2SC4989 Search Results

transistor 5d

Abstract: transistor 1P t
Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC4989 NPN EPITAXIAL PLANAR TYPE DESCRIPTION OUTLINE DRAWING 2SC4989 is a silicon NPN epitaxial planar type transistor Dimension in mm specifically designed for high power amplifiers in UHF band. R1 FEATURES • High power output and high gain: P o^65W , GpeS5.1dB,

Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC4989 NPN EPITAXIAL PLANAR TYPE DESCRIPTION OUTLINE DRAWING 2SC4989 is a silicon NPN epitaxial planar type transistor Dimension in mm specifically designed for high power amplifiers in UHF band. FEATURES • High power output and high gain: P o^65W , GpeS5.1dB,

TRANSISTOR 1P

Abstract: 1p TRANSISTOR NPN Silicon Epitaxial Planar Transistor 700 v MITSUBISHI FERRITE transistor 1P F mitsubishi rf transistor 1P t 2SC4989 1P RF uhf power transistor 50W
Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC4989 NPN EPITAXIAL PLANAR TYPE D ESC R IPTIO N 2SC4989 is a silicon NPN epitaxial planar type transistor O UTLINE DRAW ING Dimension in mm specifically designed for high power amplifiers in UHF band. R1 FEA TU R ES • High power output and high gain : Po S 65W, Gpe S 5.1 dB,

C42V5964

Abstract: MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776
Contextual Info: Please Read “Notes” First! Contents Notes Contact Addresses MITSUBISHI ELECTRIC CORPORATION Contents Si Devices GaAs Devices Optical Devices Applications Quality Assurance and Reliability Testing Optical Modules Top Page © MITSUBISHI ELECTRIC CORPORATION

2sc2538

Abstract: hpa b 110 2SC2S39 2SC5125 2sc4624 2SC2094
Contextual Info: 150MHz B and 13.5V S eries fo r M obile Radios <Tc = 25*C> Max. ratings Application 2SC20S3 HPA S ,NPN,EP VM ° 40 2SC1970 HPA S ,NPN,EP 40 2SC730 3K* V Structure •' - 0.3 4 0.6 & Rttv-c 5 + 150 25 fc /w 0.61 + 135 183 w 4 Pç W) Ve (min) {%) {«ax) i* A )