1S47 Search Results

108-5127

Contextual Info: IM IS H U H I t e IS A I IT IS SUSJCCT TO W U N lU T I O i M U K : M*> INCORPORATED. D A U C E R IN B :la t es t r e v is io n . ' FT5T- LO C J /•/* TTR" D DESCRIPTION TSÄTT DUN APVD 8.HÄYB7 Y.F N. 0 ECN J-9884 REVISED REDRAWN WITH CHANGE FJOO - 1S47 - 98

Contextual Info: 1S478 Diodes General-Purpose Reference/Regulator Diode Military/High-RelN V Z Nom.(V) Reference Voltage36 @I(Z) (A) (Test Condition)2.0m Tolerance (%)10 P(D) Max. (W)250m Z(z) Max. (ê) Dyn. Imped.36 Temp Coef pp/10k9.5 Maximum Operating Temp (øC)150õ Package StyleDO-7

CA3026

Abstract: CA3052 Harris CA3019 CA3048 "rca application note" RCA CA3039 RCA ca3600 CA3019 ca3039 application Harris ota
Contextual Info: HARRIS SEMICOND SECTOR 37E D M302E71 0 0 5 1 7 3 3 T IHAS o A rrays Amplifier Arrays CA3026 CA3048 CA3052 CA3049 g n d ? — NO. 1 — V CC g n d (?)— NO . 2W — V CC NO . 1 NO. 2 92CS-1S470R2 CA3054 CA3060 CA3102 REG U LA TO R P T " OUT1 -R E G U L A T O R [""öi n L-=V+ [~3~

Contextual Info: TABLE 1 STYLE TERMINAL "A" "B" -01 -04 -05 T-1S47-01-X T-1S47-04-X T-1S47-05-X .126[3.20] .075[1.91] .065[1.65] .316[8.03] .265[6.73] .256[6.50] S A M TE C 5 2 0 P A R K E A S T B L V D , N E W A L B A N Y , IN 4 7 1 5 0 P H O N E : 8 1 2 .9 4 4 .6 7 3 3 F A X : 8 1 2 .9 4 8 .5 0 4 7

Contextual Info: TABLE 1 STYLE TERMINAL "A" "B" -01 -04 -05 T-1S47-01-XX T-1S47-04-XX T-1S47-05-XX .126[3.20] .075[1.91] .065[1.65] .316[8.03] .265[6.73] .256[6.50] S A M TE C 5 2 0 P A R K E A S T B L V D , N E W A L B A N Y , IN 4 7 1 5 0 P H O N E : 8 1 2 .9 4 4 .6 7 3 3

Contextual Info: TABLE 1 STYLE TERMINAL "A" "B" -01 -04 -05 T-1S47-01-X T-1S47-04-X T-1S47-05-X .126[3.20] .075[1.91] .065[1.65] .316[8.03] .265[6.73] .256[6.50] S A M TE C 5 2 0 P A R K E A S T B L V D , N E W A L B A N Y , IN 4 7 1 5 0 P H O N E : 8 1 2 .9 4 4 .6 7 33 F A X : 8 1 2 .9 4 8 .5 0 4 7

ECP10

Abstract: preset Potentiometers R170 preset Potentiometers carbon 2322 350
Contextual Info: ECP10 J V _ 10mm ENCLOSED CARBON PRESET Q U IC K REFERENCE D A T A Resistance range E3-series , linear law, log law on request 100 Si to 4,7 M S I * Maxim um dissipation at 40 °C at 70 °C at 85 °C 0,1 W 0,05 W 0,025 W Temperature coefficient (range 1 k£2to 2.2 M£2)

ct rac 70

Abstract: preset Potentiometers carbon 2322 350 1S473 ecp10
Contextual Info: ECP10 2322 483 A _ 10mm ENCLOSED CARBON PRESET Q U IC K R E F E R E N C E D A TA Resistance range E3-series , linear law, log law on request 100 i i to 4,7 Maximum dissipation at 40 °C at 70 °C at 85 °C 0,1 W 0,05 W 0,025 W Temperature coefficient (range 1 k£2 to 2.2 MS2)

sony led tv electronic diagram

Abstract: CXA1691 pj 88 iv AM SW IC cxa1691 Pj 455B BFCFL-455 am sw fm radio printed circuit board pfwe8 SFE10.7MA5 sfu 455b
Contextual Info: SONY CXA1691 M/S FM/AM Radio Description C X A 16 91M /S is a one-chip F M /A M radio IC designed C X A 16 91M 2 8 pin S O P Plastic C X A 16 91S 30 pin S D IP (Plastic) for radio-cassette tap e recorders. Features • Small number of peripheral components.

2n7588

Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149
Contextual Info: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.

