1E5 MARKING Search Results

Contextual Info: 1E1 thru 1E5 Fast Recovery ectifiers Reverse Voltage 50 to 600V Forward Current 1.0A Feature & Dimensions * Plastic package has Underwriters Laboratory * * * * * * * * Flammability Classification 94V-0 High temperature metallurgically bonded construction Diffused junction

MIL-PRF-385353

Abstract: 1E6 MARKING 1E5 MARKING
Contextual Info: 3,0 Ordering Information Rad-Hard MSI - 14-LEAD PACKAGES: MILITARY TEMPERATURE RANGE, CLASS Q, & CLASS V UT54 * * - * * * * Total Dose: H = 1E6 rads(Si) (R) = 1E5 rads(Si) ( ) = Total dose characteristics neither tested nor guaranteed Lead Finish:1 (A) = Hot solder dipped

Contextual Info: Contents Panels & Adaptors Page 82 Ventilated Panels Page 84 Doors & Chassis - Panel Mount Page 86 Shelves & Slides Page 87 Keyboard Shelves Page 92 Drawers Page 93 80 Hammond Manufacturing Co. Ltd. 394 Edinburgh Rd. North Guelph, Ontario N1H 1E5 CANADA

BAT54CWT1G

Abstract: BAT54SWT1G
Contextual Info: BAT54SWT1G/BAT54CWT1G Schottky Diodes Connection Diagram BAT54SWT1G 3 BAT54CWT1G 3 1 2 3 2 1 MARKING SOT-323 2 1 BAT54SWT1G = YB BAT54CWT1G = YC Absolute Maximum Ratings * Symbol Ta = 25°C unless otherwise noted Parameter Value Unit VRRM Maximum Repetitive Reverse Voltage

Contextual Info: BAT54SWT1G/BAT54CWT1G Schottky Diodes Connection Diagram BAT54SWT1G 3 BAT54CWT1G 3 1 2 3 2 1 2 1 MARKING SOT-323 BAT54SWT1G = YB BAT54CWT1G = YC Absolute Maximum Ratings * Symbol Ta = 25°C unless otherwise noted Parameter Value Unit VRRM Maximum Repetitive Reverse Voltage

n312ad

Contextual Info: PWM Optimized ISL9N312AD3ST/ ISL9N312AD3 N-Channel Logic Level UltraFET Trench Power MOSFETs 30V, 50A, 12mΩ General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance.

Contextual Info: FQB95N03L N-Channel Logic Level PWM Optimized Power MOSFET General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. • Fast switching Optimized for switching applications, this device improves

35KP

Abstract: FQB95N03L
Contextual Info: FQB95N03L N-Channel Logic Level PWM Optimized Power MOSFET General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. • Fast switching Optimized for switching applications, this device improves

n312ad

Abstract: TO-252AA Package N312A
Contextual Info: ISL9N312AD3ST N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. • Fast switching

n312ad

Abstract: ISL9N312AD3ST 25E5 tube ISL9N312AD3 11A ABS
Contextual Info: ISL9N312AD3 / ISL9N312AD3ST N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. • Fast switching

N307AD

Abstract: ISL9N307AD3ST
Contextual Info: ISL9N307AD3ST N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. • Fast switching

Contextual Info: KSM038AN06A0 / KSMI038AN06A0 TO-220AB Features TO-262AB D = 80A • r DS ON = 3.5mΩ (Typ.), V GS = 10V, I • Qg(tot) = 95nC (Typ.), VGS = 10V • Low Miller Charge • Low QRR Body Diode • UIS Capability (Single Pulse and Repetitive Pulse) • Qualified to AEC Q101

N-308A

Abstract: TO-252 MOSFET
Contextual Info: PWM Optimized ISL9N308AD3ST N-Channel Logic Level UltraFET Trench MOSFET 30V, 50A, 8mΩ General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. • Fast switching

Contextual Info: FQB95N03L N-Channel Logic Level MOSFETs 30V, 75A, 0.008Ω General Description Features This device employs advanced MOSFET technology and features low gate charge while maintaining low onresistance. • Fast switching Optimized for switching applications, this device improves

67E-3

Abstract: FDI038AN06A0 FDP038AN06A0
Contextual Info: FDP038AN06A0 / FDI038AN06A0 N-Channel PowerTrench MOSFET 60V, 80A, 3.8mΩ Features Applications • r DS ON = 3.5mΩ (Typ.), V GS = 10V, ID = 80A • Motor / Body Load Control • Qg(tot) = 95nC (Typ.), VGS = 10V • ABS Systems • Low Miller Charge

2511NZ

Abstract: FDW2511NZ dual mosfet tt 6 pin Diode N7 S2 2511N 6 pin diode n10
Contextual Info: FDW2511NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET Features ! 7.1A, 20V General Description rDS ON =0.020Ω, VGS = 4.5V This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance

IRF640N

Abstract: 11A ABS IRF640N FAIRCHILD MOSFET 640N 640N irf640n datasheet N-Channel MOSFET 200v IRF-640N
Contextual Info: IRF640N N-Channel Power MOSFETs 200V, 18A, 0.15Ω Features • Peak Current vs Pulse Width Curve • Ultra Low On-Resistance - rDS ON = 0.102Ω (Typ), VGS = 10V • UIS Rateing Curve • Simulation Models - Temperature Compensated PSPICE and SABER Electrical Models

N308AP

Abstract: 35KP ISL9N308AP3 ISL9N308AS3ST
Contextual Info: PWM Optimized ISL9N308AP3/ISL9N308AS3ST N-Channel Logic Level UltraFET Trench MOSFETs 30V, 75A, 8mΩ General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance.

ISL9N307AP3

Abstract: ISL9N307AS3ST N307AS
Contextual Info: ISL9N307AP3/ISL9N307AS3ST N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. • Fast switching

M043 Diode

Abstract: FDD26AN06A0 m043 FDD26AN
Contextual Info: FDD26AN06A0 N-Channel PowerTrench MOSFET 60V, 36A, 26mΩ Features Applications • rDS ON = 20mΩ (Typ.), VGS = 10V, ID = 36A • Motor / Body Load Control • Qg(tot) = 13nC (Typ.), VGS = 10V • ABS Systems • Low Miller Charge • Powertrain Management

n307ad

Abstract: N-307 TO-252 MOSFET
Contextual Info: ISL9N307AD3ST N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. • Fast switching

N307AS

Abstract: ISL9N307AP3 ISL9N307AS3ST
Contextual Info: ISL9N307AP3/ISL9N307AS3ST N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. • Fast switching

FQP45N03LT

Abstract: FQP45N03L
Contextual Info: FQP45N03L N-Channel Logic Level MOSFETs 30V, 39A, 0.021Ω General Description Features This device employs advanced MOSFET technology and features low gate charge while maintaining low onresistance. • Fast switching Optimized for switching applications, this device improves

n312ad

Abstract: 69E-10
Contextual Info: ISL9N312AD3ST N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. • Fast switching