CE1H Search Results

Contextual Info: CY62167EV18 MoBL PRELIMINARY 16-Mb 1M x 16 Static RAM Features input and output pins (IO0 through IO15) are placed in a high impedance state when: • Very high speed: 55 ns • Deselected (CE1HIGH or CE2 LOW) • Wide voltage range: 1.65V – 2.25V • Outputs are disabled (OE HIGH)

Contextual Info: PRELIMINARY CY62157CV18 MoBL2 512K x 16 Static RAM ed CE1 HIGH or CE2 LOW . The input/output pins (I/O0 through I/O15) are placed in a high-impedance state when: deselected (CE1HIGH or CE2 LOW), outputs are disabled (OE HIGH), BHE and BLE are disabled (BHE, BLE HIGH), or during a write operation (CE1 LOW, CE2 HIGH and WE LOW).

Contextual Info: CY62157CV18 MoBL2 512K x 16 Static RAM Features deselected CE1HIGH or CE2 LOW , outputs are disabled (OE HIGH), BHE and BLE are disabled (BHE, BLE HIGH), or during a write operation (CE1 LOW, CE2 HIGH and WE LOW). • Low voltage range: — CY62157CV18: 1.65V–1.95V

DG201ACJ

Abstract: DG201A DG201AAK DG201ABK DG201ACY DG202 DG202AK DG202CJ DG441 GDIP1-T16
Contextual Info: DG201A, DG202 T UC T R OD R OD U C P E P , T E E P DI OL UT OBS UBSTIT DG441 P42 S 4 , ) E , DG Sheet R DIP C)Data SIBL POS 0201(CE1HS(SOI HI1- I9P020 H itle G20 , 202 bt uad ST, OS a- May 2001 File Number 3117.3 Quad SPST, CMOS Analog Switches Features

CY62167DV30LL-55BVI

Contextual Info: CY62167DV30 MoBL 16-Mbit 1M x 16 Static RAM Features toggling. The device can also be put into standby mode when deselected (CE1 HIGH or CE2 LOW or both BHE and BLE are HIGH). The input/output pins (I/O0 through I/O15) are placed in a high-impedance state when: deselected (CE1HIGH or CE2

8051 code assembler for data encryption standard

Abstract: t3th HM628128 8051 coding for data encryption standard DS5000 DS5001FP DS5002FP DS5002FP-12 DS5002FP-16 DS5002FPM-12
Contextual Info: DS5002FP ti4 E D 2hmi3D DALLAS □D D7 S1 S SEMICONDUCTOR DALLAS SEMICONDUCTOR PIN ASSIGNMENT • 8051 compatible uC for secure/sensitive applications 8 8 B ^ Ù5.,_ S ° Access 32, 64, or 128K bytes of nonvolatile SRAM for program and/or data storage - In-system programming via on-chip serial port

ba1s

Abstract: QS500 BD7 274 FP 801 CRC-16 DS5001FP DS5002FP dallas nvram cmos
Contextual Info: Bi b4E » DALLAS 2bl4130 0 0 0 7 ^ 2 SEMI CONDUCT OR S3b « D A L DS5001FP CORP DALLAS SEMICONDUCTOR DS5001FP 128K Soft Micro Chip FEATURES PIN ASSIGNM ENT • 8051 compatible uC adapts to its task - Accesses up to 128K bytes of nonvolatile S RAM In-system programming via on-chip serial port

BLM21B102SPT

Abstract: rd22 zener diode 56kbps modem optocoupler HA11 lu27xx rd23 8-SOP-150 RMC-EA16LMY-OM00-A 80C200 80C300
Contextual Info: APPLICATION NOTE 8.2 SMSC LAN91C100 and LAN91C110 FEAST Competitive Comparison in Embedded and PC Card Applications By Paul Brant OVERVIEW. 1

CY62187EV30

Contextual Info: CY62187EV30 MoBL 64-Mbit 4 M x 16 Static RAM 64-Mbit (4 M × 16) Static RAM Features Functional Description • Very high speed ❐ 55 ns ■ Wide voltage range ❐ 2.2 V to 3.7 V ■ Ultra low standby power ❐ Typical standby current: 8 A ❐ Maximum standby current: 48 μA

BLM21B102SPT

Abstract: rd22 zener diode optocoupler HA11 RA13 honda c92 6R19 ZENER A16 80C200 80C300 LAN91C100
Contextual Info: APPLICATION NOTE 8.2 SMSC LAN91C100 and LAN91C110 FEAST Competitive Comparison in Embedded and PC Card Applications By Paul Brant OVERVIEW. 1

CY62157EV30LL-45BVXI

Abstract: TSOP 48 thermal resistance
Contextual Info: CY62157EV30 MoBL 8-Mbit 512 K x 16 Static RAM 8-Mbit (512 K × 16) Static RAM Features Functional Description • Thin small outline package (TSOP) I package configurable as 512 K × 16 or 1 M × 8 static RAM (SRAM) ■ High speed: 45 ns ■ Temperature ranges

CY62177EV30

Abstract: CY62177EV30LL-55ZXI
Contextual Info: CY62177EV30 MoBL 32-Mbit 2 M x 16 / 4 M × 8 Static RAM 32-Mbit (2 M × 16 / 4 M × 8) Static RAM Features Functional Description • Thin small outline package (TSOP) I configurable as 2 M × 16 or as 4 M x 8 static RAM (SRAM) ■ Very high speed ❐ 55 ns

55BV

Abstract: AN1064 CY62167EV18 CY62167EV18LL CY62167EV18LL-55BAXI CY62167EV18LL-55BVXI CY62167EV30LL
Contextual Info: CY62167EV18 MoBL 16-Mbit 1M x 16 Static RAM Features by 99% when addresses are not toggling. Place the device into standby mode when deselected (CE1 HIGH or CE2 LOW or both BHE and BLE are HIGH). The input and output pins (IO0 through IO15) are placed in a high impedance state when: the device is

CY62157CV25

Abstract: CY62157CV30 CY62157CV33 CY62157DV30 CY62157DV30L CY62157DV30LL
Contextual Info: CY62157DV30 MoBL 8-Mbit 512K x 16 MoBL® Static RAM Functional Description[1] Features • Temperature Ranges The CY62157DV30 is a high-performance CMOS static RAM organized as 512K words by 16 bits. This device features advanced circuit design to provide ultra-low active current.

Contextual Info: CY62187EV30 MoBL 64-Mbit 4 M x 16 Static RAM 64-Mbit (4 M × 16) Static RAM ideal for providing More Battery Life (MoBL®) in portable applications such as cellular telephones. The device also has an automatic power down feature that significantly reduces power

MSM44256

Abstract: M5M442 M5M44256 MH51208PNA-10 MH51208PNA-12
Contextual Info: u i M IT S U B IS H I LSIs M HS1208P N A-10,-12 4 1 9 4 3 Q 4 -B IT 5 2 4 2 8 8 -W O R P B Y 8-B IT P S E U P O -P S E U D O STATIC RAM MODULE DESCRIPTIO N The M H 51208PN A is 5 2 4 2 8 8 word x 8-bit PSEUDO- PIN C O N F IG U R A T IO N (TOP V IE W ) PSEU D O static R A M and consist o f four industry standard

Contextual Info: CY62167EV18 MoBL 16 Mbit 1M x 16 Static RAM Features by 99 percent when addresses are not toggling. Place the device into standby mode when deselected (CE1 HIGH or CE2 LOW or both BHE and BLE are HIGH). The input and output pins (I/O0 through I/O15) are placed in a high impedance state when: the

Contextual Info: CY62157EV30 MoBL 8-Mbit 512K x 16 Static RAM Features • TSOP I package configurable as 512K x 16 or as 1M x 8 SRAM • High speed: 45 ns reduces power consumption when addresses are not toggling. Place the device into standby mode when deselected (CE1

104 k5k capacitor

Abstract: motorola HEP 801 motorola HEP cross reference sony KHS - 313 Micropower Buffered Variable Voltage DS2251-64-12 motorola HEP 320 cross reference 80c154 intel k5k 104 capacitor 104 capacitor k5k
Contextual Info: TABLE OF CONTENTS SOFT MICROCONTROLLER USER’S GUIDE Section 1 Introduction . 1 Section 2 Selection G u id e . 4

CY62157CV18

Abstract: CY62157DV20
Contextual Info: PRELIMINARY CY62157DV20 MoBL2 512K x 16 Static RAM Features reduces power consumption by 99% when addresses are not toggling. The device can also be put into standby mode when deselected CE1 HIGH or CE2 LOW or both BHE and BLE are HIGH . The input/output pins (I/O0 through I/O15) are placed

CY62177DV20

Abstract: AN1064 CY62177DV20LL-70BAI
Contextual Info: CY62177DV20 MoBL2 32-Mbit 2M x 16 Static RAM Features by 99% when addresses are not toggling. The device can also be put into standby mode when deselected (CE1 HIGH or CE2 LOW or both BHE and BLE are HIGH). The input and output pins (IO0 through IO15) are placed in a high impedance state when:

CY62157CV25

Abstract: CY62157CV30 CY62157CV33 CY62157DV30 cy62157dv30l-55zxi
Contextual Info: CY62157DV30 MoBL 8-Mbit 512K x 16 MoBL Static RAM Features portable applications such as cellular telephones.The device also has an automatic power-down feature that significantly reduces power consumption. The device can also be put into standby mode when deselected (CE1 HIGH or CE2 LOW or

Contextual Info: CY62177ESL MoBL 32-Mbit 2 M x 16/4 M × 8 Static RAM 32-Mbit (2 M × 16/4 M × 8) Static RAM Features Functional Description • Thin small outline package-I (TSOP-I) configurable as 2 M × 16 or as 4 M × 8 static RAM (SRAM) ■ High-speed up to 55 ns

Contextual Info: CY62177EV30 MoBL 32-Mbit 2 M x 16 / 4 M × 8 Static RAM 32-Mbit (2 M × 16 / 4 M × 8) Static RAM Features Functional Description • Thin small outline package (TSOP) I configurable as 2 M × 16 or as 4 M × 8 static RAM (SRAM) ■ Very high speed ❐ 55 ns