1MX32BIT Search Results
1MX32BIT Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
ce1hContextual Info: HANBit HMF1M32M4V Flash-ROM Module 4MByte 1Mx32Bit , 72Pin-SIMM, 3.3V Design Part No. HMF1M32M4V GENERAL DESCRIPTION The HMF1M32M4V is a high-speed flash read only memory (FROM) module containing 2,097,152 words organized in a x32bit configuration. The module consists of four 1M x 8bit FROM mounted on a 72 -pin, single -sided, FR4-printed circuit |
Original |
hmf1m32m4v1mx32bit72pin-simmx32bit+4 | |
|
Contextual Info: M53210124CE2/CJ2 DRAM MODULE M53210124CE2/CJ2 with Fast Page Mode 1M x 32 DRAM SIMM using 1Mx16, 1K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M53210124C is a 1Mx32bits Dynamic RAM high density memory module. The Samsung M53210124C consists of two CMOS 1Mx16bits DRAMs in 42-pin SOJ packages mounted on a 72-pin glass-epoxy substrate. A 0.1 or |
Original |
m53210124ce2/cj21mx16m53210124c1mx32bits+3 | |
|
Contextual Info: KMM332F104BT-L KMM332F124BT-L DRAM MODULE KMM332F104BT-L & KMM332F124BT-L Fast Page with EDO Mode 1M x 32 DRAM SO DIM M using 1M X 16, 1K & 4K Ref., 3.3V, Low pow er/Self-R efresh GENERAL DESCRIPTION FEATURES The Samsung KMM332F10 2 4BT is a 1Mx32bits Dynamic |
OCR Scan |
kmm332f104bt-lkmm332f124bt-lkmm332f101mx32bits+4 | |
|
Contextual Info: Preliminary M53210124DE2/DJ2 DRAM MODULE M53210124DE2/DJ2 with Fast Page Mode 1M x 32 DRAM SIMM using 1Mx16, 1K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M53210124D is a 1Mx32bits Dynamic RAM high density memory module. The Samsung M53210124D consists of two CMOS 1Mx16bits DRAMs in 42-pin SOJ packages mounted on a 72-pin glass-epoxy substrate. A 0.1 or |
Original |
m53210124de2/dj21mx16m53210124d1mx32bits+3 | |
IN3064
Abstract: power supply Smm 300
|
Original |
hmf1m32f2vc1mx32bit80pin-mmcx32bit+4 | |
power supply Smm 300Contextual Info: HANBit HMF1M32F2VB Flash-ROM Module 4MByte 1Mx32Bit , 80Pin-SMM, 3.3V Design Part No. HMF1M32F2VB GENERAL DESCRIPTION The HMF1M32F2VB is a high-speed flash read only memory (FROM) module containing 1,048,576 words organized in a x32bit configuration. The module consists of two 1M x 16 FROM mounted on a 80-pin stackable type, single -sided, FR4printed circuit board. |
Original |
hmf1m32f2vb1mx32bit80pin-smmx32bit+3 | |
|
Contextual Info: HYM41V33100BTWG 1Mx32, 1Mx32 based, PC133 D E S C R I PT I ON The H ynix H Y M 4 V 3 3 10O BT W G CMOS Syn chronous DRAMs Series in 4 0 0 m i l are 1Mx32bits 86pin TSOP-II 0.1uF decoupling capacitors per each SDRAM The Hyundai H Y M 4 V 3 3 1OOBTWG memory. The Hyundai |
OCR Scan |
hym41v33100btwg1mx32pc13386pin+1 | |
HMS1M32M8L
Abstract: HMS1M32Z8L 1mx32bit
|
Original |
hms1m32m8l1mx32bit72pinhms1m32z8l+2 | |
CE5 marking
Abstract: HMS1M32M8LA 72PIN-SIMM
|
Original |
hms1m32m8la1mx32bit72pinx32-bit+4 | |
|
Contextual Info: HANBit HMF1M32F8 Flash-ROM Module 4MByte 1Mx32Bit , 100Pin-MMC, 5.5V Design Part No. HMF1M32F8 GENERAL DESCRIPTION The HMF1M32F8 is a high-speed flash read only memory (FROM) module containing 1,048,576 words organized in a x32bit configuration. The module consists of eight 512K x 8 FROM mounted on a 100-pin stackable type, double -sided, FR4printed circuit board. |
Original |
hmf1m32f81mx32bit100pin-mmcx32bit+2 | |
a2719Contextual Info: HANBit HMF1M32F2VA Flash-ROM Module 4MByte 1Mx32Bit , 80Pin-SMM, 3.3V Design Part No. HMF1M32F2VA GENERAL DESCRIPTION The HMF1M32F2VA is a high-speed flash read only memory (FROM) module containing 1,048,576 words organized in a x32bit configuration. The module consists of two 1M x 16 FROM mounted on a 80-pin stackable type, double - sided, FR4printed circuit board. |