1V100RK

Abstract: 1T330 1Z56 N2400 1C39RK N5600 1p39 1V75RK N220 N3300
Contextual Info: 1002 Reader's 6/21/99 11:36 AM Page 29 Leaded Temperature Compensating Capacitors • ■ ■ Available in NPO through N5600 dielectrics Specifically designed temperature coefficient characteristic curve Used in high shock and cross over applications Specifications

P4C1258

Abstract: O513
Contextual Info: PERFORMANCE SEMICONDUCTOR 7Ob2517 OOOOfc.41 fl • SOE D P4C1258/P4C1258L ULTRA HIGH SPEED 64K x 4 STATIC CMOS RAMS SCRAMS jA FEATURES ■ High Speed (Equal A ccess and C ycle Tim es) - 20/25/30/35 ns (Commercial) - 25/30/35/45/55 ns (M ilitary) ■ Three-State Outputs

km44c256c

Abstract: KM44C256CL-6 KM44C256CL-7 KM44C256CL-8 CP172 KM44C256CLP-7 KM44C256CLP8
Contextual Info: SAMSUNG ELECTRONICS INC b?E » • ?cìb4]i42 DD15H77 = 4T CMOS DRAM KM44C256CL 256Kx4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung KM44C256CL is a CMOS high speed 262,144 x 4 Dynamic Random Access Memory. Its

Contextual Info: International k Rectifier M SS5H SE H EXFET® Pow er M O S F E T IN T E R N A T IO N A L • • • • • • 0015M 75 333 * IN R P D -9 .4 4 4 C IR F P R E C T IF IE R Dynam ic dv/dt Rating Repetitive A valanche Rated Isolated Central Mounting Hole

transistor schottky model spice

Contextual Info: V T C INC IDE D l^ a a ^ S T O VJ800 “ 0001Ö0S 0 T-H2-21 ANALOG MASTER CHIP FAMILY USER S G U ID E Release 2.2 CONTENTS 1. INTRODUCTION 1.1 Preface. 2-5 1.2 Bipolar-CMOS Comparison. 2-5

N7448B

Abstract: LS 74LS47 BCD seven segment SN7448 ttl ic 7448 sn7446
Contextual Info: SN5446A, '47A, ’48, SN54LS47, 'LS48, 'LS49, SN7446A, '47A, '48, SN74LS47, ’ LS48, ‘LS49 BCD TO SEVEN-SEGMENT DECODERS/DRIVERS M AR C H 1 9 7 4 -R E V IS E D M AR C H 1 9 8 8 '48, LS48 feature '46A, '47A, LS47 feature LS49 feature Open-Collector Outputs

Contextual Info: RAMALE Discontinued TECHNICAL OATA COAXIAL CONECTORS PAGE iÜ ; 1 0 0 3 0 0 0 1 3 3 2 : I I F R C M •A S F iti - NH I~ A-idV HEEL OF 3000 RECEPTACLES CC:G0LD 0.2 R 2 0 9 .4 0 6 . 3 0 2 Issue : 9534 Page Series : MMS 1 / 3 0.157 Viev A “ CTT 0 .0 7 9 Viev A

ATT21C498

Abstract: 22C498 AC176
Contextual Info: June 1995 - 3s MUM Microelectronics ATT20C408: 16-Bit Interface RAMDAC Dual Clock Synthesizers PrecisionDAC Technology Features Description • 170/135 MHz speed grades — 170 MHz 2:1 multiplex 8-bit pseudocolor — 73 MHz true-color operation The ATT20C408 CMOS RAMDAC provides the

1V100RK

Abstract: 1P75 1r33 1u100 1C39RK 1V120
Contextual Info: E Republic Electronics Corp. Ceramic Capacitors for over 45 years TEMPERATURE COMPENSATING CAPACITORS • NPO through N5600 Specifications Electrical Specifications Capacitance: Measured at 1 MHz, 25°C Capacitance Tolerance: Last letter o f part number. B

hep 154 silicon diode

Abstract: zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp
Contextual Info: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Profes­ sional service technician. The information contained herein is based on an analysis of the published specifications of each device listed. This

FD6666 diode

Abstract: diode BY100 1N4Q07 BA100 diode BY164 BB139 BAY38 diode aa119 1S184 diode 1N82
Contextual Info: mil UIIAGHRISnCS [M IN IS i SDISlimiS BY B J . B AB A N I la TANDY CORPORATION Although every c are is taken with the p rep aration of this book the p u b lish ers will not be resp on sib le for any e r r o r s that might occur. 1975 I. S. B. N. 0 900162 46 5

Contextual Info: ZENER DIODES, GLASS PACKAGE, LOW CURRENT 250m W JEOEC P a rt N um ber 1N 4678 N om inal Voltage at l1T Zen a* T e st C u rra n t M axim um Voltage R egulation V V olts lr* t« A ) A V , (V olts) M axim um R e v e rs e wmMmm 26°C V , (V o lts) •« (u A )

1S516

Abstract: 18515 1D210 1s2100 1D820 1S214 1S535 1S85 1D215 1s48
Contextual Info: • Dnooaai i mia M l • " M IL • ELECTRO NICS - 1■_i. MOD. ' ■ rr ■! • • ' T ¡'ft ONE WATT OF ISOLATED OUTPUT POWER => SINGLE OR DUAL OUTPUTS ° 10 TURN POT. ADJUSTABLE OUTPUT • SEALED METAL CLOSURE • PRINTED CIRCUIT MOUNTING » LESS THAN ONE CUBIC INCH

sd1555

Abstract: s2055af 4 s2055af S2055 2SD142 2SD871 2sd820
Contextual Info: TOSHIBA 6 D eflection System 6-1 D eflection System * : U nd er developm ent 6-2 V ertical Deflection O u tp u t T ransistors '^ ^ -v ^ ^ P a ck ag e Characteristics V C E O = 160 V l c = 1A V c e o = 150 V *c* 1-5A TO -1 2 6 TO -2 0 2 2 SC 2 3 83 2SA1Q 13