1N4944GP Search Results

BYT01-200

Abstract: UF54002 RS8KT BYT30P800 MR918 UF54004 PLR818 BYW99P-150 BYW100-100 1N4946 cross reference
Contextual Info: RECTIFIER DIODES CROSS REFERENCE INDUSTRY PART NUMBER 1N4942 1N4942GP 1N4944 1N4944GP 1N4946 1N4946GP 1N4947 1N4947GP 1N4948 1N4948GP 1N5615 1N5615GP 1N5617 1N5617GP 1N5619 1N5619GP 1N5621 1N5621GP 1N5623 1N5623GP BYD33D BYD33G BYD33J BYD33K BYD33M BYR29600

Contextual Info: 1N4942GP, 1N4944GP, 1N4946GP, 1N4947GP, 1N4948GP www.vishay.com Vishay General Semiconductor Glass Passivated Junction Fast Switching Plastic Rectifier FEATURES • Superectifier structure for high reliability condition • Cavity-free glass-passivated junction

FR107 SOD-123

Contextual Info: TM Micro Commercial Components FAST RECOVERY RECTIFIERS Average Forward Forward Peak Current Working Peak Surge Current @ Half-Wave Reverse Voltage @ 8.3mS MCC Resistive Load Superimposed Part Number 60Hz Maximum Reverse Current @ VRWM Maximum Forward Voltage

1N4942GP

Abstract: 1N4944GP 1N4948GP DO-204AL JESD22-B102D J-STD-002B
Contextual Info: 1N4942GP thru 1N4948GP Vishay General Semiconductor Glass Passivated Junction Fast Switching Rectifier Major Ratings and Characteristics IF AV VRRM IFSM trr IR VF Tj max. 1.0 A 200 V to 1000 V 25 A 150 ns, 250 ns, 500 ns 1.0 µA 1.3 V 175 °C d* e t n

Contextual Info: MCC FAST RECOVERY RECTIFIERS OPERATING/STORAGE TEMPERATURE RANGE: -55°C TO 150°C Average Forward Maximum Working Forward Peak Current @ HalfReverse Current Peak Surge Current Wave @ VRWM Reverse @ 8.3mS MCC Resistive Load Voltage Superimposed @ 25°C TL*

Contextual Info: MCC TM Micro Commercial Components Features • • • • • • Halogen free available upon request by adding suffix "-HF" Low Leakage Current and Fast Switching Epoxy meets UL 94 V-0 flammability rating Moisture Sensitivity Level 1 Glass Passivated Junction

Contextual Info: • i m m ChMltworth, CA m Micmsemi 1N4942GP P rogress P ow ered b y T echnology 9261 Owensmouth Ave, Chatsworth, Ca 91311 Phone: 818 701-4933 Fax: (818) 701-4939 Features • • • • • thru 1N4948GP 1 Amp G lass Passivated Fast Recovery Rectifier

1N5498

Abstract: CA542 AP6KE91A CGJ-1 DF06S 214 H AG 48 2KBP10M I1404 P6KE200 602 CA-592 BZWO4P
Contextual Info: NUMERICAL INDEX 1.5KA6.8.A .564 1.5KE22C.CA. 592 1.5KE170.A. 592 1N4383GP. 1.5KA7.5.A.564 1.5KE24.A.592 1ÆKE170C.CA.592 1N4384GP.244

TF152

Abstract: AGP15-800 GI250-1 GI250-2 GI250-3 GI250-4 GP02-20 GP02-25 GP02-30 AGP15-200
Contextual Info: Controlled Avalanche Superectifiers Part No. AGP15-200 AGP15-400 AGP15-600 AGP15-800 CrossReference - Operating Temperature: -65 o C to 175oC Max. Forward Max. Reverse Voltage @ 25 o C Current @ 25 o C @ Rated Io @ Rated PIV Max. Average Rectified Current

stpr16

Abstract: MUR480E 340L-02 PK MUR 460 BV 202 0158 1N541 AK SOT23 STPS2045 SS33 SMB A14F diode
Contextual Info: MURB1620CT Preferred Device SWITCHMODE Power Rectifier D2PAK Power Surface Mount Package Designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • • • •

b2545 transistor

Abstract: TO220 MUR460 BYV43-45 MUR 460 0801 MR756RL MUR420 diode b2535 equivalent transistor B2535 6A10 BL diode diode A14A surface
Contextual Info: MBR2535CT, MBR2545CT MBR2545CT is a Preferred Device SWITCHMODE Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Guardring for Stress Protection

MR2835S equivalent

Abstract: A14F diode 1n5404 diode FE16A MUR860 equivalent MUR1620CT MUR420 diode usd745c equivalent MBRD360 PR1502
Contextual Info: MBR6045PT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected

Schottky Diode 039 B34

Abstract: S4 84a DIODE schottky MELF ZENER DIODE color bands blue diode RGP 15J sb050 d 331 s104 diode 87a 252 B34 SMD ZENER DIODE SB050 transistor equivalent MELF DIODE color bands smd transistor P2D
Contextual Info: VISHAY INTERTECHNOLOGY , INC . INTERACTIVE data book rectifiers vishay general semiconductor vse-db0001-0809 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents

1N4947GP-E3/23

Contextual Info: 1N4942GP thru 1N4948GP Vishay General Semiconductor Glass Passivated Junction Fast Switching Rectifier FEATURES • Superectifier structure for High Reliability condition • Cavity-free glass-passivated junction • Fast switching for high efficiency ed*

Contextual Info: MCC TM Micro Commercial Components Features • • • • • Low Leakage Current and Fast Switching Epoxy meets UL 94 V-0 flammability rating Moisture Sensitivity Level 1 Glass Passivated Junction Lead Free Finish/RoHS Compliant Note1 ("P"Suffix designates

1N4942GP

Abstract: 1N4948GP DO-204AL J-STD-002
Contextual Info: 1N4942GP thru 1N4948GP Vishay General Semiconductor Glass Passivated Junction Fast Switching Rectifier FEATURES • Superectifier structure for high reliability condition • Cavity-free glass-passivated junction SUPERECTIFIER • Fast switching for high efficiency

MUR1560 equivalent

Abstract: 1N4936 equivalent MUR1100E equivalent 1N5404 equivalent MUR620CT equivalent mur420 equivalent MUR1620CT equivalent BYV19-45 MUR1660CT equivalent MUR1520 equivalent
Contextual Info: Index and Cross Reference The following table represents an index and cross reference guide for all rectifier devices which are either manufactured directly by ON Semiconductor or for which ON Semiconductor manufactures a suitable equivalent. Where the ON

mur1650

Abstract: T4 SOD-123 1N4004 MR2510 1N2069 SES5001 mur420 equivalent CT PR1504 equivalent for fr302 diode mur 460 switch diode A14A surface mount
Contextual Info: MBRB1045 Preferred Device SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and

1n4948gp

Abstract: 1N4948G
Contextual Info: 1N4942GP thru 1N4948GP Vishay General Semiconductor Glass Passivated Junction Fast Switching Rectifier Major Ratings and Characteristics IF AV VRRM IFSM trr IR VF Tj max. 1.0 A 200 V to 1000 V 25 A 150 ns, 250 ns, 500 ns 1.0 µA 1.3 V 175 °C d* e t n

1N4942GP

Abstract: 1N4944GP 1N4946GP 1N4947GP 1N4948 1N4948GP
Contextual Info: 1N4942GP THRU 1N4948GP Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 Features • • • • • 1 Amp Glass Passivated Fast Recovery Rectifier 200 - 1000 Volts Low Leakage Current Metalurgically Bonded Construction

transistor U1620R

Abstract: fast recovery diode ses5001 MUR1620CT equivalent PK MUR 460 DIODE PK MUR 460 transistor mbr4045pt 1N2069 MBRD360 Fast Recovery Diode, 24 Amperes, 600 Volts, Button Type STPS20h100
Contextual Info: MUR1620CTR Preferred Device SWITCHMODE Dual Ultrafast Power Rectifier . . . designed for use in negative switching power supplies, inverters and as free wheeling diodes. Also, used in conjunction with common cathode dual Ultrafast Rectifiers, makes a single phase full–wave

A14F diode

Abstract: DIODE marking ES2D V352 DC "Transient Voltage Suppressor" diode A14A rg3j 005 SR1002 0010C 357D-01 1N2069
Contextual Info: MURS220T3 Preferred Device Surface Mount Ultrafast Power Rectifiers Ideally suited for high voltage, high frequency rectification, or as free wheeling and protection diodes in surface mount applications where compact size and weight are critical to the system.

equivalent components of diode 1N5399

Abstract: diode ses5001 6A10 BL diode equivalent for fr302 diode equivalent components of diode her104 fe8b diode FE8D gi756 diode A14F diode MUR420 diode
Contextual Info: MBR6045WT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected

PK MUR 460

Abstract: pk mur460 PK MUR460 1110 gi756 diode carrier 30bq015 USD1120 0525 Transient Voltage Suppressors diode A14A surface SS14 SOD123 MBRD360
Contextual Info: MBR340 Preferred Device Axial Lead Rectifier . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low–voltage,