT CMOS Synchronous Dynamic RAM Description The VG36644041D, VG36648041D and VG36641641D are high-speed 67,108,864-bit synchronous dynamic random-access memories, organized as 4,194,304 x 4 x 4, 2,097,152 x 8 x 4 and 1,048,576 x 16 x

4020-AD

Contextual Info: VIS VP464641641B.VP864641641B 4M,8Mx64-Bit SDRAM SODIMM Module Prelim inary Description The VP464641641B and VP864641641B are 4Mx64-bit and 8Mx64-bit small-outline dual-in-line syn­ chronous dynamic RAM module SODIMM , It is mounted with 4/8 pieces of 4Mx16 synchronous DRAM

Contextual Info: VIS Preliminary VG3664802 4 1(2)AT VG3664162(4)1(2)AT CMOS Synchronous Dynamic RAM Description The device is CMOS Synchronous Dynamic RAM organized as 2,097,152-word x 8-bit x 4-bank, 4,194,304-word x 8-bit x 2-bank, 1,048,576-word x 16-bit x 4-bank, and 2,097,152-word x 16-bit x 2-bank,

VG36641641

Contextual Info: VIS VG366480 16 41CT CMOS Synchronous Dynamic RAM Description The device is CMOS Synchronous Dynamic RAM organized as 2,097,152 words x 8 bits x 4 banks and 1,048,576 words x 16 bits x 4 banks, repectively. It is fabricated with an advanced submicron CMOS

Contextual Info: VIS Preliminary VG3664802 4 1(2)AT VG3664162(4)1(2)AT CMOS Synchronous Dynamic RAM Description The device is CMOS Synchronous Dynamic RAM organized as 2,097,152-word x 8-bit x 4-bank, 4,194,304-word x 8-bit x 2-bank, 1,048,576-word x 16-bit x 4-bank, and 2,097,152-word x 16-bit x 2-bank,

Contextual Info: VIS VP464641641B,VP864641641B 4M, 8MX64-Bit SDRAM SODIMM Module Preliminary Description The VP464641641B and VP864641641B are 4Mx64-bit and 8Mx64-bit small-outline dual-in-line synchronous dynamic RAM module SODIMM . It is mounted with 4/8 pieces of 4Mx16 synchronous DRAM