AX8896 Search Results

AX8896

Contextual Info: 2SJ287 LD L o w D rive S eries V DSs = 3 0 V 2062 P Channel Power M OSFET F e a tu re s • Low ON resistance. • Very high-speed switching. • Low-voltage drive. A b so lu te M ax im u m R a tin g s a tT a = 2 5 °C D rain to Source Voltage VDSS Gate to Source Voltage

EN4307

Abstract: 2SJ287
Contextual Info: Ordering number:EN4307 P-Channel Silicon MOSFET 2SJ287 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. unit:mm 2062A [2SJ287] 4.5 1.6 2.5 1.0 0.4 0.5 3 1.5 2 4.25max

2062a

Abstract: 2SJ287 ITR00374 ITR00375 ITR00376 ITR00377 ITR00388 ITR00389
Contextual Info: 注文コード No.N 4 3 0 7 A 2SJ287 No. 4 3 0 7 A 61599 半導体ニューズ No.4307 とさしかえてください。 2SJ287 特長 P チャネル MOS 形シリコン電界効果トランジスタ 超高速スイッチング用 ・低オン抵抗。 ・超高速スイッチング。

Contextual Info: Ordering number:EN4307 P-Channel Silicon MOSFET 2SJ287 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. unit:mm 2062A [2SJ287] 4.5 1.6 2.5 1.0 0.4 0.5 3 1.5 2 4.25max

2SJ287

Abstract: J600C
Contextual Info: Ordering number: EN 4307 No.4307 _ 2SJ287 P-Channel MOS Silicon FET Very High-Speed Switching Applications I Features • Low ON resistance. •Very high-speed switching. • Low-voltage drive. Absolute Maximum Ratings at Ta = 25°C Drain to Source Voltage