1P H TRANSISTOR Search Results

Marking Code 2F

Abstract: 250-600
Contextual Info: ilAIEC Dffi SURFACE MOUNT TRANSISTORS NPN TRANSISTORS - TO-236 PACKAGE Type Number MMBT2222A IMBT3904 MMBT4401 MMBTA05 MMBTA06 MMBT5551 MMBTA42 CEO Marking Code 1P 1N 2X 1H 1G 3S 1D 40 40 40 60 80 160 300 1 ' c b o VCB h FE ® 100-300 100-300 100-300

TRANSISTOR BC 545

Contextual Info: MOTOROLA O n to r H iin r in ru iM iit SEMICONDUCTOR TECHNICAL DATA by MTDF1P02HD/D Designer’s Data Sheet M T D F 1P 0 2H D Medium Power Surface Mount Products Motorola Preferred Device TMOS Dual P-Channel Field Effect Transistor DUAL TMOS POWER MOSFET

CM603

Contextual Info: 6DI3OA-O5O 30a Ä ± / < 7 — Ì V ; Outline Drawings , < n - \ = 7 > V 'T s ^ i> z l - ; u POWER TRANSISTOR MODULE (10), H.& j I9.5~ . H .5 . 1|,& . (1p}| F e a tu re s • 7 '} — X ' f <J ' s '? $ 4 + — K r t/K • liF E ^ 'iS i.' • S6i&Jfi In c lu d in g 'F re e W h e e lin g D iode

Contextual Info: MOTOROLA O rder this docum ent by m t d f i p o 2 h d / d SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M T D F 1P 02H D Medium Power Surface Mount Products Motorola Preferred Device TMOS Dual P-Channel Field Effect Transistor Micro8™ devices are an advanced series of power MOSFETs

Contextual Info: Datasheet, V1.2, 06 Feb 2007 CCM-PFC ICE1PCS02 I CE 1P CS 02G Standalone Power Factor Correction PFC Controller in Continuous Conduction Mode (CCM) with Input Brown-Out Protection P owe r M a n a g e m e n t & S u p p l y N e v e r s t o p t h i n k i n g .

Contextual Info: Datasheet, V1.3, 06 Feb 2007 CCM-PFC ICE1PCS01 I CE 1P CS 01G Standalone Power Factor Correction PFC Controller in Continuous Conduction Mode (CCM) P owe r M a n a g e m e n t & S u p p l y N e v e r s t o p t h i n k i n g . CCM-PFC Revision History: 2007-02-06

BT4403

Abstract: MBT3906
Contextual Info: Surface Mount Transistors NFN Transistors/SOT23 M a rk in g C ode* V CEO 1P 1N 2X 40 40 40 M M B TA 05 M M B TA 06 M M B T5551 1H 1G 3S M M B T A 42 1D Type N um ber M M BT2222A IM B T /M M B T 3 9 0 4 M M B T4401 h FE @ VCE/IC V CE SAT @ Ic /lß fT @ V ce/I c

Contextual Info: NRND: Not recommended for new designs. TE X AS I NS TRUM E NTS - P RO DUCTION D ATA Stellaris LM3S1P51 Microcontroller D ATA SHE E T D S -LM3S 1P 51 - 1 3 4 4 2 . 2 5 4 9 S P M S 219K C o p yri g h t 2 0 07-2012 Te xa s In stru me n ts In co rporated

Contextual Info: NRND: Not recommended for new designs. TE X AS I NS TRUM E NTS - P RO DUCTION D ATA Stellaris LM3S1P51 Microcontroller D ATA SHE E T D S -LM3S 1P 51 - 1 3 4 4 2 . 2 5 4 9 S P M S 219K C o p yri g h t 2 0 07-2012 Te xa s In stru me n ts In co rporated

BUT98

Contextual Info: NRND: Not recommended for new designs. TE X AS I NS TRUM E NTS - P RO DUCTION D ATA Stellaris LM3S1P51 Microcontroller D ATA SHE E T D S -LM3S 1P 51 - 1 3 4 4 2 . 2 5 4 9 S P M S 219K C o p yri g h t 2 0 07-2012 Te xa s In stru me n ts In co rporated

Contextual Info: TE X AS I NS TRUM E NTS - P RO DUCTION D ATA Stellaris LM3S1P51 Microcontroller D ATA SHE E T D S -LM3S 1P 51 - 11 4 2 5 C o p yri g h t 2 0 07-2012 Te xa s In stru me n ts In co rporated Copyright Copyright © 2007-2012 Texas Instruments Incorporated All rights reserved. Stellaris and StellarisWare® are registered trademarks of Texas Instruments

