1MBH60 Search Results

MBH60D-090A

Abstract: 1MBH60D 1MBH60D-090A 30S3 H150 aft7
Contextual Info: 1MBH60D-090A g ilG B T IGBT : Outline Drawings INSULATED GATE BIPOLAR TRANSISTO R ^ Features • i H i g h Speed Switching • fëtâifllïJiE Low Saturation Voltage • hÎ SÎ ÆÎ MOSV— Hi gh Impedance Gate »/j\ggy{.y^ - _ S m a l l Package : Applications

IGBT 1MBH60-100

Abstract: J9100
Contextual Info: 1MBH60-100 ^ ± IG B T IGBT INSULATED GATE BIPOLAR TRANSISTOR • : Outline Drawings bkü : Features •H i â X ' • i& ü ü in liS • Hi gh Speed Switching Low Saturation Voltage Hfti/tCMOS-ir— MUie • :y High Impedance Gate Small Package 0. 6 * ■ ffliÊ : Applications

1mbh60d-090a

Contextual Info: 1MBH60D-090A IGBT I : Outline Drawings in s u l a t e d g a t e b ip o l a r t r a n s is t o r Features • High Speed Switching • flfcliiSWE Low Saturation Voltage • M itt M O s y —HUifc High Impedance Gate • ' j ' S S ' S m a l l Package • £ )& : Applications

igbt 200v 20a

Abstract: tc122 25 1MBH65D-090A igbt 200V 5A TC122 1MBH60D-090A TC122-25 1mbh ERW03-060 ERW04-060
Contextual Info: パワーデバイス / Power Devices IGBT • IGBTモールドタイプ Molded Package Type IGBTs 電子レンジ用モールドタイプ Molded package types, such as microwave ovens 形 式 Device type 1MBH60D-090A 1MBH65D-090A VCES VGES Volts 900 900

1MBH60D-090A

Abstract: 1MBH60D transistor z5t 150-TC1
Contextual Info: 1MBH60D-090A IGBT I : Outline Drawings in s u l a t e d g a t e b ip o l a r t r a n s is t o r Features • High Speed Switching • flfcliiSWE Low Saturation Voltage • M itt M O s y —HUifc High Impedance Gate • ' j ' S S ' S m a l l Package • £ )& : Applications

1mbh60-100

Contextual Info: 1MBH60-100 Transistors Independent IGBT Power Module Isolated Case Y/N Yes Circuits Per Package1 V(BR)CES (V)1k V(BR)GES (V)20 I(C) Max. (A)60 Absolute Max. Power Diss. (W)260 Minimum Operating Temp (øC) Maximum Operating Temp (øC) Thermal Resistance Junc-Case

1MBH60D-090A

Abstract: IGBT 900v 60a 1mbh60d090a 30S3 T151 T460 T930 MBH60D-090A
Contextual Info: 1MBH60D-090A I 'i l G B T IG B T INSULATED GATE BIPOLAR TRANSISTOR : Features •i H i g • h Speed Switching Low Saturation Voltage • ¡ iïA^' Îr—hÎSÎÆ MOS>r— •/ j S m a l l High Impedance Gate Package : Applications • ll/iE & S IS ilti

1MBH60-090

Abstract: P460 T151 T760 T810 T930 induction heater 090 H60-090 z-W99
Contextual Info: 1M BH60-090 ± IG B T IGBT INSULATED GATE BIPOLAR TRANSISTOR : Outline Drawings 5*0.3 • Features • i • • H i g h Speed Switching Low Saturation Voltage M O S^—MUia High Impedance Gate a Gate Ac+o? ©Collector «Emitter Small Package ¿î03 : Applications

6DI15S-050

Abstract: 1MB1400N-120 6D130Z-120 ENC471 2sk2850 2sk2761 ESJA58-06A 1MBH-60D 1mbh60d-090a 6DI15S050
Contextual Info: fl^ Ä f^ l/T y p e Number Index Page Page Page Page Page Page 1D500A-030 1DI200E-055 1DI200K-055 1DI200M-120 1DI200MA-050 1DI200Z-100 12 17 17 14 13 15 1MBH15D-120 1MBH20D-060 1MBH25-120 1MBH25D-120 1MBH30D-060 1MBH50-060 19 19 19 19 19 19 2DI75Z-120 2DI75Z-140

IGBT 1MBH60-100

Abstract: 1MBH60-100 t930 T151 T460
Contextual Info: 1 M B H 6 - 1 ^zblGBT IGBT INSULATED GATE BIPOLAR TRANSISTOR • W K '+ i i : Outline Drawings : Features • High Speed Switching Low Saturation Voltage • M A lJ 'f —H£i/t MOS'ir“ M?|is High Impedance Gate Small Package : Applications • flIG i& iS M tliS

IGBT 1MBH60-100

Abstract: 1MBH60-100 TRANSISTOR 1mbh60-100 IGBT 900v 60a s4502 IC60 1mbh60
Contextual Info: 1 M B H 6 - 1 ^zblGBT IGBT INSULATED GATE BIPOLAR TRANSISTOR • W K '+ i i : Outline Drawings : Features • High Speed Switching Low Saturation Voltage • M A lJ 'f —H£i/t MOS'ir“ M?|is High Impedance Gate Small Package : Applications • flIG i& iS M tliS