Original |
hmf1m32f2va1mx32bit80pin-smmx32bit+3 | |
|
Contextual Info: 1Mx32 bits PC133 SDRAM AIMM based on 1Mx32 SDRAM with LVTTL, 2 banks & 4K Refresh HYM4V33100BTWG Series DESCRIPTION The Hynix HYM4V33100BTWG Series are 1Mx32bits Synchronous DRAM Modules. The modules are composed of one 1Mx32bits CMOS Synchronous DRAMs in 400mil 86pin TSOP-II package, on a 132pin glass-epoxy printed circuit board. Two 0.22uF and one |
Original |
1mx32pc133hym4v33100btwg1mx32bits+3 | |
K4F151611DContextual Info: M53210124DE2/DJ2 DRAM MODULE M53210124DE2/DJ2 with Fast Page Mode 1M x 32 DRAM SIMM using 1Mx16, 1K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M53210124D is a 1Mx32bits Dynamic RAM high density memory module. The Samsung M53210124D consists of two CMOS 1Mx16bits DRAMs in 42-pin SOJ packages mounted on a 72-pin glass-epoxy substrate. A 0.1 or |
Original |
m53210124de2/dj21mx16m53210124d1mx32bits+4 | |
a2719Contextual Info: HANBit HMF1M32F2VSA Flash-ROM Module 4MByte 1Mx32Bit , 80Pin-SMM, 3.3V Design Part No. HMF1M32F2VSA GENERAL DESCRIPTION The HMF1M32F2VSA is a high-speed flash read only memory (FROM) module containing 2,097,152 words organized in a x32bit configuration. The module consists of Two 1M x 16 FROM mounted on a 80-pin stackable type, double - sided, FR4printed circuit board. |
Original |
hmf1m32f2vsa1mx32bit80pin-smmx32bit+3 | |
|
|
|||
IN3064
Abstract: 1M32B HMF1M32M8P A018
|
Original |
hmf1m32m8p32-bit72pin-simmx32bit+5 | |
KMM5321200C2W
Abstract: KMM5321200C2WG
|
Original |
kmm5321200c2w/c2wgkmm5321200cw/cwg1mx16kmm5321200c2w+3 | |
ADSP-21065L
Abstract: ADSP-21161 ADSP21161N ADSP-21161N EE-126 EE-163 MT48LC1M16A1
|
Original |
ee-163sda10adsp-21161nadsp-21065l+4 | |
ADM5120
Abstract: ADM5106 BSC COMPUTER SCIENCE digital logic design Notes DG33 1K v6 88 sgp 47-16 n2 biss 0001 description of transistor bc 148 PIN assignments of UTP cables 324-PIN
|
Original |
adm51205ns/87324-pin208-pin+8 | |
ADM5120
Abstract: ADMTEK NAND FLASH BGA usb ethernet RS232 single chip switch 324-PIN
|
Original |
adm5120document0211a/b/g12-port+6 | |
NAND FLASH BGA
Abstract: usb ethernet RS232 single chip switch adm5120 ADMTEK "Ethernet driver" usb ethernet single chip switch
|
Original |
adm5120rs23211a/b/g12-port+5 | |
|
Contextual Info: KMM5321204C2W/C2WG DRAM MODULE 1Mx32 DRAM SIMM 1MX16 Base Revision 0.0 November 1997 Rev. 0.0 (Nov. 1997) ELECTRONICS KMM5321204C2W/C2WG DRAM MODULE Revision History Version 0.0 (November 1997) • Changed module PCB from 6-Layer to 4-Layer. • Changed Module Part No. from KMM5321200CW/CWG to KMM5321200C2W/C2WG caused by PCB revision . |
OCR Scan |
kmm5321204c2w/c2wg1mx321mx16kmm5321200cw/cwg+3 | |
|
Contextual Info: DRAM MODULE KMM5321204C2W/C2WG 1Mx32 DRAM SIMM 1MX16 Base Revision 0.0 November 1997 Rev. 0.0 (Nov. 1997) DRAM MODULE KMM5321204C2W/C2WG Revision History Version 0.0 (November 1997) • Changed module PCB from 6-Layer to 4-Layer. • Changed Module Part No. from KMM5321200CW/CWG to KMM5321200C2W/C2WG caused by PCB revision . |
OCR Scan |
kmm5321204c2w/c2wg1mx321mx16kmm5321200cw/cwg+2 | |
sdram controller
Abstract: ADSP-21065L EE-126 EE-127 MT48LC1M16A1
|
Original |
ee-127adsp-21065lsdram controlleree-126+1 | |
1MX16
Abstract: KMM5321200C2W KMM5321200C2WG
|
Original |
kmm5321200c2w/c2wg1mx321mx16kmm5321200cw/cwg+2 | |