1GHZ Search Results

Contextual Info: TO SHIBA 2SC4394 Transistor Silicon NPN Epitaxial Planar Type VHF ~ UHF Band Low Noise Amplifier Applications F e a tu re s • L o w N oise Figure, H igh Gain • N F = 1.1 d B , IS21el2 = 11 dB f= 1GHz A b s o lu te M a x im u m R a tin g s (Ta = 2 5 C )

Contextual Info: Advance Product Information June 29, 2004 20 - 40 GHz IQ Mixer TGC1430H-EPU Key Features and Performance • • • • • 0.25um pHEMT Technology 20 - 40 GHz RF/LO Frequencies DC - 1GHz IF -11 +/- 1dB Conversion Gain 15 dBm Input Drive Primary Applications

MT3S113

Abstract: transistor 2F to-236 4360A
Contextual Info: MT3S113 TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S113 VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mm FEATURES • Low Noise Figure:NF=1.15dB Typ. (@ f=1GHz) • High Gain:|S21e|2=11.8dB(Typ.) (@ f=1GHz) Marking

USB3740

Contextual Info: USB3740 High Speed Switch for Mobile and Portable Applications PRODUCT FEATURES „ Datasheet High Speed USB Mux for multiplexing the USB lanes between different functions — Switch the USB connector between two different functions — Up to 1GHz Bandwidth

LNA Mixer VCO 2.4 GHz

Abstract: 800-1200MHZ SA620 SA620DK SA7025 philips radio 900MHz
Contextual Info: INTEGRATED CIRCUITS SA620 Low voltage LNA, mixer and VCO – 1GHz Product data Supersedes data of 1993 Dec 15 Philips Semiconductors 2004 Dec 14 Philips Semiconductors Product data 1GHz low voltage LNA, mixer and VCO DESCRIPTION SA620 PIN CONFIGURATION The SA620 is a combined RF amplifier, VCO with tracking bandpass

SY89228U

Abstract: SY89229U SY89230U
Contextual Info: SY89229U 1GHz Precision, LVDS ÷3, ÷5 Clock Divider with Fail Safe Input and Internal Termination General Description The SY89229U is a precision, low jitter 1GHz ÷3, ÷5 clock divider with an LVDS output. A unique FailSafe Input FSI protection prevents metastable

J216

Abstract: UPF1030 J2-13
Contextual Info: URFDB Sec 05_1030 11/3/99 10:39 AM Page 5-1 UPF1030 30W, 1GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS Description This device is designed for base station applications up to frequencies of 1GHz. Rated with a minimum output power of 30W, it is ideal for CDMA, TDMA, GSM, FM,

MCL 25

Abstract: NN12 P35-4211-0 P35-4211-1
Contextual Info: P35-4211-1 GaAs MMIC SPDT REFLECTIVE SWITCH, DC - 3GHz Features • Broadband performance • Low insertion loss; • • Ultra low DC power consumption Fast switching speed; 3ns typical • Low cost SO8 plastic package 0.6dB typ at 1GHz Description The P35-4211-1 is a high performance Gallium Arsenide monolithic single pole double throw RF switch,

GaAs MMIC SPDT TERMINATED SWITCH DC 6GHz

Abstract: NN12 P35-4227-3T
Contextual Info: P35-4227-3T GaAs MMIC SPDT TERMINATED SWITCH, DC - 3GHz Features • Broadband performance • High Isolation; 45dB typ at 1GHz • • Ultra low DC power consumption Fast switching speed; 3ns typical • SO8 surface mount plastic package Description The P35-4227-3T is a high performance Gallium Arsenide single pole double throw broadband RF

marking jls

Abstract: marking code g1s
Contextual Info: SIEMENS BF 1009S Silicon N-Channel MOSFET Tetrode • For low-noise, gain-controlled input stages up to 1GHz • Operating voltage 9V • Integrated bias network Droin HF Output + DC E H A 0 7 2 Î5 ESD: Electrostatic discharge sensitive device, observe handling precaution!

noise source diode

Contextual Info: COMMON SOURCE BIAS SCHEME FEATURES • Ion-im planted fo r greater control and reliability • Wide dynamic range • Positive bias only • High gain through UHF range - 10dB at 1GHz • Low noise through UHF range: SD200 - 4.5dB SD201 - S.OdB • Low input capacitance - 2.4pF

NN12

Abstract: P35-4227-3R
Contextual Info: P35-4227-3R GaAs MMIC SPDT REFLECTIVE SWITCH, DC - 3GHz Features • Broadband performance • High Isolation; 40dB typ at 1GHz • • Ultra low DC power consumption Fast switching speed; 3ns typical • SO8 surface mount plastic package Description The P35-4227-3R is a high performance Gallium Arsenide single pole double throw broadband RF

