2511NZ Search Results
2511NZ Price and Stock
onsemi FDW2511NZMOSFET 2N-CH 20V 7.1A 8TSSOP |
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FDW2511NZ | Reel |
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Rochester Electronics LLC FDW2511NZMOSFET 2N-CH 20V 7.1A 8TSSOP |
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FDW2511NZ | Bulk | 683 |
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Fairchild Semiconductor Corporation FDW2511NZPower Field-Effect Transistor, 7.1A I(D), 20V, 0.02ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
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FDW2511NZ | 346,513 | 1 |
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2511NZ Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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2511NZ
Abstract: FDW2511NZ dual mosfet tt 6 pin Diode N7 S2 2511N 6 pin diode n10
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FDW2511NZ FDW2511NZ 2511NZ dual mosfet tt 6 pin Diode N7 S2 2511N 6 pin diode n10 | |
2511NZ
Abstract: m068 BV150 FDW2511NZ n10 diode 51E3 KP17 Diode N7 S2
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FDW2511NZ FDW2511NZ 2511NZ m068 BV150 n10 diode 51E3 KP17 Diode N7 S2 | |
Contextual Info: May 2008 2511NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET Features 7.1A, 20V tmM General Description rDS ON =0.020Ω, VGS = 4.5V This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance |
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FDW2511NZ FDW2511NZ | |
Contextual Info: 2511NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET Features ! 7.1A, 20V General Description rDS ON =0.020Ω, VGS = 4.5V This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance |
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FDW2511NZ FDW2511NZ | |
Contextual Info: 2511NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET Features ! 7.1A, 20V General Description rDS ON =0.020Ω, VGS = 4.5V This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance |
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FDW2511NZ FDW2511NZ |