6R19 Search Results

BLM21B102SPT

Abstract: rd22 zener diode 56kbps modem optocoupler HA11 lu27xx rd23 8-SOP-150 RMC-EA16LMY-OM00-A 80C200 80C300
Contextual Info: APPLICATION NOTE 8.2 SMSC LAN91C100 and LAN91C110 FEAST Competitive Comparison in Embedded and PC Card Applications By Paul Brant OVERVIEW. 1

BLM21B102SPT

Abstract: rd22 zener diode optocoupler HA11 RA13 honda c92 6R19 ZENER A16 80C200 80C300 LAN91C100
Contextual Info: APPLICATION NOTE 8.2 SMSC LAN91C100 and LAN91C110 FEAST Competitive Comparison in Embedded and PC Card Applications By Paul Brant OVERVIEW. 1

6r199p

Abstract: mosfet 6R199 6R199P DATA SHEET IPP60R199CP JESD22 SP000084278 6R199
Contextual Info: IPP60R199CP CoolMOS Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.199 Ω R DS on ,max • Ultra low gate charge V Q g,typ 32 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications

RW-69

Abstract: RW69V rw70u
Contextual Info: 80 Series Acrasil ‚‚ Silicone-Ceramic Conformal Axial Lead Wirewound Resistors MIL-R-26 Specifications 1% Tolerance 5% available 1.5 / 38.1 Series L Wattage 81F (RW70U) 82 83F (RW79U) 83J (RW69V) 85F (RW74U) 85J (RW67V) 80F (RW78U) 80J (RW68V) Ohms

1m40

Abstract: 5R62 6R19 0R22 5r11 8R66 mini-melf beyschlag 3R32 4M42 1m15
Contextual Info: NOVA Elektronik GmbH: Comp-Cards -System 1/3 Chip Metalfilm Resistors Mini-Melf SBR-02 10 Stck CP-18 177 Values (45 Pieces each) / 7.965 Pieces Chip Resistors Mini-Melf Type/Brand: Wattage: Tolerance: TC: MMA 0204 / Vishay Beyschlag 0,25W ±5% / ±1% 50ppm/°C

6R199P

Abstract: 6R199 IPW60R199CP PG-TO-247-3 IPW60R199 JESD22 SP000089802
Contextual Info: IPW60R199CP CoolMOS Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.199 Ω R DS on ,max • Ultra low gate charge V Q g,typ 33 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications

6R199

Contextual Info: IPP60R199CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.199 Ω R DS on ,max • Ultra low gate charge V Q g,typ 33 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications

ISS 99 diode

Abstract: 6R199P IPW60R199 6R19 IPW60R199CP
Contextual Info: IPW60R199CP CoolMOSTM Power Transistor Product Summary Features V DS • Lowest figure-of-merit R ONxQg 600 0.199 Ω R DS on ,max • Ultra low gate charge V Q g,typ 33 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications

6R199P

Abstract: IPA60R199CP 6R199P mosfet
Contextual Info: IPA60R199CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.199 Ω R DS on ,max • Ultra low gate charge V Q g,typ 33 nC • Extreme dv/dt rated • High peak current capability PG-TO220FP • Qualified according to JEDEC1) for target applications

Contextual Info: 80 Series FEATURES RW Series SPECIFICATIONS Commercial Grade Acrasil ‚ Silicone-Ceramic Conformal Axial Terminal Wirewound 1% Tol. 5% avail. Material Coating: Silicone-ceramic. Core: Ceramic. Terminals: Solder-coated copper clad axial. Derating: Linearly from

6R190C6

Abstract: 6r190 6r190c to247 pcb footprint transistor SMD MARKING CODE 14
Contextual Info: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R190C6 Data Sheet Rev. 2.1, 2010-02-09 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ C6 Power Transistor 1 IPA60R190C6, IPB60R190C6

