1G50 Search Results

lmg5040

Abstract: lmg5040xufc 1G5042XUFC
Contextual Info: HITACHI/iOPTOELECTRONICS blE J> 44^205 D 0 1 2 b 02 3 T7 « H I T M Hi L' 1G5042XUFC LMG5040XUFC) T 'V Z '3 9 LMG5040XUFC — Built in DF signal generation pin 7 Not Connected FEATURES • ■ ■ ■ ■ OPTICAL DATA 640(W )x 480(H) dot CFL backlit type

Contextual Info: C orporate Hom e | Electronic Components | Se gm e nts | W ho W e Are My Account Searc h Products Documentation Resources My Account Customer Support Home > Products > By Type > Socket/C ard Products > Product Feature Selector > Product Details 8058-1G50 Product Details

Contextual Info: My Account C hange Tyco Electronics Se arch by Ke yword or Part # Products Documentation Resources My Account Customer Support Home > Products > By Type > Socket/C ard Products > Product Feature Selector > Product Details 8058-1G50 Product Details Live Product Chat

dynamic ram binary cell

Abstract: QBA-1 qab1
Contextual Info: VIS Preliminary VG36643241AT CMOS Synchronous Dynamic RAM Description The device is CMOS Synchronous Dynamic RAM organized as 524,288 words x 32 bits x 4 banks. it is fabricated with an advanced submicron CMOS technology and designed to operate from a singly 3.3V only

CI 576

Contextual Info: VG26 V 18165C 1,048,576 x 16 - Bit CMOS Dynamic RAM VIS Description The device CMOS Dynamic RAM organized as 1,048,576 words x 16 bits with extended data out access mode. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single 5V only or 3.3V only

dba1

Abstract: VG3617161ET
Contextual Info: VG3617161ET 1,048,576 x 16 - Bit CMOS Synchronous Dynamic RAM VIS Description The VG3617161ET is CMOS Synchronous Dynamic RAM organized as 524,288-word X 16-bit X 2-bank. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single 3.3V

VG36648041DT

Abstract: VS1664648041D VS864648041D
Contextual Info: VS864648041D,VS1664648041D 8M,16MX64-Bit SDRAM Module VIS Description The VS864648041D and VS1664648041D are 8M x 64 bit and 16M bit x 64 Dual-In-Line synchronous DRAM Module DIMM . It consists of 8/16 CMOS 8Mx8 bit synchronous DRAMs (VG36648041DT) with 4

TL431I

Abstract: 1G43
Contextual Info: Precision Adjustable Shunt Reference CORPORATION TL431I FEATURES • • • • • • • DESCRIPTION Trimmed 1% Bandgap Reference Nominal Temperature Range Extended to 105oC Temperature-Compensated: 30ppm/ oC Internal Amplifier with 150mA Capability Low Output Noise

5555 FAIRCHILD optocoupler

Abstract: MC74HC374N 74hc14n equivalent NC7S125M5 14069 HCF4541BEY APPLICATION HCF4013BE 4026 fairchild datasheet 14543 motorola Motorola DM74LS139N
Contextual Info: R E L I A B L E . L O G I C . I N N O V A T I O N . Logic Cross-Reference Logic Cross-Reference 2003 Texas Instruments Printed in the U.S.A. by Texoma Business Forms, Durant, Oklahoma Printed on recycled paper. SCYB017A NEW First Revision Logic Cross-Reference

Contextual Info: VG26 V (S)17405 4,194,304 x 4 - Bit CMOS Dynamic RAM VIS Description The device CMOS Dynamic RAM organized as 4,194,304 words x 4 bits with extended data out access mode. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single

VM83

Abstract: VG2617405C VM83217405
Contextual Info: VM 43217405C, VM83 217405C 4M ,8M x 32-Bit Dynamic RAM Module_ v/,SH Description T h e V M 4 3 2 1 7 4 0 5 C and V M 8 3 2 1 7 4 0 5 C are 4M x 32-bit and 8M x 32-bit dynamic RAM modules. It is mounted by 8/1 6 pieces of 4M x 4 DR AM V G 2617405C , and each in a standard

CAC10

Contextual Info: VG26V4265BJ 262,144 x 16-Bit CMOS Dynamic RAM Preliminary VISJffi Description The device is CMOS Dynam ic RAM organized as 262,144 words x 16 bits with extended data out access mode. It is fabricated with an advanced submicron CMOS technology and advanced C M OS circuit design technologies, it is packaged in JEDEC standard 40-pin plastic

VG46VS8325

Abstract: ic 3645 sh xaxs
Contextual Info: VG46VS8325 131,072 x 32 x 2-Bit CM O S Synchronous Graphic RA M Preliminary Pin Assignment Top View Features • Fast access time from clock: 8/1Ons • Fast clock rate: 100/83MHz • Fully synchronous operation • Internal pipelined architecture • Dual internal banks(128K x 32-bit x 2-bank)

Contextual Info: VIS VG26 V (S)17405 4,194,304x4-B it CMOS Dynamic RAM D escription The device C M O S D ynam ic RAM organized as 4 ,1 9 4 ,3 0 4 w ords x 4 bits w ith extended d ata out access m ode. It is fabricated w ith an advanced subm icron C M O S te ch n o lo g y and designed to operate from a single

Contextual Info: VG 26 V (S)18160B 1,048,576 x 16-Bit CMOS Dynamic RAM VIS H Description The device is CMOS Dynamic RAM organized as 1,048,576 words x 16 bits. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single 5V only or 3.3V only power supply. Low voltage operation is more suitable to be used

dynamic ram binary cell

Contextual Info: VIS Preliminary VG3664321 4 1(2)BT CMOS Synchronous Dynamic RAM Description The device is CMOS Synchronous Dynamic RAM organized as 524,288 - word x 32 - bit x 4 bank, and 1,048,576 - word x 32 - bit x 2 - bank, respectively. lt is fabricated with an advanced

dba1

Abstract: VG3617161ET RR111
Contextual Info: VG3617161ET 1,048,576 x 16 - Bit CMOS Synchronous Dynamic RAM VIS Description The VG3617161ET is CMOS Synchronous Dynamic RAM organized as 524,288-word X 16-bit X 2-bank. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single 3.3V

VG36641641

Abstract: VG36641641BT
Contextual Info: VIS Preliminary VG36641641BT CMOS Synchronous Dynamic RAM Description The device is CMOS Synchronous Dynamic RAM organized as 1,048,576 - word x 16-bit x 4-bank. it is fabricated with an advanced submicron CMOS technology and designed to operate from a singly 3.3V only

sub-micro CMOS technology

Contextual Info: VG26 V S4260D 262,144 x 16 - Bit CMOS Dynamic RAM VIS Description The device is CMOS Dynamic RAM organized as 262, 144-word x 16 bits. It is fabricated with an advanced submicro CMOS technology and advanced CMOS circuit design technologies. Fast Page Mode allows 512 random

Contextual Info: VG26 V (S)18165C/VG26(V)(S)18165D 1,048,576 x 16 - Bit CMOS Dynamic RAM VIS Description The device CMOS Dynamic RAM organized as 1,048,576 words x 16 bits with extended data out access mode. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single 5V only or 3.3V only

MAS 10 RCD

Contextual Info: VIS VG26 V (S)17405 4,194,304 x 4 - Bit CMOS Dynamic RAM Description The device CMOS Dynamic RAM organized as 4,194,304 words x 4 bits with extended data out access mode. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single

tras 36ns

Contextual Info: VIS Preliminary VG468321C 131,072X32X2 - Bit CMOS Synchronous Graphic RAM Overview The VG468321C SGRAM is a high-speed CMOS synchronous graphics RAM containing 8M bits. It is internally configured as a dual 128K x 32 DRAM with a synchronous interface all signals are registered on

Contextual Info: VIS VG36128401BT / VG36128801BT / VG36128161BT CMOS Synchronous Dynamic RAM Description The VG36128401B, VG36128801B and VG3664128161B are high-speed 134,217,728-bit synchronous dynamic random-access memories, organized as 8,388,608 x 4 x 4, 4,194,304 x 8 x 4 and 2,097,152 x

Contextual Info: VIS VG26 V (S)18165C 1,048,576 x 16 - Bit CMOS Dynamic RAM Description The device CMOS Dynamic RAM organized as 1,048,576 words x 16 bits with extended data out access mode. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single 5V only or 3.3V only