564in2

Abstract: CTC 1351 transistor
Contextual Info: TE X AS I NS TRUM E NTS - P RO DUCTION D ATA Stellaris LM3S1P51 Microcontroller D ATA SHE E T D S -LM3S 1P 51 - 11 4 2 5 C o p yri g h t 2 0 07-2012 Te xa s In stru me n ts In co rporated Copyright Copyright © 2007-2012 Texas Instruments Incorporated All rights reserved. Stellaris and StellarisWare® are registered trademarks of Texas Instruments

transistor BR A 94

Abstract: bcw 25 transistor bcw 94 b transistor A 94 bcw 95 transistor transistor BCW 94 c bcw94b BCW95 BCW95B bcw94A
Contextual Info: BCW94 A.B.C BCW95A.B NPN SILICO N TRANSISTOR, EPIT A X IA L PLANAR T R A N S IS T O R N P N S IL IC IU M , P L A N A R E P IT A X IA L • LF Amplification Amplification B F CE0 I 40 V BCW 94 160 V BCW 95 ■c °<4 A h ,1P 100-200 (A <B) (C) (1 5 0 m A 7 w iS 1 5 0 ' 3 0 0

Contextual Info: TE X AS I NS TRUM E NTS - P RO DUCTION D ATA Stellaris LM3S1P51 Microcontroller D ATA SHE E T D S -LM3S 1P 51 - 1 5 8 5 2 . 2 7 4 3 S P M S 219L C o p yri g h t 2 0 07-2014 Te xa s In stru me n ts In co rporated Copyright Copyright © 2007-2014 Texas Instruments Incorporated All rights reserved. Stellaris and StellarisWare® are registered trademarks of Texas Instruments

LMBT2222ATT1G

Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistor NPN Silicon LMBT2222ATT1G S-LMBT2222ATT1G These transistors are designed for general purpose amplifier applications. They are housed in the SC−89 package which is designed for low power surface mount applications.

RT1*p136x

Abstract: RT1P136C RT1P136S RT1N136X RT1P136M RT1P136T2 RT1P136U RT1P136X p136x
Contextual Info: RT1 P I 36X SERIES Tr„ „ J 7" * For S w itching Application Silicon PNP Epitaxial Type DESCRIPTION OUTLINE RT1P136X ¡1 a one chip transistorwith built-in bias resistor.NPN type is RT1N136X UNIT mm DRAWING RT1P136U R T 1P 136C 0S5 15 :¿S5 FEATURE •Built-in bias resistor [R1 = 1kO,R2-tOkí?5.

TRANSISTOR 1P

Abstract: 1p TRANSISTOR NPN Silicon Epitaxial Planar Transistor 700 v MITSUBISHI FERRITE transistor 1P F mitsubishi rf transistor 1P t 2SC4989 1P RF uhf power transistor 50W
Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC4989 NPN EPITAXIAL PLANAR TYPE D ESC R IPTIO N 2SC4989 is a silicon NPN epitaxial planar type transistor O UTLINE DRAW ING Dimension in mm specifically designed for high power amplifiers in UHF band. R1 FEA TU R ES • High power output and high gain : Po S 65W, Gpe S 5.1 dB,

Contextual Info: M ITSUBISHI RF POW ER TRAN SISTO R 2SC3404 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE D RAW IN G D im ensions in mm 2 S C 3 4 0 4 is a silicon NPN epitaxial planar type transistor specifi­ cally designed for V H F power amplifier applications. FEATU RES

TRANSISTOR 1P

Abstract: TRANSISTOR code marking 1P 3 marking code 1P SC-89 1P surface mount transistor
Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistor NPN Silicon LMBT2222ATT1G 3 These transistors are designed for general purpose amplifier applications. They are housed in the SC−89 package which is designed for low power surface mount applications.

transistor marking 1p Z

Abstract: 2N7002W
Contextual Info: PRELIMINARY 2N7002W VISHAY N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Ì LITEM ZI POWER SEMICONDUCTOR Features Low On-Resistance: 2 .5 Q. Low Threshold: 2.1V Low Input Capacitance: 22pF Fast Switching Speed: 7.0ns Low Input/Output Leakage Ultra-Small Surface Mount Package

2N7002W

Abstract: transistor marking 1p
Contextual Info: 2N7002W VISHAY N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR /UTEMir powefsehconwjctor/ I Features Low On-Res¡stance: 2.5Q Low Threshold: 2.1V Low Input Capacitance: 22pF Fast Switching Speed: 7.0ns Low Input/Output Leakage Ultra-Small Surface Mount Package

Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC4989 NPN EPITAXIAL PLANAR TYPE DESCRIPTION OUTLINE DRAWING 2SC4989 is a silicon NPN epitaxial planar type transistor Dimension in mm specifically designed for high power amplifiers in UHF band. FEATURES • High power output and high gain: P o^65W , GpeS5.1dB,

transistor k72

Contextual Info: NEW PRODUCT 2N7002DW DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR POWER SEMICONDUCTOR Features • • • • • • • Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage

Contextual Info: M ITSUBISHI RF POW ER TRAN SISTO R 2SC3404 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE D RAW IN G D im ensions in mm 2 S C 3 4 0 4 is a silicon NPN epitaxial planar type transistor specifi­ cally designed for V H F power amplifier applications. FEATU RES