1N221 Search Results

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

1N1542

Abstract: 1n2238A
Contextual Info: rectifiers 10 Part A 150°C PIV rnA 150°C 6 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 3 3 3 3 3 3 3 5 5 5 5 5 5 5 5 5 5 5 5 5 600 50 100 150 200 300 400 500 600 50 100 200 300 400 500 600 50 50 100 100 200 240 200 400 480 400 600 720 600 50 200 300 400 500 600 500

Contextual Info: STANDARD RECOVERY RECTIFIERS STUD BASE DO-4 & DO-5 lQ RATING TO 60 AMPS FEATURES: DESCRIPTION • Hermetic Seal This is a series of general purpose rectifiers with average forward current ratings up to 60 Amps. They are for general purpose use in power supply and other rectification applications.

IN34A

Abstract: 1N215 1N21 diode 1N207 1N218 1N87 uua 170 1N271 1N200 1N137B
Contextual Info: GENERAL PURPOSE DIODES, C1 CAN minimum Breakdown Voltage ISl Part Number i i i i l i l i Continuous Average Forward Current h |m * ] Maximum Reverse Current 1. tlA T, = 2 5 1C T.= 100 C V* (Volts) 40 20 50 60 0.03 0.01 1N200 1N2Q1 1N202 1N203 1N204 7.5

1N2222A

Abstract: 1N2222 1n15b 1n2268 ln2244a 1n15b1 1N223B LM3661TL-1.25 LN2222 1N15
Contextual Info: SEMICON COMPONENTS INC PflE D 6135157 00D0533 5 STANDARD RECOVERY RECTIFIERS STUD BASE DO-4 lQ RATING TO 16 AMPS 1rRR TYPE P BV VF V TEMP CURREKT C AMPERES TEMP TEMP AMPS NUMBER VOLTS 1N1537 1N1539 1N1540 1N1541 1N1542 50 160 200 300 400 1.5 1.5 1.5 1.5

1N2222A

Abstract: 1n2222 IN2071A 1N3934 1N3578 IN222 IN1342 IN5054 IN5053 1N3549
Contextual Info: xcmicron - _ SB._ 27E » • MäbTEMb 00005=17 MäbTEMb O OOOST? s em ic o n d u c to r s S e m itr o n ic s C o r p . IN T E X / S E M IT R O N IC S silicon rectifiers cont’d miniature axial lead silicon rectifiers T»» 1N3241 1N3242 1N3243 1N3244

1n2222 general diode

Abstract: 1N2222 1n22 1N2218 1N2219 0880 1N2024 1N2025 1N2027 1N2029
Contextual Info: 3869720 GENERAL D IO D E CO RP GENERAL DIODE CORP 86D ~ flb 00326 DE | D T - o / ' f f OODDBSb 7 | ~ ST U D M O U N T ED SILICON POW ER RECTIFIERS . . . cont'd 1 % 10 @ 150 10 @ 150 1 @ 150 1 @ 150 1 @ 150 5 @150 5 @150 0.5 @ 150 0.5 @ 150 0.5 @ 150 1 @ 150

1N3610

Abstract: 1N1118 1N2222 1N1502 1N1120 1N39 1N12068 HA 12058 1N1119 1N1227
Contextual Info: STANDARD RECOVERY RECTIFIERS STUD BASE DO-4 & DO-5 lQ RATING TO 60 AMPS FEATURES: DESCRIPTION • Hermetic Seal • High Temperature Operation • Metallurgical^ Bonded This is a series of general purpose rectifiers with average forward current ratings up to 60 Amps. They are for general purpose use in

LT3973-3.3

Abstract: IN4012 in401 IN1730 IN1118 IN3288 in2063 IM361 IN-17 1N1731
Contextual Info: ^ discrete devices | jemitronicr hot line TO LL FREE NUM BER 800-777-3960 silicon rectifiers stud mounted silicon power rectifiers DO-4 case style — Maximum Peak Reverse Voltage volts Type Maximum Average Forward Current (Amps) @ Case Temp. (°C ) Maximum

1n15b

Contextual Info: discrete devices jemitronicr hot line TOLL FREE NUMBER 800-777-3960 silicon rectifiers stud mounted silicon power rectifiers DO-4 case style — Type M axim um Peak Reverse Voltage volts Maxim um Average Forward C urrent (Amps) @ Case Tem p. (°C ) 1N1203

1N21 diode

Abstract: 31N20 diode 1n222 1N222 1N212 1N218 2091-N 1N21
Contextual Info: I n ter n a tio n a l 1N200 S e m ic o n d u c to r , I n c . 1N222 thru GENERAL PURPOSE DIODES SINGLE ENDED CAN ELECTRICAL CHARACTERISTICS at 25°C JEDEC Part Number M a x im u m Rever se W orking V olta g e B reakdow n Voltage F o rw a rd C u rr e n t 25°C