832u

Abstract: erie
Contextual Info: SILVER PLATED BUSHING .187 HEX. [4.75] CONICAL BOTH ENDS CA P A C IT A N C E 50pF - 175pF TEMP, RANGE -2 5 * C TD + 85‘ C CURRENT 15 AMP MAX, WDRKING VOLTAGE 85°C 100 V D C DC R E S IS T A N C E I- 0.062 [1.585] ,01 Dhms MAX, I.L.= NO LOAD 150MHz 3dB 1GHz

Contextual Info: *SYNERGY FR E QU E NC Y S YNTHESI ZER 60MHz to 1 GHz ClockW orks SY89424V S E M IC O N D U C T O R FEATURES • 3.3V and 5V power supply options ■ Up to 1GHz clock frequencies ■ Internal quartz reference oscillator driven by quartz crystal or PECL source

IRf 724 N

Abstract: irf128 irf 729 SA7015 SA7015DK SA7025 php program SR01058 accumulator 1GHz
Contextual Info: Philips Semiconductors Objective specification 1GHz low-voltage single Fractional-N synthesizer DESCRIPTION SA7015 PIN CONFIGURATION The SA7015 is a monolithic low power, high performance frequency synthesizer fabricated in QUBiC BiCMOS technology. It is compatible with the main synthesizer of the SA7025. Featuring

Contextual Info: PJSRV05W-4W6 LOW CAPACITANCE TVS DIODE ARRAY The PJSRV05W-4W 6 has a low typical capacitance of 1pF and operates with virtually no insertion loss to 1GHz.This makes the device ideal for protection of high-speed data lines such as USB2.0,Firewire,DVI,and Gigabit Ethernet interfaces.

Contextual Info: RF1604 BROADBAND HIGH POWER SP4T SWITCH Package Style: QFN, 12-pin, 2.5mmx2.5mm RF1604 Features        2kV HBM ESD Protection on All Ports Low Frequency to >2.7GHz Operation Low Insertion Loss: 0.4dB at 1GHz Very High Isolation: 40dB at

D10040300GTH

Contextual Info: D10040300GTH D10040300G TH 40MHz to 1Ghz gaAs Power Doubler Hybrid, High Output Capability 40MHz to 1GHz GaAs POWER DOUBLER HYBRID Product Description Features The D10040300GTH is a Hybrid Power Doubler amplifier module with high output capability. The D10040300GTH employs GaAs dice and is

2SC4864

Abstract: sanyo lc 15011 ZS22 ic 3586
Contextual Info: Ordering number : EN 4 5 8 3 SAÊYO i No.4583 _ 2SC4864 NPN Epitaxial Planar Silicon Transistor VHF to UHF Wide-Band Low-Noise Amp Applications Features • Low noise : NF = l.ldB typ f=lGHz •High gain: I S21e I 2= lldB typ (f= 1GHz)

CQ 817

Abstract: cq 0765 TRANSISTOR cq 817 ic 4580 2SC4860
Contextual Info: Ordering number: E N 4 5 8 0 2SC4860 No.4580 NPN E pitaxial P lan ar Silicon Transistor SA\YO UHF Converter, Local Oscillator Applications i F e a tu r e s • H igh cutoff frequency :fT = 6.5GHztyp. * H igh gain : I S21e l2= 11.5dB typ f= 1GHz . •Sm all Cob : N F = 0.65pF typ.

HPL0603

Abstract: HPL1005 TFL0510
Contextual Info: TFL series, high-precision, thin-film chip inductors. An excellent inductance tolerance of Ϯ0.1nH and thickness of 0.4Ϯ0.1mm. Self-resonance frequencies of more than 1GHz and temperature coefficient of inductance from 0 to ϩ200ppm/ЊC are available. Our SMD components contribute to lead-free composition of electronics products.

actp-1514

Abstract: ACTP-1501 ACTP-1555 ACTP-1572 ACTP-1662
Contextual Info: Advanced Confrol Components COAXIAL TUNNEL DIODE DETECTORS Superior performance and high reliability are designed into these detectors. They offer extremely stable output voltage over wide temperature excursions, typically +/-0.15dB from -65°C to +100°C at 1GHz and approx. +/-0.3dB at

st P 1806

Contextual Info: SURFACE MOUNT EMI FILTERS VFM41R Series The VFM41R Series is an 1806 size, three terminal varistor-capacitor designed to remove ESD surges as well as provide EMI filtering. This filter provides excellent insertion loss characteristics exceeding 1GHz. FEATURES

high power 1550 dfb laser diode

Abstract: dfb laser diode 1310nm -1550nm 1550nm analog receiver
Contextual Info: P/N: ODP-35-DP-HDX-SSCA-XX 1310nm Emitting DFB , 1550nm Receiving (Analog) , Bi-directional Diplexer Optical Module Features 1310nm DFB Laser Design, 1550nm Analog Receiver High Isolation 1GHz video Receiver Bandwidth RoHS Compliant available z z z z Application