ERIE Search Results

tc5000

Abstract: TC7400 TC4500 3D14A-P 3D16A-P
Contextual Info: CONTENTS FOREW ORD N U M E R IC A L IN D EX TC4000 S eries. 7 TC4500 S eries. 9

SL-750

Abstract: Tadiran SL-750 SL750
Contextual Info: Tadiran Ba eries GmbH Indus ries r. 22 63654 BÜDINGEN GERMANY Te . +49 0 6042/954-0 www. adiranba eries.de Keyword: iX ra - Long Term High Performance Performance Da a Size ½AA (Typica va ues for ba eries s ored a 25 °C for one year) Sys em Nomina vo age

2sk1464

Contextual Info: 2SK1464 2076 U H U ltra h ig h V o lta g e S eries V Ds s = 900V N Channel Power M O S F E T • f'3467 F e a tu re s • Low ON-state resistance. • Very high-speed switching. • Converters. A bso lu te M axim um R a tin g s at Ta = 25°C Drain to Source Voltage

RM1001

Abstract: SIDActor Data Book
Contextual Info: CATV eries SIDACtor SIDACtor Data Book CATV S eries SID A C tor The P1400AD SIDACtor is a 1000A rated solid state protection device offered in a T 0 -2 2 0 package and is designed to meet the severe surge requirements found in a CATV environment. Used in Hybrid Fiber Coax HFC applications, the P1400AD

BLC18

Abstract: 696XG-1059 D818HN-1107 BLC13H 696XG-1052 679YN-1033 BLC10 696XG BLC-16 BLC 187
Contextual Info: 111 TYPE rs 187 BLC S eries TYPE BLC eries Type BLC10 BLC13 BLC13H BLC16 BLC18 BLC216 5-12 5-12 5-14 5-12 3 -9 Output Open-Circuft Voltage M Vms 5-12 2500V (0-P) max. 800 max. 1200 max. 1100 max. 1800 max. 1500 max. Frequency (KHz) fH 20-90 20-90 20-90

2SK1725

Contextual Info: 2SK1725 LD L o w D rive S eries V DSs = 3 0 V 2 08 7 N Channel Power M OSFET Features •Low ON resistance. • Very high-speed switching. • Low-voltage drive. ■M eets radial taping. b s o lu te M ax im u m R a tin g s a t T a = 25°C D rain to Source Voltage

Contextual Info: 2SK1472 2083A LD L o w D rive S eries V Dss — 6 0 V 2092A N Channel Power M OS F ET F e a tu re s •Low ON resistance. • Very high-speed switching. • Low-voltage drive. A b so lu te M ax im u m R a tin g s a tT a = 25°C D rain to Source Voltage V dss

Contextual Info: 2SK1724 LD L o w D rive S eries 2062 V 0 ss —3 0 V N Channel Power M OSFET E.3BI9 F e a tu re s •Low ON resistance. • Very high-speed switching. • Low-voltage drive. A bsolute M axim um R atin g s at Ta = 25°C Drain to Source Voltage V d ss Gate to Source Voltage

Contextual Info: 2SJ226 LD L o w D rive S eries VDss = 3 0 V 2085 P Channel Power M OSFET •E -381 I F e a tu re s ■Low ON resistance. ■Very high-speed switching. ■Low-voltage drive. • Its height onboard is 9.5mm. ■Meets radial taping. A bsolute M axim um R atin g s at Ta = 25°C

AX8896

Contextual Info: 2SJ287 LD L o w D rive S eries V DSs = 3 0 V 2062 P Channel Power M OSFET F e a tu re s • Low ON resistance. • Very high-speed switching. • Low-voltage drive. A b so lu te M ax im u m R a tin g s a tT a = 2 5 °C D rain to Source Voltage VDSS Gate to Source Voltage

7842

Contextual Info: 2SK1727 LD L o w D rive S eries V D 2 08 7 60V N Channel Power M OSFET F e a tu re s •Low ON resistance. • V ery high-speed switching. • Low-voltage drive. ■M eets radial taping. A b so lu te M ax im u m R a tin g s a tT a = 25°C D rain to Source Voltage

2SK1904

Contextual Info: 2SK1904 LD L o w D rive S eries VDs s = 1 0 0 V 2063 N Channel Power M O SFET F e a tu re s • Low ON resistance. • Very high-speed switching. • Low-voltage drive. •M icaless package facilitatin g m ounting. A b so lu te M ax im u m R a tin g s a t T a = 25°C

