19SEPTEMBER Search Results

Contextual Info: CMKD3003DO SURFACE MOUNT DUAL, ISOLATED, OPPOSING LOW LEAKAGE SILICON SWITCHING DIODES w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMKD3003DO contains two 2 Isolated Opposing Silicon Switching Diodes, manufactured by the epitaxial planar process,

CPD15

Abstract: mesa die
Contextual Info: PROCESS CPD15 Central Ultra Fast Rectifier TM Semiconductor Corp. 500mA Glass Passivated Rectifier Chip PROCESS DETAILS Process GLASS PASSIVATED MESA Die Size 25 x 25 MILS Die Thickness 9.5 MILS Anode Bonding Pad Area 14.5 x 14.5 MILS Top Side Metalization

1N5806

Abstract: UES1101 mesa die 1N5802 CMR3U-01 CPD17 UES1106
Contextual Info: PROCESS CPD17 Central Ultra Fast Rectifier TM Semiconductor Corp. 3 Amp Glass Passivated Rectifier Chip PROCESS DETAILS Process GLASS PASSIVATED MESA Die Size 87 x 87 MILS Die Thickness 12.2 MILS Anode Bonding Pad Area 69.5 x 69.5 MILS Top Side Metalization

1N5811

Abstract: 1N5807 CPD18 CUDD8-02 UES1301 UES1306 UES1401 UES1403
Contextual Info: PROCESS CPD18 Central Ultra Fast Rectifier TM Semiconductor Corp. 8 Amp Glass Passivated Rectifier Chip PROCESS DETAILS Process GLASS PASSIVATED MESA Die Size 98 x 98 MILS Die Thickness 12.2 MILS Anode Bonding Pad Area 82.5 x 82.5 MILS Top Side Metalization

MARKING R6 SOT-363

Contextual Info: CMKD4448 SURFACE MOUNT TRIPLE ISOLATED HIGH SPEED SILICON SWITCHING DIODES w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMKD4448 type contains three 3 Isolated High Speed Silicon Switching Diodes, manufactured by the epitaxial planar

Contextual Info: Package Details - SOD-882L Mechanical Drawing Lead Code: 1 Cathode 2) Anode Part Marking: One Character Alpha/Numeric Code Mounting Pad Geometry Dimensions in mm) Central TM Semiconductor Corp. w w w. c e n t r a l s e m i . c o m R0 (19-September 2007)

CMR1U-01

Abstract: CMR1U-01M CPD16 UES1001 UES1003 UF4007
Contextual Info: PROCESS CPD16 Central Ultra Fast Rectifier TM Semiconductor Corp. 1.0 Amp Glass Passivated Rectifier Chip PROCESS DETAILS Process GLASS PASSIVATED MESA Die Size 50 x 50 MILS Die Thickness 12.2 MILS Anode Bonding Pad Area 34 x 34 MILS Top Side Metalization

"Silicon Controlled Rectifiers" 35 amp

Contextual Info: CS39-4B CS39-4D CS39-4M CS39-4N SILICON CONTROLLED RECTIFIER 4 AMP, 200 THRU 800 VOLTS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CS39-4B series types are hermetically sealed silicon controlled rectifiers designed for sensing circuit applications and

c303 diode

Contextual Info: CMKD3003DO SURFACE MOUNT DUAL, ISOLATED, OPPOSING LOW LEAKAGE SILICON SWITCHING DIODES w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMKD3003DO contains two 2 Isolated Opposing Silicon Switching Diodes, manufactured by the epitaxial planar process,

bond wire gold

Contextual Info: Package Details - SOT-223C Mechanical Drawing Lead Code: Part Marking: Full Part Number. Reference individual device datasheet. Mounting Pad Geometry Dimensions in mm Central TM Semiconductor Corp. w w w. c e n t r a l s e m i . c o m R1 (5-November 2007)

transistor k87

Abstract: CMKT5078 CMKT5087 CMKT5088
Contextual Info: Central CMKT5078 CMKT5087 CMKT5088 TM Semiconductor Corp. ULTRAmini SURFACE MOUNT SILICON TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR CMKT5078 , CMKT5087, and CMKT5088, are Silicon transistors in an ULTRAmini™ surface mount package, designed for applications requiring high

C1R sot23

Contextual Info: Central CMPT5088 CMPT5089 TM Semiconductor Corp. SURFACE MOUNT NPN SILICON TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT5088, CMPT5089 types are NPN silicon transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package,

2N5248

Abstract: jfet to 92 jfet marking code JFET APPLICATIONS
Contextual Info: 2N5248 w w w. c e n t r a l s e m i . c o m N-CHANNEL SILICON JFET The CENTRAL SEMICONDUCTOR 2N5248 is an N-Channel silicon JFET designed for high frequency amplifier and oscillator applications. MARKING: FULL PART NUMBER TO-92 CASE MAXIMUM RATINGS: TA=25°C

Contextual Info: PROCESS CP331 Power Transistor NPN - High Voltage Darlington Transistor Chip PROCESS DETAILS Die Size 39.4 x 39.4 MILS Die Thickness 9.1 MILS Base Bonding Pad Area 7.9 x 7.9 MILS Emitter Bonding Pad Area 7.9 x 7.9 MILS Top Side Metalization Al-Si - 30,000Å

Contextual Info: Voltage Transducer LV 100-750/SP4 For the electronic measurement of voltages: DC, AC, pulsed., with galvanic isolation between the primary circuit and the secondary circuit. Electrical data Features Primary nominal voltage rms Primary voltage, measuring range

Contextual Info: Central CMHZ5221B THRU CMHZ5281B TM Semiconductor Corp. SURFACE MOUNT ZENER DIODE 2.4 VOLTS THRU 200 VOLTS 500mW, 5% TOLERANCE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMHZ5221B Series Silicon Zener Diode is a high quality voltage regulator, manufactured in a surface