Contextual Info: FEATURES •฀ Designed฀for฀precision฀power฀ applications •฀ All-welded฀construction •฀ RW฀Series฀“Mil”฀value฀resistors฀ marked฀with฀“Mil”฀in฀accordance฀ with฀MIL-R-26฀specifications฀ SPECIFICATIONS Material

Contextual Info: IPI60R199CP CoolMOS Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.199 Ω R DS on ,max • Ultra low gate charge V Q g,typ 32 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications

mosfet 6R199

Abstract: 6R199 IPB60R199CPA IPB60R099CPA IPI60R099CPA IPP60R099CPA PG-TO-263-3-2 PG-TO263 6R199A
Contextual Info: IPB60R199CPA CoolMOS Power Transistor Product Summary 600 V DS V 0.199 Ω R DS on ,max 33 Q g,typ nC Features • Lowest figure-of-merit Ron x Qg • Ultra low gate charge • Extreme dv/dt rated PG-TO263-3 • High peak current capability • Automotive AEC Q101 qualified

6R190C6

Abstract: marking code ll SMD Transistor SMD TRANSISTOR MARKING 9D 6r190 d 998 transistor circuit smd transistor marking LL IPA60R190C6 IPB60R190C6 IPI60R190C6 IPP60R190C6
Contextual Info: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R190C6 Data Sheet Rev. 2.1, 2010-02-09 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ C6 Power Transistor 1 IPA60R190C6, IPB60R190C6

resistor

Abstract: 1m15
Contextual Info: Thick Film Chip Resistor 1206 Features • Small size and light weight • Suitable for both wave and reflow soldering • Reduction of assembly costs Performance Specification Temperature Coefficient : 1Ω to 10Ω ±400PPM/°C 11Ω to 100Ω ±200PPM/°C

Contextual Info: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R190C6 Data Sheet Rev. 2.1, 2010-02-09 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ C6 Power Transistor 1 IPA60R190C6, IPB60R190C6

6R190C6

Contextual Info: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R190C6 Data Sheet Rev. 2.1, 2010-02-09 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ C6 Power Transistor 1 IPA60R190C6, IPB60R190C6

6R190C6

Contextual Info: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R190C6 Data Sheet Rev. 2.1, 2010-02-09 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ C6 Power Transistor 1 IPA60R190C6, IPB60R190C6

panasonic inverter dv 707 manual

Abstract: 018T A423 Mosfet FTR 03-E Arcotronics 1.27.6 nsl 7053 mkp DX 3500 manual Honeywell DBM 01A Polyester capacitors 823k 250V SPRAGUE powerlytic 36Dx sprague 68D
Contextual Info: PASSIVE COMPONENTS Resistors Networks and Arrays Bourns. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 590, 591, 592 Caddock . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 593 CTS. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 594

6R199P

Abstract: to-263-3 smd transistor marking DF
Contextual Info: IPB60R199CP CoolMOS Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.199 Ω R DS on ,max • Ultra low gate charge V Q g,typ 32 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications

RW69V

Abstract: 3R32
Contextual Info: Choose Ohmite’s highest quality conformal axial lead silicone-ceramic coated resistors for applications requiring high precision and stability. The wirewound 80 Series 1% tolerance resistors have a low temperature coefficient and maintain a high degree of stability under demanding

zener DIODE A112

Abstract: Pulse bob smith termination LOG RX-2 1118 how to connect slotted optocoupler Transcend circuit diagram bob smith termination wiring diagram of autotransformer for three phase Transcend Electrolytic IPC-D-317 match for A124 transistor
Contextual Info: APPLICATION NOTE 8.7 Rev 1.0 General Guidelines for Reduced Electromagnetic Interference utilizing the SMSC LAN83C175 EPIC 10/100 Mbps Ethernet Controller and Physical Layer Devices By Thomas Greene and Paul Brant 1. TABLE OF FIGURES .4

Contextual Info: IPW60R199CP CoolMOS Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.199 Ω R DS on ,max • Ultra low gate charge V Q g,typ 33 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications