N308AP Search Results

Contextual Info: PWM Optimized N308AP3/ISL9N308AS3ST N-Channel Logic Level UltraFET Trench MOSFETs 30V, 75A, 8mΩ General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance.

N308AP

Abstract: 35KP ISL9N308AP3 ISL9N308AS3ST
Contextual Info: PWM Optimized N308AP3/ISL9N308AS3ST N-Channel Logic Level UltraFET Trench MOSFETs 30V, 75A, 8mΩ General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance.

Contextual Info: N308AP3, ISL9N308AS3ST TM Data Sheet January 2001 File Number 30V, 0.008 Ohm, 75A, N-Channel Logic Level UltraFET Trench Power MOSFETs This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance.