1SV304 Search Results

1SV304

Contextual Info: T O SH IB A 1SV304 TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 S V3 0 4 VCO FOR VHF BAND RADIO U nit in mm • Sm all Package • High Capacitance Ratio : C i v / C 4 v = 3.0 Typ. • Low Series Resistance : rs = 0 .2 7 0 (Typ.) MAXIMUM RATINGS (Ta = 25°C)

marking TV

Abstract: 1SV304
Contextual Info: Diodes SMD Type Silicon Epitaxial Planar Diode 1SV304 SOD-323 +0.05 0.85-0.05 +0.1 1.3-0.1 +0.05 0.3-0.05 +0.1 1.7-0.1 Unit: mm Features High Capacitance Ratio:C1V/C4V=3.0 Typ. Low Series Resistance:rs=0.27 +0.1 2.6-0.1 1.0max (Typ.) 0.375 +0.05 0.1-0.02

1SV304

Contextual Info: 20010110 1SV304 SPICE PARAMETER SPICE MODEL: BERKLEY SPICE2G6 DIODE MODEL DATA FORMAT: MODEL FORMAT SPICE SYMBOL: IS A ,RS(Ω) ,N(-) ,CJ0(F) ,VJ(V) ,M(-) ,BV(V) ,IBV(A) ,XTI(-) FREQUENCY RANGE: f = 0.1 GHz～3 GHz REVERSE VOLTAGE RANGE: VR = 0.5V ～ 4 V

Contextual Info: Product specification 1SV304 SOD-323 +0.05 0.85-0.05 +0.1 1.3-0.1 +0.05 0.3-0.05 +0.1 1.7-0.1 Unit: mm Features High Capacitance Ratio:C1V/C4V=3.0 Typ. Low Series Resistance:rs=0.27 +0.1 2.6-0.1 1.0max (Typ.) 0.375 +0.05 0.1-0.02 0.475 Absolute Maxim um Ratings Ta = 25

1SV304

Contextual Info: 1SV304 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV304 VCO for VHF Band Radio • Unit: mm Small package • High capacitance ratio: C1 V/C4 V = 3.0 typ. • Low series resistance: rs = 0.27 Ω (typ.) Absolute Maximum Ratings (Ta = 25°C)

1SV304

Abstract: 971E MARKING L toshiba USC
Contextual Info: 1SV304 TOSHIBA TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1SV 304 Unit in mm VCO FOR VHF BAND RADIO • • • Small Package High Capacitance Ratio Low Series Resistance : C iy /C 4 Y = 3.0 Typ. : rs = 0.270 (Typ.) M A X IM U M RATINGS (Ta = 25°C)

Contextual Info: 1SV304 TOSHIBA TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE VCO FOR VHF BAND RADIO • • • Small Package High Capacitance Ratio Low Series Resistance MAXIMUM KAliNbb = CHARACTERISTIC Reverse Voltage Junction Temperature C i i * . _ _

1SV304

Contextual Info: 1SV304 TOSHIBA TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1SV304 Unit in mm VCO FOR VHF BAND RADIO • • • Small Package High Capacitance Ratio Low Series Resistance : C iy /C 4y = 3.0 Typ. : rs = 0.270 (Typ.) MAXIMUM RATINGS (Ta = 25°C)

Contextual Info: 1SV304 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV304 VCO for VHF Band Radio • Unit: mm Small package · High capacitance ratio: C1 V/C4 V = 3.0 typ. · Low series resistance: rs = 0.27 Ω (typ.) Maximum Ratings (Ta = 25°C) Characteristics

1SV304

Contextual Info: 1SV304 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV304 VCO for VHF Band Radio • Unit: mm Small package · High capacitance ratio: C1 V/C4 V = 3.0 typ. · Low series resistance: rs = 0.27 Ω (typ.) Maximum Ratings (Ta = 25°C) Characteristics

1SV304

Contextual Info: 1SV304 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV304 VCO for VHF Band Radio • Unit: mm Small package • High capacitance ratio: C1 V/C4 V = 3.0 typ. • Low series resistance: rs = 0.27 Ω (typ.) Absolute Maximum Ratings (Ta = 25°C)

1SV304

Contextual Info: 1SV304 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV304 VCO for VHF Band Radio • Unit: mm Small package • High capacitance ratio: C1 V/C4 V = 3.0 typ. • Low series resistance: rs = 0.27 Ω (typ.) Maximum Ratings (Ta = 25°C)

