1N5817 SMA Search Results
1N5817 SMA Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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CO-174SMAX200-003 |
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Amphenol CO-174SMAX200-003 SMA Male to SMA Male (RG174) 50 Ohm Coaxial Cable Assembly 3ft | |||
CO-316SMAX200-001 |
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Amphenol CO-316SMAX200-001 RG316 High Temperature Teflon Coaxial Cable - SMA Male to SMA Male 1ft | |||
CO-174SMAX200-002 |
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Amphenol CO-174SMAX200-002 SMA Male to SMA Male (RG174) 50 Ohm Coaxial Cable Assembly 2ft | |||
CO-058SMAX200-001 |
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Amphenol CO-058SMAX200-001 SMA Male to SMA Male (RG58) 50 Ohm Coaxial Cable Assembly 1ft | |||
CO-174SMAX200-005 |
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Amphenol CO-174SMAX200-005 SMA Male to SMA Male (RG174) 50 Ohm Coaxial Cable Assembly 5ft |
1N5817 SMA Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: POWER SCHOTTKY RECTIFIERS 1N5817 1N5818 1N5819 1A, Up to 40V FEATURES DESCRIPTION • Very Low Forward Voltage 0.45V max @ 1A for the 1N5817 • Low Stored Charge, Majority Carrier Conduction • Economical, Convenient Plastic Package • Small Size The 1N5817, 1N5818 and 1N5819 series |
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1N5817 1N5818 1N5819 1N5817) 1N5817, 1N5819 | |
philips diode PH 33D
Abstract: PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m
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1N821 1N821A 1N823 1N823A 1N825 1N825A 1N827 1N827A 1N829 1N829A philips diode PH 33D PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m | |
philips diode PH 33D
Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
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1N5817 1N821 1N5818 1N821A 1N5819 philips diode PH 33D philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE | |
marking A4t sot23
Abstract: PH C5V1 T2D 79 diode C18 ph diode T2D DIODE transistor marking codes A4p 3Ft SOT23 A1t SOT23 A4T SOT23 transistor t04 sot23
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1N5817 1N821 1N5818 1N821A 1N5819 marking A4t sot23 PH C5V1 T2D 79 diode C18 ph diode T2D DIODE transistor marking codes A4p 3Ft SOT23 A1t SOT23 A4T SOT23 transistor t04 sot23 | |
1N5819 SOD-323Contextual Info: APPROVE SHEET Customer: Customer Part Number: 1N5817~1N5819 PanJit Part Number: 1N5817~1N5819 Approver Signature: APPROVED BY: Clock Huang PREPARED BY: Ivy Deng DATE: APR.11.2005 DATE: APR.11.2005 PANJIT INTERNATIONAL INC. TEL:886-7-6213121 FAX:886-7-6213129 |
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1N5817 1N5819 1N5819 SOD-323 | |
1N5817-1N5819
Abstract: 1N5817 1N5818 1N5819 fairchild 1N5817
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1N5817-1N5819 1N5817 1N5819 DO-41 1N5818 1N5817-1N5819 1N5818 1N5819 fairchild 1N5817 | |
1N5817-1N5819
Abstract: 1N5817 1N5818 1N5819 semiconductor band color code
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1N5817-1N5819 1N5817 1N5819 DO-41 1N5817-1N5819 1N5818 1N5819 semiconductor band color code | |
Contextual Info: Formosa MS Schottky Barrier Rectifier 1N5817 THRU 1N5819 List List. 1 Package outline. 2 |
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1N5817 1N5819 125oC MIL-STD-750D METHOD-1051 METHOD-1056 METHOD-4066-2 | |
1N5819
Abstract: 1N5817 - 1N5819 1N5817-1N5819 1N5817 1N5818
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1N5817-1N5819 1N5817 1N5819 DO-41 1N5819 1N5817 - 1N5819 1N5817-1N5819 1N5818 | |
1N5817
Abstract: 1N5818 1N5819 diode cross reference 1N5819
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1N5817 1N5819 MIL-STD-750D METHOD-1051 125oC METHOD-1056 METHOD-4066-2 1000hrs. 1N5818 1N5819 diode cross reference 1N5819 | |
Contextual Info: 1N5817, 1N5818, 1N5819 www.vishay.com Vishay General Semiconductor Schottky Barrier Plastic Rectifier FEATURES • Guardring for overvoltage protection • Very small conduction losses • Extremely fast switching • Low forward voltage drop • High frequency operation |
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1N5817, 1N5818, 1N5819 22-B106 DO-204AL DO-41) 2002/95/EC. 2002/95/EC 2011/65/EU. | |
1N5819 General Semiconductor
Abstract: 1N5817 1N5818 1N5819 DO-204AL JESD22-B102D J-STD-002B
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1N5817, 1N5818, 1N5819 DO-204AL DO-41) 2002/95/EC 2002/96/EC 08-Apr-05 1N5819 General Semiconductor 1N5817 1N5818 1N5819 DO-204AL JESD22-B102D J-STD-002B | |