1MBC15-060

Abstract: 1mb12-140 TO-3PL 1MBH50D-060 collmer igbt
Contextual Info: DISCRETE IGBT 600 VOLT, DISCRETE IGBT • 5 - 5 0 Amps Device Type V ces Pc lc Tc=25°C Tc=80°C Tc=100°C Volts Amps Amps Amps 1MBC05-060 1MBC10-060 1MBC15-060 1MB20-060 600 600 600 600 13 15 5 10 1MB30-060 1MBH50-060 600 600 20 24 38 48 82 20 30 Vge = 15V

Contextual Info: 1 M B 6 H D - 9 ^ ± IG B T A IG B T IN SU LA T ED GATE BIPO LA R TR A N SIST O R •iNNt: : Features •S i H i g • i£ S S in E h Speed Switching Low Saturation Voltage • lA A - y - h ft £ t t M O S V — High Impedance Gate Small Package : Applications

2mb175

Abstract: 1MBH60-090 2MB175L-060 HIGH VOLTAGE DIODE for microwave ovens 1mbh 1MBH65-090 ERD60-100 T0220AB T03PL imbi300
Contextual Info: \W]IGBT mold types • • • • High speed sw itching • Low saturation vo ltag e V o lta g e drive m e th o d perm its lo w p o w er drive Su ited fo r high fre q u e n c y p o w e r supplies, such as m icro w a ve ovens W h e n using these IGBTs, FUJI'S fast recovery d io d e ER D 60-100 is required.

imbi300

Contextual Info: [ÜT| IGBT mold types • • • • High speed sw itch in g • Low saturation vo ltag e V o lta g e drive m e th o d perm its lo w p o w e r drive Su ited fo r high fre q u en cy p o w e r supplies, such as m icro w a ve ovens W h e n using these IGBTs, FUJI'S fast recovery d io d e ER D 60-100 is required.

tc122 25

Abstract: 1MBH75D-060S 1MBH65D-090A TC1278 1MBH50D060 TO-3PL 1MB15D-060 1MBH60D 1MBC05-060 1MBC10-060
Contextual Info: パワーデバイス / Power Devices IGBT • IGBTモールドタイプ Molded Package Type IGBTs 600Vクラス 産業用モールドタイプ 600 volts class molded package types 形 式 Device type IGBT VCES VGES 1MBG05D-060 1MBC05-060 1MBC05D-060

IGBT 1MBH60-100

Abstract: 1mbh 1MBH60100 1MBH60-100 bhoo imbh60 FUJI IGBT
Contextual Info: Ratings and ch aracteristics of Fuji IGBT 1 M B H 6 1. Absolute maximum ratings 0 — 1 O O Tc=25*C I terns Symbols Ratings Units Col lector-Em itter Voltage Vces 1000 V Gate-Emitter Voltage Vces ±20 V 60 A 180 A 260 W + 150 *C Continuos Ic C ollector Current

1mbh

Contextual Info: D IG B T m old types 1High speed sw itching • Lo w saturation voltage Voltage drive m ethod perm its low pow er drive Su ited for high freq uency po w er supplies, such as m icro w a ve ovens 1W h e n using these IG BT s, F U JI'S fast recovery diode ERD60-100 is required.

1mbh

Abstract: igbt 200v 30a
Contextual Info: /\°7 —x / W 7s • 1G B T^-«M /K £ < 7 S i U > v ffl i / Power Devices M olded Package Type IGBTs ; 1/K -f 7° / * ¥ H IS]11^ ffl i ^ K ^ < 7° Molded package types, such as microwave ovens / Horizontal deflection circuit V géS fc PC rt,>r-y Volts Volte

1MBH65-090

Abstract: 1mbh60-090 2MBI50N-120 6MBI50FA-060 6MBI50L-120 2MBI75F-060 6MBI10L-060 1mbh 2mbi200f 2mbi25f
Contextual Info: IGBT MODULES Ratings and Specifications Alphanumerical index Type Page G roi No. ER ERD60-100 ERD65-090 40 40 Page G rou p No. 1 1 2M 2MBI25F-120 2MBI25L-120 43 41 8 4 2MBI50F-060 2MBI50F-120 2MBI50L-060 2MBI50L-120 2MBI50N-060 2MBI50N-120 42 43 40 41 44 44

1mb12-140

Abstract: 1MBI30L-060 2MBI100L-060 1mb12 IGBT 1MBH60-100 1MBI30L060 m-219 2MBI100F-060 1mbh collmer igbt
Contextual Info: IGBT DISCRETE T0-3PL, T0-3PF & BBT PACKAGE Device V ces V ce sat V qe=15V Pkg. Switching time (Max.) lc PC cont. Par IGBT Max. lc ton V ges type toff tf Volts Volts Amps. Watts Volts Amps. H sec. 1MB12-140 1400 ±20 12 100 6.0 12 - 1.2 1.0 T03P F - sec.