E36J

Contextual Info: 2SK1731 LD L o w D rive S eries VDss = 30V 2085 N Channel Power M OSFET E'36J6 F e a tu re s • Low ON resistance. •Very high-speed switching. ■Low-voltage drive. ■Its height onboard is 9.5mm. - M eets radial taping. A b so lu te M ax im u m R a tin g s a t Ta = 25°C

2SJ195

Contextual Info: 2SJ195 2083a 2092 A LD L o w D rive S eries V DSS = 1 0 0 V P Channel Power M OSFET 1)3768 F eatures • Low ON resistance. • Very high-speed switching. • Low-voltage drive. A bsolute M axim um R atings at Ta = 25°C Drain to Source Voltage Vdss Gate to Source Voltage

d3s diode

Contextual Info: 2SK1906 LD L o w D rive S eries V D3S= 1 0 0 V 2063 N Channel Power M OSFET F e a tu re s • Low ON resistance. - Very high-speed switching. •Low-voltage drive. ■M icaless package facilitating mounting. A b s o lu te M ax im u m R a tin g s a t Ta = 25°C

2092A

Contextual Info: 20 83A LD L o w D rive S eries V Dss = 6 0 V 2092A P Channel Power M OSFET \E 3 7 6 4 A F e a tu re s •Low ON resistance ■Very high-speed switching • Low-voltage drive A bsolute M axim um R atin g s at Ta = 25°C D rain to Source Voltage V d ss Gate to Source Voltage

Contextual Info: 2SJ232 LD L o w D rive S eries V DSs = 1 0 0 V 2085 P Channel Power M O SFET £.1381 7 F e a tu re s • Low ON resistance. • Very high-speed switching. • Low-voltage drive. •Its height onboard is 9.5mm. ■M eets radial taping. A b so lu te M ax im u m R a tin g s a t Ta = 25°C

Contextual Info: 2SJ230 2085 LD L o w D rive S eries V Dss = 6 0 V P Channel Power M OSFET F e a tu re s • Low ON resistance. • Very high-speed switching. • Low-voltage drive. • Its height onboard is 9.5mm. • M eets radial taping. tisolute M ax im u m R a tin g s a t Ta = 25°C

8897

Contextual Info: 2SJ288 2062 LD L o w D rive S eries VDs s = 6 0 V P Channel Power M OSFET 4308 F e a tu re s •Low ON resistance. • Very high-speed switching. - Low-voltage drive. A b so lu te M ax im u m R a tin g s a t Ta = 25°C D rain to Source Voltage Vdss G ate to Source Voltage

q6000a

Abstract: 5502 power switching 74 series logic gate amcc, qc binary counters with D-flip flop MSI IC decoder synchronous counter using flip flip pga 180
Contextual Info: c Q >y 000975 D E V IC E SPECIFIC APPLIED MICRO CIRCUITS CORPORATION f f t m c Q6000A ERIES CMOS LOGIC ARRAYS FEATURES TECHNOLOGY Q 60 00A S eries arrays feature 1.8-m icron silico n -g a te CM O S with tw o-level m etalization, o fferin g high p e rfo rm a n ce and up to

LN273RPH

Abstract: LN373GPH LN473YPH LN873RPH S500
Contextual Info: m ñ □ Square Type 5.0 m m X ö .O m m T y p e No. S eries Unit: mm 5.0 + 0.2 5 .0 ± 0 .2 i L ig h tin g C olo r L N 2 7 3 R P H .R ed L N 3 7 3 G P H . G re e n L N 4 7 3 Y P H . A m b e r L N 8 7 3 R P H . O ra n g e

LN230RPP

Abstract: LN330GPP LN430YPP LN830RPP U2002
Contextual Info: a a m S eries 0 2.0mm T y p e No. Round—Top View Type L ig h tin g C o lo r L N 2 3 0 R P P .Red L N 3 3 0 G P P .G re e n LN 4 3 0 Y P P . A m b e r L N 8 3 0 R P P .O ra n g e Absolute Maximum Ratings T a = 2 5 °C

417 knob rotary

Contextual Info: S eries 417 Rotary knob sw itches Type 420 Basic design: 12 positions, nominal width 19,4 mm, steel spindle 3 mm Electrical Specification Mechanical Specification S w itch resistance initial value after 15 000 cycles Insulation resistance Test voltage Sw itching voltage

Contextual Info: S eries 714 W irew ound single turn precision potentiom eters Type 714 S Basic design: encased, nominal width 18 mm wire tag terminations, ball wiper Electrical Specification Mechanical Specification R ated re s is ta n c e range: L aw re s is ta n c e ta p e r :