Contextual Info: 1SV304 TOSHIBA 1 SV3 0 4 TOSHIBA VARIABLE CAPACITANCE DIODE VCO FOR VHF BAND RADIO • • • Small Package High Capacitance Ratio Low Series Resistance SILICON EPITAXIAL PLANAR TYPE Unit in mm : C iy /C 4V = 3.0 Typ. : rs = 0.270 (Typ.) MAXIMUM RATINGS (Ta = 25°C)

Contextual Info: 1SV304 TO SH IBA TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1S V 304 VCO FOR VHF BAND RADIO • • • Small Package High Capacitance Ratio Low Series Resistance : C iv /C 4 v = 3.0 Typ. : rs = 0.270 (Typ.) MAXIMUM RATINGS (Ta = 25°C)

MARKING L toshiba USC

Abstract: 1SV304
Contextual Info: 1SV304 TO SH IBA TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1S V 304 VCO FOR VHF BAND RADIO • • • Small Package High Capacitance Ratio Low Series Resistance : C iv /C 4v = 3.0 Typ. : rs = 0.270 (Typ.) MAXIMUM RATINGS (Ta = 25°C)

SCJ0004N

Abstract: JDV2S71E DF2S6.8UFS 015AZ3.3 1ss421 CMG07 CMZ24 CRS06 DF2S5.6SC DF3S6.8ECT
Contextual Info: 東芝半導体製品総覧表 2009 年 7 月版 ダイオード 整流ダイオード 可変容量ダイオード 高周波スイッチ用ダイオード ツエナーダイオード スイッチングダイオード ショットキーバリアダイオード

Variable Capacitance Diodes

Abstract: 1SV283B 2fu smd transistor bidirectional zener diode 015DZ4 015AZ15 CRS06 smd diode Lz zener general purpose zener diode 256 CMZ24
Contextual Info: Diodes Rectifiers z 252 Variable Capacitance Diodes z 254 Radio-Frequency Switching Diodes z 255 Zener Diodes z 256 Switching Diodes z 262 Schottky Barrier Diodes z 265 Photodiodes z 270 251 Rectifiers General-Purpose Rectifiers Average Forward Current A

TA4029CTC

Abstract: TA4032FT TB7602TU MT4S300T MT4S300U MT4S301T TA4029TU SOT-24 MT4S300 RFM12U7X
Contextual Info: 製品カタログ 2011-1 東芝半導体 製品カタログ 高周波用半導体デバイス SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 アプリケーション別推奨製品 .3~8

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

RFM70U12D

Abstract: 2SC3136 rfm03u3ct 2SK709 RFM70U12 MT3S106 MT3S111 MT3S111P tim4450 tpm1919
Contextual Info: 東芝半導体製品総覧表 2009 年 7 月版 高周波デバイス 高周波バイポーラ小信号トランジスタ 高周波小信号 FET 高周波パワーMOSFET 高周波バイポーラパワートランジスタ 高周波ダイオード 小信号 MMIC 高周波セルパック

JDV2S31CT

Abstract: 1SV283B 1SV271 2SK1875 2sk3476 1SV128 1SV307 1SV308 DCS1800 IMT-2000
Contextual Info: 製品カタログ 2009-9 東芝半導体 製品カタログ 高周波用半導体デバイス SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / 高周波用半導体デバイス 当社半導体製品につきましては格別のお引き立てを賜わり誠にありがとうございます。

2sc5108

Abstract: toshiba transistors catalog 2sk3476 UHF/VHF IC transceiver 2SK403 microwave Duplexer Am tuning varicap Wideband MMIC VCO covers 8 GHz to 12.5 GHz 2Sk3656 microwave transceiver 3.54 GHz
Contextual Info: 2009-9 PRODUCT GUIDE Radio-Frequency Semiconductors SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng Radio-Frequency Semiconductor Devices Thank you for using Toshiba’s semiconductor devices. As you know, semiconductor products are widely used in both home and industrial applications. This catalog covers transistors,

3sk catalog

Abstract: TE85L Toshiba
Contextual Info: Semiconductor Catalog 2012-1 Radio-Frequency Semiconductors SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Recommended Products by Application . 3 to 7 1.1 Cell Phones 1.2 TV Tuners 1.3 Low-Power Radios FRS/GMRS

sec 2sc5088

Abstract: samsung UHF/VHF TV Tuner 2SC5066 datasheet RF Bipolar Transistor transistor 2SC5066 2SC5088 SEC MT6L04AE MT4S200T AU82 MT6L63FS
Contextual Info: 2007-9 PRODUCT GUIDE Radio-Frequency Semiconductors Radio-Frequency Semiconductor Devices Thank you for using Toshiba’s semiconductor devices. As you know, semiconductor products are widely used in both home and industrial applications. This catalog covers transistors, diodes and