1N5817
Abstract: 1N5818 1N5819 DO-204AL JESD22-B102 J-STD-002 1N5819 General Semiconductor 1N5819 Vishay
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1N5817 1N5819 DO-204AL DO-41) 2002/95/EC 2002/96/EC 18-Jul-08 1N5818 1N5819 DO-204AL JESD22-B102 J-STD-002 1N5819 General Semiconductor 1N5819 Vishay | |
1N5817 diode
Abstract: datasheets diode 1n5819 1/1N5819 1n5819 data sheet datasheets diode 1n5818 1N5817 1N5818 1N5819 DO-204AL JESD22-B102D
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1N5817, 1N5818, 1N5819 DO-204AL DO-41) 2002/95/EC 2002/96/EC 08-Apr-05 1N5817 diode datasheets diode 1n5819 1/1N5819 1n5819 data sheet datasheets diode 1n5818 1N5817 1N5818 1N5819 DO-204AL JESD22-B102D | |
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specifications on 1n5818Contextual Info: 1N5817 thru 1N5819 Vishay General Semiconductor Schottky Barrier Rectifiers FEATURES • Guardring for overvoltage protection • Very small conduction losses • Extremely fast switching • Low forward voltage drop • High frequency operation DO-204AL DO-41 |
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1N5817 1N5819 DO-204AL DO-41) 2002/95/EC 2002/96/EC J-STD-002 JESD22-B102 specifications on 1n5818 | |
1N5819
Abstract: 1N5817 1N5818 DO-204AL JESD22-B102D J-STD-002B
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1N5817 -1N5819 DO-41 DO-204AL) DO-204AL DO-41) J-STD-002B JESD22-B102D 1N5819 1N5818 JESD22-B102D | |
1n5819 smd
Abstract: 1N5817 smd 1N5818 smd 1N5819 SMA 1N5819 SS14 1N5817-1N5819 maximum current rating of diodes SS12 1N5817 1n5817 sma 1N5817 diode
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1N5817-1N5819 DO-214AC 1N5817 1N5818 1N5819 1n5819 smd 1N5817 smd 1N5818 smd 1N5819 SMA 1N5819 SS14 1N5817-1N5819 maximum current rating of diodes SS12 1N5817 1n5817 sma 1N5817 diode | |
UF4007 SMD
Abstract: 1N5822 SMD smd UF4007 SS34 DO-214AC 1n5408 smd SMD DO-214AC SMA UF4007 smd package P6KE33a 1N5822 SMD PACKAGE 1N4004 SMD
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DO-204AC DO-15) 1N5817 DO-204AL DO-41) 1N5818 1N5819 UF4007 SMD 1N5822 SMD smd UF4007 SS34 DO-214AC 1n5408 smd SMD DO-214AC SMA UF4007 smd package P6KE33a 1N5822 SMD PACKAGE 1N4004 SMD | |
1n5819 vishay makeContextual Info: 1N5817 thru 1N5819 Vishay General Semiconductor Schottky Barrier Rectifier FEATURES • Guardring for overvoltage protection • Very small conduction losses • Extremely fast switching • Low forward voltage drop • High frequency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 |
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1N5817 1N5819 22-B106 2002/95/EC 2002/96/EC DO-204AL DO-41) 2011/65/EU 1n5819 vishay make | |
Contextual Info: 1N5817, 1N5818, 1N5819 Low drop power Schottky rectifier Features • Very small conduction losses ■ Negligible switching losses ■ Extremely fast switching ■ Low forward voltage drop ■ Avalanche capability specified A K DO-41 Description Axial Power Schottky rectifier suited for Switch |
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1N5817, 1N5818, 1N5819 DO-41 DO-41 | |
Contextual Info: Product specification 1N5817-1N5819 DO-214AC SMA Unit: mm 3.93 3.73 4.597 3.988 1.575 1.397 Features 1 2 For Surface Mounted Applications Metal Silicon Junction, Majority Carrier Conduction 2.896 2.489 1.67 1.47 2.38 2.18 5.49 5.29 5.283 4.775 Low Power Loss, High Efficiency |
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1N5817-1N5819 DO-214AC 1N5817 1N5818 1N5819 | |
1n5819Contextual Info: 1N5817, 1N5818, 1N5819 Low drop power Schottky rectifier Features • Very small conduction losses ■ Negligible switching losses ■ Extremely fast switching ■ Low forward voltage drop ■ Avalanche capability specified A K DO-41 Description Axial Power Schottky rectifier suited for Switch |
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1N5817, 1N5818, 1N5819 DO-41 DO-41 1n5819 | |
Contextual Info: 1N5817 thru 1N5819 Vishay General Semiconductor Schottky Barrier Rectifier FEATURES • Guardring for overvoltage protection • Very small conduction losses • Extremely fast switching • Low forward voltage drop • High frequency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 |
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1N5817 1N5819 22-B106 DO-204AL DO-41) 2002/95/EC 2002/96/EC 2002/95/EC. | |
1N5817
Abstract: 1N5818 1N5819 DO-204AL J-STD-002
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1N5817 1N5819 22-B106 DO-204AL DO-41) 2002/95/EC 2002/96/EC 11-Mar-11 1N5818 1N5819 DO-204AL J-STD-002 |