LG color tv Circuit Diagram schematics

Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

1N4202

Abstract: 1N1418 in3997 1N1744 1N4198 1n4235 1N4200 1N3442 1N2979 1N401
Contextual Info: 10 WATT, M e t a l JEDEC TYPE , NUMBERt NOMINAL ZENER VOLTAGE Vz Case DO-4, 10-32 Stud TEST CURRENT IZT MAXIMUM ZENER IMPEDANCE IZK ZZT @ IZT ZZK @ MAXIMUM REVERSE LEAKAGE CURRENT IR @ VR @25"C VOLTS mA Ohms Ohms 1N3993 1N3994 1N3995 1N3996 39 43 47 5 1

hep 154 silicon diode

Abstract: zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp
Contextual Info: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Profes­ sional service technician. The information contained herein is based on an analysis of the published specifications of each device listed. This

RCA SK CROSS-REFERENCE

Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
Contextual Info: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered

2N2222A mps

Abstract: 2N512AB 2n2222 mps 1N1096 1N589 1n4007 - 2n4001 2N698 SCR 1N233A 1N20461 2N3304
Contextual Info: ¿S c iscre:e devices ^ ! jemitronicr hot line TOLL FREE NUMBER 800-777-3960 alpha-numeric index Type 1N34A 1N35 1N36 1N38.A.B 1N40 1N42 1N44/ 1N51 1N52,A 1N54,A 1N55AB 1N56,A 1N57,A 1N58.A 1N60.A 1N61 1N62 1N63,A 1N65 1N66.A 1N67.A 1N68.A 1N69,A 1N70,A 1N71

transistor c2060

Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
Contextual Info: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,

FD6666 diode

Abstract: diode BY100 1N4Q07 BA100 diode BY164 BB139 BAY38 diode aa119 1S184 diode 1N82
Contextual Info: mil UIIAGHRISnCS [M IN IS i SDISlimiS BY B J . B AB A N I la TANDY CORPORATION Although every c are is taken with the p rep aration of this book the p u b lish ers will not be resp on sib le for any e r r o r s that might occur. 1975 I. S. B. N. 0 900162 46 5

1N1120

Abstract: 1N2484 1N342 1N2226
Contextual Info: - x _ S B . _ _ _ c m i c r o 2 7 E » MäbTEMb • M äb T EM b IN T E X / S E M IT R O N IC S silicon rectifiers cont’d miniature axial lead silicon rectifiers T »» 1N3241 1N3242 1N3243 1N3244 1N3245 600 800 ■ 1000 1200 1500

T35W

Abstract: transistor kt 606A 65e9 transistor sr 6863 D 2SC965 CS9011 sr1k diode KT850 TRANSISTOR st25a transistor 130001 8d
Contextual Info: NEW PRODUCTS BULLETIN SINGLE-ENDED MOLDED BRIDGES Fig. 1 International Rectifier expands its quality line of highly reliable molded \ bridges with the new 10DB series of 1 amp full-wave silicon bridge rectifiers. The single-ended, in-line configuration is suitable for PC board applications,

1N5135

Abstract: SICTE-5 1N4564 SICT-45 SUES110G P6SE6.8 1N5959 1N2370B 1N4538
Contextual Info: PRODUCT LISTINGS d e v ic e p ag e d e v ic e 1N248B. 55 1N249B. 55 1N250B. 55 1N253 thru.50

2u20 diode

Abstract: 2U39 diode 1N4C07 IN6016 IN4688 1N4C03 1N4C02 HRG1000 1N1989B 1N218
Contextual Info: CODI Semiconductor, Inc m PRODUCT CATALOG Serving the Industry for over 25 years. SILICON DIODES • • • • • • • Zener and avalanche regulator diodes Temperature compensated zener reference diodes Forward regulator diodes Low leakage diodes Voltage variable capacitors

IN3492

Abstract: sg 4001 diode 1NA4 md914 35C10 1N20b 1n67a 0a202 diode iN3495 1469r
Contextual Info: NIAX VAX U E S 0 2 5 ° D IO D E Vw PRV If Vf IR T Y P E u S E 0A5 100 .3 5 1 .3 30 G GP 0 A6 60 .3 5 1 .3 9 .0 G GP 0A7 30 .2 5 1 .7 6 .0 G SW O A IO 30 1 .0 .9 5 600 G SW OA3I 85 12 0 .7 40 G GP 0A47 30 .1 5 .6 5 10 G 0A70 2 2 .5 . 15 .2 5 30 G RF OA71 90

IN3599

Abstract: 1N9168 1N4242 IN485 IN625 1N20S 1N4389 1N4243 in648 IN458a
Contextual Info: jomltron « • - _ SemitronicsCorp. ■ SS 481.1541= DD0DB05 3 ■ H iç rrp tp sem ico nd u c to r s IN T E X / SEMITRONICS CORP S7E D _ , , , / / / silicon diodes Reverse Current «A)150°C (See Notes) 5.0 SO 56 50 50 6.5 2.0 1.0 2.0 2.0 15 1.5